TK100A10N1,S4X
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757-TK100A10N1S4X
TK100A10N1,S4X
Raž.:
Apraksts:
MOSFET MOSFET NCh 3.1ohm VGS10V10uAVDS100V
MOSFET MOSFET NCh 3.1ohm VGS10V10uAVDS100V
Datu lapa:
Ir noliktavā: 141
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Noliktavas krājumi:
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141 Var nosūtīt uzreizRadās negaidīta kļūda. Lūdzu, vēlāk mēģiniet vēlreiz.
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Izpildes laiks rūpnīcā:
-
20 Nedēļas Paredzamais rūpnīcas ražošanas laiks daudzumiem, kas ir lielāki par parādīto.
Cenu noteikšana (EUR)
| Daudz. | Vienības cena |
Kop. cena
|
|---|---|---|
| 4,82 € | 4,82 € | |
| 2,55 € | 25,50 € | |
| 2,37 € | 2 37,00 € | |
| 1,99 € | 9 95,00 € |
Datu lapa
Application Notes
- Impacts of the dv/dt Rate on MOSFETs
- Impacts of the dv/dt Rate on MOSFETs
- MOSFET Avalanche Ruggedness
- MOSFET Avalanche Ruggedness
- MOSFET Gate Driver Circuit
- MOSFET Gate Driver Circuit
- MOSFET Parallening (Parasitic Oscillation Between Parallel Power MOSFETs)
- MOSFET Parallening (Parasitic Oscillation Between Parallel Power MOSFETs)
- Parasitic Oscillation and Ringing of Power MOSFETs
- Parasitic Oscillation and Ringing of Power MOSFETs
- Power MOSFET Electrical Characteristics
- Power MOSFET Electrical Characteristics
- Power MOSFET Maximum Ratings
- Power MOSFET Maximum Ratings
- Power MOSFET Selecting MOSFETs and Consideration for Circuit Design
- Power MOSFET Selecting MOSFETs and Consideration for Circuit Design
- Power MOSFET Structure and Characteristics
- Power MOSFET Structure and Characteristics
- Power MOSFET Thermal Design and Attachment of a Thermal Fin
- Power MOSFET Thermal Design and Attachment of a Thermal Fin
Models
Product Catalogs
Test/Quality Data
- TARIC:
- 8541290000
- CNHTS:
- 8541290000
- CAHTS:
- 8541290000
- USHTS:
- 8541290065
- JPHTS:
- 8541290100
- KRHTS:
- 8541299000
- MXHTS:
- 85412999
- ECCN:
- EAR99
