OptiMOS™ 7 40V Automotive Power MOSFETs

Infineon Technologies OptiMOS™ 7 40V Automotive Power MOSFETs are high-current low RDS(on) MOSFETs with optimized switching behavior. These N-channel automotive MOSFETs offer high power density, low conduction losses, and high current density. The OptiMOS™ 7 MOSFETs come in a 3mm x 3mm advanced leadless package with Cu-Clip for low package Ron and minimum stray inductance. These MOSFETs are 100% avalanche tested and RoHS compliant. The OptiMOS™ 7 MOSFETs are ideal for applications such as power distribution, window-lift, power-seat, high-redundancy EPS, and body control modules.

Rezultāti: 14
Atlasīt Attēls Detaļas Nr.
 Raž.
Apraksts Datu lapa Pieejamība Cenas noteikšana (EUR) Atlasiet rezultātus tabulā pēc vienības cenas, pamatojoties uz daudzumu.
Daudz. RoHS ECAD modelis Tehnoloģija
Montāžas veids
Iepakojums / korpusa
Tranzistora polaritāte
Kanālu skaits
VDS - DS pārtraukuma spriegums
Id - nepārtraukta noplūdes strāva
RDS ieslēgts - noplūdes avota pretestība
VGS - kanāla-avota spriegums
VGS TH - kanāla-avota sliekšņa spriegums
Qg - kanāla lādiņš
Minimālā darba temperatūra
Maksimālā darba temperatūra
Pd - jaudas izkliede
Kanāla režīms
Tirdzniecības nosaukums
Iepakojums
Infineon Technologies MOSFET OptiMOS 7 power MOSFET for automotive applications
Datu lapa
560Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 5 000

Si SMD/SMT PG-THSOG-4-1 N-Channel 1 Channel 40 V 252 A 1.04 mOhms 20 V 3 V 59 nC - 55 C + 175 C 123 W Enhancement OptiMOS Reel, Cut Tape
Infineon Technologies MOSFET OptiMOS 7 Power-Transistor
Datu lapa
792Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 5 000

Si SMD/SMT PG-TDSON-8 N-Channel 1 Channel 40 V 154 A 1.9 mOhms 16 V 1.8 V 34 nC - 55 C + 175 C 83 W Enhancement OptiMOS Reel, Cut Tape
Infineon Technologies MOSFET OptiMOS 7 Power-Transistor
Datu lapa
780Ir noliktavā
5 000Paredzamais 16.02.2026
Min.: 1
Vair.: 1
Rullis: 5 000

Si SMD/SMT PG-TDSON-8 N-Channel 1 Channel 40 V 100 A 3.05 mOhms 16 V 1.8 V 18 nC - 55 C + 175 C 58 W Enhancement OptiMOS Reel, Cut Tape
Infineon Technologies MOSFET OptiMOS 7 Power-Transistor
Datu lapa
784Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 5 000

Si SMD/SMT PG-TDSON-8 N-Channel 1 Channel 40 V 97 A 3.25 mOhms 20 V 3 V 16 nC - 55 C + 175 C 58 W Enhancement OptiMOS Reel, Cut Tape
Infineon Technologies MOSFET 40 V, N-Ch, 2.34 m?, Automotive Power MOSFET, SSO8 HB (5x6), OptiMOS-7
Datu lapa
700Ir noliktavā
5 000Paredzamais 12.03.2026
Min.: 1
Vair.: 1
Rullis: 5 000

Si SMD/SMT PG-TDSON-8 N-Channel 2 Channel 40 V 132 A 2.34 mOhms 16 V 1.8 V 29 nC - 55 C + 175 C 75 W Enhancement OptiMOS Reel, Cut Tape
Infineon Technologies MOSFET 40 V, N-Ch, 2.56 m?, Automotive Power MOSFET, SSO8 HB (5x6), OptiMOS-7
Datu lapa
700Ir noliktavā
5 000Paredzamais 19.03.2026
Min.: 1
Vair.: 1
Rullis: 5 000

Si SMD/SMT PG-TDSON-8 N-Channel 2 Channel 40 V 127 A 2.56 mOhms 16 V 1.8 V 29 nC - 55 C + 175 C 75 W Enhancement OptiMOS Reel, Cut Tape
Infineon Technologies MOSFET 40 V, N-Ch, 3.78 m?, Automotive Power MOSFET, SSO8 HB (5x6), OptiMOS-7
Datu lapa
693Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 5 000

Si SMD/SMT PG-TDSON-8 N-Channel 2 Channel 40 V 84 A 3.78 mOhms 16 V 1.8 V 15 nC - 55 C + 175 C 50 W Enhancement OptiMOS Reel, Cut Tape
Infineon Technologies MOSFET 40 V, N-Ch, 2.46 m?, Automotive Power MOSFET, SSO8 HB (5x6), OptiMOS-7
Datu lapa
264Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 5 000

Si SMD/SMT PG-TDSON-8 N-Channel 2 Channel 40 V 129 A 2.46 mOhms 20 V 3 V 25 nC - 55 C + 175 C 75 W Enhancement OptiMOS Reel, Cut Tape
Infineon Technologies MOSFET OptiMOS 7 Power-Transistor
Datu lapa
768Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 5 000

Si SMD/SMT PG-TDSON-8 N-Channel 2 Channel 40 V 82 A 4.01 mOhms 20 V 3 V 13 nC - 55 C + 175 C 52 W Enhancement OptiMOS Reel, Cut Tape
Infineon Technologies MOSFET OptiMOS 7 Power-Transistor
Datu lapa
216Ir noliktavā
5 000Paredzamais 28.05.2026
Min.: 1
Vair.: 1
Rullis: 5 000

Si SMD/SMT PG-TDSON-8 N-Channel 1 Channel 40 V 199 A 1.25 mOhms 16 V 1.8 V 42 nC - 55 C + 175 C 94 W Enhancement OptiMOS Reel, Cut Tape
Infineon Technologies MOSFET OptiMOS 7 Power-Transistor
Datu lapa
344Ir noliktavā
5 000Paredzamais 16.02.2026
Min.: 1
Vair.: 1
Rullis: 5 000

Si SMD/SMT PG-TDSON-8 N-Channel 1 Channel 40 V 117 A 2.56 mOhms 16 V 1.8 V 23 nC - 55 C + 175 C 65 W Enhancement OptiMOS Reel, Cut Tape
Infineon Technologies MOSFET OptiMOS 7 Power-Transistor
Datu lapa
232Ir noliktavā
5 000Paredzamais 05.11.2026
Min.: 1
Vair.: 1
Rullis: 5 000

Si SMD/SMT PG-TDSON-8 N-Channel 2 Channel 40 V 65 A 5.04 mOhms 20 V 1.8 V 11 nC - 55 C + 175 C 40 W Enhancement OptiMOS Reel, Cut Tape
Infineon Technologies MOSFET OptiMOS 7 Power-Transistor
Datu lapa
43Ir noliktavā
5 000Paredzamais 16.07.2026
Min.: 1
Vair.: 1
Rullis: 5 000

Si SMD/SMT PG-TDSON-8 N-Channel 2 Channel 40 V 62 A 5.41 mOhms 20 V 3 V 9 nC - 55 C + 175 C 40 W Enhancement OptiMOS Reel, Cut Tape
Infineon Technologies MOSFET OptiMOS 7 Power-Transistor
Datu lapa
10 000Pēc pasūtījuma
Min.: 1
Vair.: 1
Rullis: 2 000

Si SMD/SMT PG-LHDSO-10-3 N-Channel 1 Channel 40 V 425 A 770 uOhms 20 V 3 V 112 nC - 55 C + 175 C 205 W Enhancement OptiMOS Reel, Cut Tape