STM 650V M Series Trench Gate Field-Stop IGBTs

STMicroelectronics 650V M Series Trench Gate Field-Stop IGBTs are developed using an advanced proprietary trench gate field-stop structure. STMicroelectronics 650V M series supply a 3A-150A maximum collector current for applications with up to 100kHz operating frequency. The IGBTs have an optimized design and are available in a tailored built-in anti-parallel diode. A positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.

Rezultāti: 17
Atlasīt Attēls Detaļas Nr.
 Raž.
Apraksts Datu lapa Pieejamība Cenas noteikšana (EUR) Atlasiet rezultātus tabulā pēc vienības cenas, pamatojoties uz daudzumu.
Daudz. RoHS ECAD modelis Tehnoloģija
Iepakojums / korpusa
Montāžas veids
Konfigurācija
Kolektors - starotāja spriegums, VCEO maks.
Kolektora-starotāja piesātinājuma spriegums
Maksimālais kanāla starotāja spriegums
Nepārtraukta kolektora strāva pie 25 C
Pd - jaudas izkliede
Minimālā darba temperatūra
Maksimālā darba temperatūra
Sērija
Iepakojums

STMicroelectronics IGBT Trench gate field-stop IGBT, M series 650 V, 6 A low loss
Datu lapa
3 710Ir noliktavā
MouseReel ir pieejams
Min.: 1
Vair.: 1
Rullis: 2 500

Si DPAK-3 (TO-252-3) SMD/SMT Single 650 V 1.55 V - 20 V, 20 V 12 A 88 W - 55 C + 175 C STGD6M65DF2 Reel, Cut Tape, MouseReel

STMicroelectronics IGBT Trench gate field-stop IGBT, M series 650 V, 4 A low loss
Datu lapa
2 128Ir noliktavā
MouseReel ir pieejams
Min.: 1
Vair.: 1
Rullis: 2 500

Si DPAK-3 (TO-252-3) SMD/SMT Single 650 V 1.6 V - 20 V, 20 V 8 A 68 W - 55 C + 175 C STGD4M65DF2 Reel, Cut Tape, MouseReel
STMicroelectronics IGBT Trench gate field-stop IGBT, M series 650 V, 120 A low loss
Datu lapa
380Ir noliktavā
Min.: 1
Vair.: 1

Si Max247-3 Through Hole Single 650 V 1.65 V - 20 V, 20 V 160 A 625 W - 55 C + 175 C STGYA120M65DF2 Tube
STMicroelectronics IGBT Trench gate field-stop 650 V, 15 A low-loss M series IGBT in a D2PAK package
Datu lapa
1 457Ir noliktavā
MouseReel ir pieejams
Min.: 1
Vair.: 1
Rullis: 1 000

Si D2PAK-3 SMD/SMT Single 650 V 1.55 V - 20 V, 20 V 30 A 136 W - 55 C + 175 C STGB15M65DF2 Reel, Cut Tape, MouseReel
STMicroelectronics IGBT Trench gate field-stop IGBT M series, 650 V 30 A low loss
Datu lapa
980Ir noliktavā
Min.: 1
Vair.: 1

Si Through Hole Single 650 V 1.55 V - 20 V, 20 V 60 A 258 W - 55 C + 175 C STGP30M65DF2 Tube
STMicroelectronics IGBT Automotive-grade trench gate field-stop 650 V, 50 A low-loss M series IGBT
Datu lapa
54Ir noliktavā
Min.: 1
Vair.: 1

- 20 V, 20 V HB2 Tube

STMicroelectronics IGBT Trench gate field-stop IGBT M series, 650 V 30 A low loss
Datu lapa
1 470Ir noliktavā
MouseReel ir pieejams
Min.: 1
Vair.: 1
Rullis: 1 000

Si SMD/SMT Single 650 V 1.55 V - 20 V, 20 V 60 A 258 W - 55 C + 175 C STGB30M65DF2 Reel, Cut Tape, MouseReel

STMicroelectronics IGBT Trench gate field-stop IGBT M series, 650 V 75 A low loss
Datu lapa
675Ir noliktavā
Min.: 1
Vair.: 1

Si TO-247-3 Through Hole Single 650 V 1.65 V - 20 V, 20 V 120 A 468 W - 55 C + 175 C STGW75M65DF2 Tube

STMicroelectronics IGBT Trench gate field-stop 650 V, 50 A low-loss M series IGBT in a TO-247 long leads
Datu lapa
692Ir noliktavā
Min.: 1
Vair.: 1

Si TO-247-3 Through Hole Single 650 V 1.65 V - 20 V, 20 V 80 A 375 W - 55 C + 175 C HB2 Tube
STMicroelectronics IGBT Trench gate field-stop IGBT M series, 650 V 15 A low loss
Datu lapa
130Ir noliktavā
Min.: 1
Vair.: 1

Si TO-220FP-3 Through Hole Single 650 V 1.55 V - 20 V, 20 V 30 A 31 W - 55 C + 175 C STGF15M65DF2 Tube
STMicroelectronics IGBT Trench gate field-stop IGBT M series, 650 V 30 A low loss
Datu lapa
1 131Ir noliktavā
Min.: 1
Vair.: 1

Si TO-220FP-3 Through Hole Single 650 V 1.55 V - 20 V, 20 V 60 A 38 W - 55 C + 175 C STGF30M65DF2 Tube
STMicroelectronics IGBT Trench gate field-stop IGBT M series, 650 V 10 A low loss
Datu lapa
427Ir noliktavā
2 000Paredzamais 09.11.2026
Min.: 1
Vair.: 1

Si STGP10M65DF2 Tube

STMicroelectronics IGBT Trench gate field-stop IGBT, M series 1200 V, 8 A low loss
Datu lapa
344Ir noliktavā
Min.: 1
Vair.: 1

Si TO-247-3 Through Hole Single 1.2 kV 1.85 V - 20 V, 20 V 16 A 167 W - 55 C + 175 C M Tube

STMicroelectronics IGBT Trench gate field-stop IGBT M series, 650 V 75 A low loss
Datu lapa
396Paredzamais 03.04.2026
Min.: 1
Vair.: 1

Si TO-247-3 Through Hole Single 650 V 1.65 V - 20 V, 20 V 120 A 488 W - 55 C + 175 C STGWA75M65DF2 Tube

STMicroelectronics IGBT Trench gate field-stop 650 V, 10 A low-loss M series IGBT in a D2PAK package
Datu lapa
Noliktavā neesošas preces izpildes laiks 15 Nedēļas
Min.: 1 000
Vair.: 1 000
Rullis: 1 000

Si STGB10M65DF2 Reel

STMicroelectronics IGBT Trench gate field-stop IGBT, M series 650 V, 4 A low loss
Datu lapa
Noliktavā neesošas preces izpildes laiks 15 Nedēļas
Min.: 2 000
Vair.: 1 000
Rullis: 1 000

Si D2PAK-3 SMD/SMT Single 650 V 1.6 V - 20 V, 20 V 8 A 68 W - 55 C + 175 C STGB4M65DF2 Reel
STMicroelectronics IGBT Trench gate field-stop IGBT M series, 650 V 6 A low loss
Datu lapa
Noliktavā neesošas preces izpildes laiks 15 Nedēļas
Min.: 1
Vair.: 1

Si TO-220-3 Through Hole Single 650 V 1.55 V - 20 V, 20 V 12 A 88 W - 55 C + 175 C STGP6M65DF2 Tube