Silicon Carbide (SiC) MOSFETs

APC-E Silicon Carbide (SiC) MOSFETs are designed to deliver high power, high frequency, and unmatched performance for demanding applications. These MOSFETs are available in 650V and 1200V variants and feature a low forward voltage drop, high switching speeds, and robust reliability, making the MOSFETs ideal for industrial power supplies, energy storage, motor driving, data centers, server farms, and electric vehicle (EV) charging. These APC-E SiC MOSFETs are engineered to improve energy efficiency, reduce system size and weight, and enable modern system architectures. The devices are paired with custom-designed gate drivers to ensure optimal performance and reliability.

Rezultāti: 20
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 Raž.
Apraksts Datu lapa Pieejamība Cenas noteikšana (EUR) Atlasiet rezultātus tabulā pēc vienības cenas, pamatojoties uz daudzumu.
Daudz. RoHS ECAD modelis Montāžas veids
Iepakojums / korpusa
Tranzistora polaritāte
Kanālu skaits
VDS - DS pārtraukuma spriegums
Id - nepārtraukta noplūdes strāva
RDS ieslēgts - noplūdes avota pretestība
VGS - kanāla-avota spriegums
VGS TH - kanāla-avota sliekšņa spriegums
Qg - kanāla lādiņš
Minimālā darba temperatūra
Maksimālā darba temperatūra
Pd - jaudas izkliede
Kanāla režīms
APC-E SiC MOSFET 1200V 75mR, TO-247-4L, Industrial Grade
Datu lapa
268Ir noliktavā
Min.: 1
Vair.: 1

Through Hole TO-247-4L N-Channel 1 Channel 1.2 kV 27 A 98 mOhms - 10 V, 25 V 4.2 V 40 nC - 55 C + 175 C 151 W Enhancement
APC-E SiC MOSFET 650V 50mR, TO-247-4L, Industrial Grade
Datu lapa
288Ir noliktavā
Min.: 1
Vair.: 1

Through Hole TO-247-4L N-Channel 1 Channel 650 V 44 A 65 mOhms - 10 V, 25 V 4.2 V 45 nC - 55 C + 175 C 198 W Enhancement
APC-E SiC MOSFET 1200V 75mR, TO-247-4L, Automotive Grade
Datu lapa
290Ir noliktavā
Min.: 1
Vair.: 1

Through Hole TO-247-4L N-Channel 1 Channel 1.2 kV 27 A 98 mOhms - 10 V, 25 V 4.2 V 40 nC - 55 C + 175 C 151 W Enhancement
APC-E SiC MOSFET 650V 50mR, TO-247-4L, Automotive Grade
Datu lapa
270Ir noliktavā
Min.: 1
Vair.: 1

Through Hole TO-247-4L N-Channel 1 Channel 650 V 44 A 65 mOhms - 10 V, 25 V 4.2 V 45 nC - 55 C + 175 C 198 W Enhancement
APC-E SiC MOSFET 650V 27mR, TO-247-4L, Automotive Grade
Datu lapa
300Ir noliktavā
Min.: 1
Vair.: 1

Through Hole TO-247-4L N-Channel 1 Channel 650 V 76 A 35 mOhms - 10 V, 25 V 4.2 V 80 nC - 55 C + 175 C 298 W Enhancement
APC-E SiC MOSFET 1200V 30mR, TO-247-4L, Automotive Grade
Datu lapa
300Ir noliktavā
Min.: 1
Vair.: 1

Through Hole TO-247-4L N-Channel 1 Channel 1.2 kV 57 A 42 mOhms - 10 V, 25 V 4.2 V 91 nC - 55 C + 175 C 278 W Enhancement
APC-E SiC MOSFET 1200V 13mR, TO247-4L, Industrial Grade
Datu lapa
300Ir noliktavā
Min.: 1
Vair.: 1

Through Hole TO-247-4L N-Channel 1 Channel 1.2 kV 160 A 16 mOhms - 10 V, 25 V 3.6 V 213 nC - 55 C + 175 C 750 W Enhancement
APC-E SiC MOSFET 1200V 13mR, TO247-4L, Automotive Grade
Datu lapa
300Ir noliktavā
Min.: 1
Vair.: 1

Through Hole TO-247-4 1.2 kV 145 A 13 mOhms 18 V + 175 C
APC-E SiC MOSFET 650V 27mR, SAPKG-9L, Automotive Grade
Datu lapa
600Paredzamais 28.08.2026
Min.: 1
Vair.: 1
Rullis: 600

SMD/SMT SAPKG-9L N-Channel 1 Channel 650 V 81 A 35 mOhms - 10 V, 25 V 4.2 V 87 nC - 55 C + 175 C 298 W Enhancement
APC-E SiC MOSFET 650V 35mR, TO-247-4L, Automotive Grade
300Paredzamais 24.04.2026
Min.: 1
Vair.: 1

Through Hole TO-247-4L 650 V
APC-E SiC MOSFET 1200V 20mR, TO-247-4L, Industrial Grade
Datu lapa
300Paredzamais 29.07.2026
Min.: 1
Vair.: 1

Through Hole TO-247-4L N-Channel 1 Channel 1.2 kV 88 A 26 mOhms - 10 V, 25 V 4.2 V 154 nC - 55 C + 175 C 403 W Enhancement
APC-E SiC MOSFET 650V 27mR, TO-247-4L, Industrial Grade
Datu lapa
300Paredzamais 27.03.2026
Min.: 1
Vair.: 1

Through Hole TO-247-4L N-Channel 1 Channel 650 V 76 A 35 mOhms - 10 V, 25 V 4.2 V 80 nC - 55 C + 175 C 298 W Enhancement
APC-E SiC MOSFET 1200V 30mR, TO-247-4L, Industrial Grade
Datu lapa
300Paredzamais 27.03.2026
Min.: 1
Vair.: 1

Through Hole TO-247-4L N-Channel 1 Channel 1.2 kV 58 A 42 mOhms - 10 V, 25 V 4.2 V 91 nC - 55 C + 175 C 278 W Enhancement

APC-E SiC MOSFET 650V 65mR, TO-247-3L, Automotive Grade
300Paredzamais 01.05.2026
Min.: 1
Vair.: 1

Through Hole TO-247-3L 650 V
APC-E SiC MOSFET 650V 35mR, TO-247-4L, Industrial Grade
300Paredzamais 24.04.2026
Min.: 1
Vair.: 1

Through Hole TO-247-4L 650 V

APC-E SiC MOSFET 650V 65mR, TO-247-3L, Industrial Grade
300Paredzamais 01.05.2026
Min.: 1
Vair.: 1

Through Hole TO-247-3L 650 V
APC-E SiC MOSFET 1700V 1000mR, TO247-3L, Industrial Grade
Datu lapa
300Paredzamais 27.03.2026
Min.: 1
Vair.: 1

Through Hole TO-247-3 1.7 kV 6.8 A 1 kOhms 20 V + 175 C
APC-E SiC MOSFET 1200V 75mR, TO247-4L, Automotive Grade
Datu lapa
Noliktavā neesošas preces izpildes laiks 15 Nedēļas
Min.: 1
Vair.: 1

Through Hole TO-247-4 1.2 kV 41 A 75 mOhms 15 V + 175 C
APC-E SiC MOSFET 1200V 32mR, TO247-4L, Industrial Grade
Datu lapa
Noliktavā neesošas preces izpildes laiks 15 Nedēļas
Min.: 1
Vair.: 1

Through Hole TO-247-4 1.2 kV 77 A 32 mOhms 15 V + 175 C
APC-E SiC MOSFET 1200V 75mR, TO247-4L, Industrial Grade
Datu lapa
Noliktavā neesošas preces izpildes laiks 15 Nedēļas
Min.: 1
Vair.: 1

Through Hole TO-247-4 1.2 kV 35 A 75 mOhms 15 V + 175 C