CFD7 CoolMOS™ MOSFETs

Infineon Technologies CFD7 CoolMOS™ MOSFETs are ideal for resonant high power topologies and feature high voltage superjunction MOSFET technology. The MOSFETs have an integrated fast body diode and completes the CoolMOS 7 series. Typical high power switch-mode power supply (SMPS) applications include server, telecom, and EV charging stations.

Rezultāti: 76
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Daudz. RoHS ECAD modelis Tehnoloģija
Montāžas veids
Iepakojums / korpusa
Tranzistora polaritāte
Kanālu skaits
VDS - DS pārtraukuma spriegums
Id - nepārtraukta noplūdes strāva
RDS ieslēgts - noplūdes avota pretestība
VGS - kanāla-avota spriegums
VGS TH - kanāla-avota sliekšņa spriegums
Qg - kanāla lādiņš
Minimālā darba temperatūra
Maksimālā darba temperatūra
Pd - jaudas izkliede
Kanāla režīms
Kvalifikācija
Tirdzniecības nosaukums
Iepakojums
Infineon Technologies MOSFET HIGH POWER_NEW
Datu lapa
828Ir noliktavā
Min.: 1
Vair.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 25 A 90 mOhms - 20 V, 20 V 3.5 V 51 nC - 55 C + 150 C 125 W Enhancement Tube
Infineon Technologies MOSFET HIGH POWER_NEW
Datu lapa
2 543Ir noliktavā
MouseReel ir pieejams
Min.: 1
Vair.: 1
Rullis: 2 000

Si SMD/SMT HSOF-8 N-Channel 1 Channel 600 V 44 A 55 mOhms - 20 V, 20 V 4 V 67 nC - 55 C + 150 C 236 W Enhancement Reel, Cut Tape, MouseReel

Infineon Technologies MOSFET HIGH POWER_NEW
Datu lapa
3 346Ir noliktavā
Min.: 1
Vair.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 31 A 57 mOhms - 20 V, 20 V 3.5 V 67 nC - 55 C + 150 C 156 W Enhancement CoolMOS Tube

Infineon Technologies MOSFET AUTOMOTIVE_COOLMOS
Datu lapa
1 254Ir noliktavā
Min.: 1
Vair.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 45 A 50 mOhms - 20 V, 20 V 4 V 102 nC - 55 C + 150 C 227 W Enhancement AEC-Q101 CoolMOS Tube
Infineon Technologies MOSFET HIGH POWER_NEW
Datu lapa
3 364Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 3 000

Si SMD/SMT VSON-4 N-Channel 1 Channel 600 V 14 A 153 mOhms - 20 V, 20 V 3.5 V 28 nC - 40 C + 150 C 85 W Enhancement CoolMOS Reel, Cut Tape
Infineon Technologies MOSFET HIGH POWER_NEW
Datu lapa
1 354Ir noliktavā
MouseReel ir pieejams
Min.: 1
Vair.: 1
Rullis: 2 000

Si SMD/SMT HSOF-8 N-Channel 1 Channel 650 V 24 A 105 mOhms - 20 V, 20 V 4 V 36 nC - 55 C + 150 C 140 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET HIGH POWER_NEW
Datu lapa
831Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 1 000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 600 V 31 A 70 mOhms - 20 V, 20 V 4.5 V 67 nC - 55 C + 150 C 156 W Enhancement Reel, Cut Tape
Infineon Technologies MOSFET LOW POWER_NEW
Datu lapa
2 433Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 2 500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 600 V 7 A 360 mOhms - 20 V, 20 V 4.5 V 14 nC - 55 C + 150 C 43 W Enhancement Reel, Cut Tape
Infineon Technologies MOSFET HIGH POWER_NEW
Datu lapa
1 199Ir noliktavā
Min.: 1
Vair.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 14 A 144 mOhms - 20 V, 20 V 3.5 V 28 nC - 55 C + 150 C 75 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET HIGH POWER_NEW
Datu lapa
2 000Ir noliktavā
MouseReel ir pieejams
Min.: 1
Vair.: 1
Rullis: 2 000

Si SMD/SMT HSOF-8 N-Channel 1 Channel 650 V 33 A 75 mOhms - 20 V, 20 V 4 V 51 nC - 55 C + 150 C 188 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET HIGH POWER_NEW
Datu lapa
2 017Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 3 000

Si SMD/SMT VSON-4 N-Channel 1 Channel 650 V 17 A 160 mOhms - 20 V, 20 V 4.5 V 28 nC - 40 C + 150 C 98 W Enhancement Reel, Cut Tape
Infineon Technologies MOSFET HIGH POWER_NEW
Datu lapa
1 375Ir noliktavā
MouseReel ir pieejams
Min.: 1
Vair.: 1
Rullis: 1 700

Si SMD/SMT N-Channel 1 Channel 650 V 24 A 145 mOhms - 20 V, 20 V 4.5 V 28 nC - 55 C + 150 C 160 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET HIGH POWER_NEW
Datu lapa
2 875Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 3 000

Si SMD/SMT VSON-4 N-Channel 1 Channel 650 V 24 A 115 mOhms - 20 V, 20 V 4.5 V 41 nC - 40 C + 150 C 144 W Enhancement Reel, Cut Tape
Infineon Technologies MOSFET HIGH POWER_NEW
Datu lapa
778Ir noliktavā
Min.: 1
Vair.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 18 A 125 mOhms - 20 V, 20 V 3.5 V 36 nC - 55 C + 150 C 92 W Enhancement Tube
Infineon Technologies MOSFET HIGH POWER_NEW
Datu lapa
717Ir noliktavā
MouseReel ir pieejams
Min.: 1
Vair.: 1
Rullis: 2 000

Si SMD/SMT HSOF-8 N-Channel 1 Channel 650 V 28 A 90 mOhms - 20 V, 20 V 4 V 42 nC - 55 C + 150 C 160 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET AUTOMOTIVE_COOLMOS
Datu lapa
591Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 1 000
Si SMD/SMT TO-263-7 N-Channel 1 Channel 650 V 21 A 115 mOhms - 20 V, 20 V 4 V 41 nC - 40 C + 150 C 114 W Enhancement AEC-Q101 CoolMOS Reel, Cut Tape
Infineon Technologies MOSFET HIGH POWER_NEW
Datu lapa
872Ir noliktavā
Min.: 1
Vair.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 19 A 180 mOhms - 20 V, 20 V 4.7 V 17 nC - 55 C + 150 C 142 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET HIGH POWER_NEW
Datu lapa
752Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 750

Si SMD/SMT HDSOP-22 N-Channel 1 Channel 650 V 90 A 25 mOhms - 20 V, 30 V 4.5 V 141 nC - 55 C + 150 C 446 W Enhancement Reel, Cut Tape
Infineon Technologies MOSFET HIGH POWER_NEW
Datu lapa
552Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 750

Si - 20 V, 20 V CoolMOS Reel, Cut Tape
Infineon Technologies MOSFET HIGH POWER_NEW
Datu lapa
759Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 750

Si - 20 V, 20 V CoolMOS Reel, Cut Tape
Infineon Technologies MOSFET HIGH POWER_NEW
Datu lapa
731Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 750

Si - 20 V, 20 V CoolMOS Reel, Cut Tape
Infineon Technologies MOSFET HIGH POWER_NEW
Datu lapa
3 979Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 2 000

Si CoolMOS Reel, Cut Tape
Infineon Technologies MOSFET HIGH POWER_NEW
Datu lapa
86Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 750

Si - 20 V, 20 V CoolMOS Reel, Cut Tape
Infineon Technologies MOSFET HIGH POWER_NEW
Datu lapa
1 983Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 1 000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 600 V 38 A 55 mOhms - 20 V, 20 V 4.5 V 79 nC - 55 C + 150 C 178 W Enhancement Reel, Cut Tape
Infineon Technologies MOSFET AUTOMOTIVE_COOLMOS
Datu lapa
785Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 1 000
Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 650 V 45 A 50 mOhms - 20 V, 20 V 4 V 102 nC - 40 C + 150 C 227 W Enhancement AEC-Q101 CoolMOS Reel, Cut Tape