FFSP SiC Schottky Diodes

onsemi FFSP SiC (Silicon Carbide) Schottky Diodes are designed to leverage the advantages of Silicon Carbide over Silicon (Si) devices. FFSP SiC Schottky Diodes feature drastically higher forward surge capability, lower reverse leakage, and no reverse recovery current. These SiC Schottky Diodes also feature temperature-independent switching characteristics and excellent thermal performance. This results in improved system efficiency, faster-operating frequency, increased power density, reduced EMI, and reduced system size and cost.

Rezultāti: 11
Atlasīt Attēls Detaļas Nr. Raž. Apraksts Datu lapa Pieejamība Cenas noteikšana (EUR) Atlasiet rezultātus tabulā pēc vienības cenas, pamatojoties uz daudzumu. Daudz. RoHS ECAD modelis Montāžas veids Iepakojums / korpusa Konfigurācija If - tiešā strāva Vrrm - atkārtots pretspriegums Vf - tiešais spriegums Ifsm - tiešā impulsstrāva IR - pretstrāva Minimālā darba temperatūra Maksimālā darba temperatūra Sērija Iepakojums
onsemi SiC Schottky Diodes 650V 12A SIC SBD 804Ir noliktavā
Min.: 1
Vair.: 1

Through Hole TO-220-2 Single 12 A 650 V 1.5 V 70 A 200 uA - 55 C + 175 C FFSP1265A Tube
onsemi SiC Schottky Diodes SIC TO220 SBD 8A 650V 1 316Ir noliktavā
Min.: 1
Vair.: 1

Through Hole TO-220-2 Single 8 A 650 V 1.5 V 49 A 200 uA - 55 C + 175 C FFSP0865A Tube
onsemi SiC Schottky Diodes SIC TO220 SBD 10A 650V 757Ir noliktavā
Min.: 1
Vair.: 1

Through Hole TO-220-2 Single 10 A 650 V 1.5 V 56 A 200 uA - 55 C + 175 C FFSP1065A Tube
onsemi SiC Schottky Diodes 650V 16A SIC SBD 263Ir noliktavā
Min.: 1
Vair.: 1

Through Hole TO-220-2 Single 16 A 650 V 1.5 V 90 A 200 uA - 55 C + 175 C FFSP1665A Tube
onsemi SiC Schottky Diodes 1200V SiC SBD 8A 740Ir noliktavā
Min.: 1
Vair.: 1

Through Hole TO-220-2 Single 8 A 1.2 kV 1.45 V 68 A 200 uA - 55 C + 175 C FFSP08120A Tube
onsemi SiC Schottky Diodes 1200V SiC SBD 15A 570Ir noliktavā
Min.: 1
Vair.: 1

Through Hole TO-220-2 Single 15 A 1.2 kV 1.45 V 115 A 200 uA - 55 C + 175 C FFSP15120A Tube
onsemi SiC Schottky Diodes SIC TO220 SBD 20A 650V 764Ir noliktavā
Min.: 1
Vair.: 1

Through Hole TO-220-2 Single 20 A 650 V 1.5 V 105 A 200 uA - 55 C + 175 C FFSP2065A Tube
onsemi SiC Schottky Diodes SIC DIODE 650V 10A 850Ir noliktavā
Min.: 1
Vair.: 1

Through Hole TO-220-2 Single 10 A 650 V 1.38 V 45 A 40 uA - 55 C + 175 C FFSP1065B Tube
onsemi SiC Schottky Diodes 1200V 20A Silicon Carbide Schtky Diode 105Ir noliktavā
Min.: 1
Vair.: 1

Through Hole TO-220-2 Single 20 A 1.2 kV 1.45 V 135 A 200 uA - 55 C + 175 C FFSP20120A Tube
onsemi SiC Schottky Diodes 650V SiC SBD 30A 132Ir noliktavā
Min.: 1
Vair.: 1

Through Hole TO-220-2 Single 30 A 650 V 1.5 V 150 A 200 uA - 55 C + 175 C FFSP3065A Tube
onsemi SiC Schottky Diodes SIC DIODE 650V 20A
799Paredzamais 02.03.2026
Min.: 1
Vair.: 1

Through Hole TO-220-2 Single 20 A 650 V 1.38 V 84 A 40 uA - 55 C + 175 C FFSP2065B Tube