Automotive U-MOSIX-H Power MOSFETs

Toshiba Automotive U-MOSIX-H Power MOSFETs are 40V N-channel power MOSFETs ideal for automotive applications. These devices are housed in a small, low-resistance SOP Advance (WF) package. They feature low on-resistance, which can reduce conduction loss. The U-MOSIX-H series also lowers switching noise compared with Toshiba Electronic Devices and Storage Corporation’s previous series (U-MOSIV).

Rezultāti: 13
Atlasīt Attēls Detaļas Nr. Raž. Apraksts Datu lapa Pieejamība Cenas noteikšana (EUR) Atlasiet rezultātus tabulā pēc vienības cenas, pamatojoties uz daudzumu. Daudz. RoHS ECAD modelis Tehnoloģija Montāžas veids Iepakojums / korpusa Tranzistora polaritāte Kanālu skaits VDS - DS pārtraukuma spriegums Id - nepārtraukta noplūdes strāva RDS ieslēgts - noplūdes avota pretestība VGS - kanāla-avota spriegums VGS TH - kanāla-avota sliekšņa spriegums Qg - kanāla lādiņš Minimālā darba temperatūra Maksimālā darba temperatūra Pd - jaudas izkliede Kanāla režīms Kvalifikācija Iepakojums
Toshiba MOSFET 180W 1MHz Automotive; AEC-Q101 26 111Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 2 000

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 40 V 120 A 1.35 mOhms - 20 V, 20 V 3 V 103 nC + 175 C 180 W Enhancement AEC-Q101 Reel, Cut Tape
Toshiba MOSFET 132W 1MHz Automotive; AEC-Q101 17 266Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 5 000

Si SMD/SMT DSOP-Advance-8 N-Channel 1 Channel 40 V 120 A 1.14 mOhms - 20 V, 20 V 3 V 55 nC - 55 C + 175 C 132 W Enhancement AEC-Q101 Reel, Cut Tape
Toshiba MOSFET 205W 1MHz Automotive; AEC-Q101 1 831Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 1 000

Si SMD/SMT TO-220SM-3 N-Channel 1 Channel 40 V 160 A 1.35 mOhms - 20 V, 20 V 3 V 103 nC + 175 C 205 W Enhancement AEC-Q101 Reel, Cut Tape
Toshiba MOSFET 132W 1MHz Automotive; AEC-Q101 4 727Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 5 000

Si SMD/SMT SOP-Advance-8 N-Channel 1 Channel 40 V 120 A 1.14 mOhms - 20 V, 20 V 3 V 55 nC + 175 C 132 W Enhancement AEC-Q101 Reel, Cut Tape
Toshiba MOSFET PD=375W F=1MHZ AEC-Q101 757Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 1 000

Si SMD/SMT TO-220SM-3 N-Channel 1 Channel 40 V 250 A 740 uOhms - 20 V, 20 V 3 V 227 nC - 55 C + 175 C 375 W Enhancement AEC-Q101 Reel, Cut Tape, MouseReel
Toshiba MOSFET 170W 1MHz Automotive; AEC-Q101 7 881Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 5 000

Si SMD/SMT SOP-Advance-8 N-Channel 1 Channel 40 V 150 A 790 uOhms - 20 V, 20 V 3 V 85 nC + 175 C 170 W Enhancement AEC-Q101 Reel, Cut Tape
Toshiba MOSFET S-TOGL N-CH 40V 160A 2 440Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 1 500

Si Reel, Cut Tape
Toshiba MOSFET UMOS9 SOP-ADV(N) RDSon=0.65mohm(max) 23 062Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 5 000

Si SMD/SMT SOP-8 N-Channel 1 Channel 30 V 420 A 410 uOhms - 20 V, 20 V 2.1 V 110 nC + 175 C 210 W Enhancement Reel, Cut Tape, MouseReel
Toshiba MOSFET UMOS9 SOP-ADV(N) RDSon=0.92mohm(max) 30 034Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 5 000

Si SMD/SMT SOP-8 N-Channel 1 Channel 30 V 320 A 610 uOhms - 20 V, 20 V 2.1 V 81 nC + 175 C 170 W Enhancement Reel, Cut Tape
Toshiba MOSFET 170W 1MHz Automotive; AEC-Q101 3 581Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 5 000

Si SMD/SMT DSOP-Advance-8 N-Channel 1 Channel 40 V 150 A 790 uOhms - 20 V, 20 V 3 V 85 nC - 55 C + 175 C 170 W Enhancement AEC-Q101 Reel, Cut Tape, MouseReel
Toshiba MOSFET 205W 1MHz Automotive; AEC-Q101 989Ir noliktavā
14 000Pēc pasūtījuma
Min.: 1
Vair.: 1
Rullis: 1 000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 40 V 160 A 1.5 mOhms - 20 V, 20 V 3 V 103 nC + 175 C 205 W Enhancement AEC-Q101 Reel, Cut Tape
Toshiba MOSFET UMOS9 SOP-ADV(N) RDSon=1.24mohm(max)
28 044Pēc pasūtījuma
Min.: 1
Vair.: 1
Rullis: 5 000

Si SMD/SMT SOP-8 N-Channel 1 Channel 40 V 270 A 1 mOhms - 20 V, 20 V 2.4 V 74 nC + 175 C 170 W Enhancement Reel, Cut Tape
Toshiba MOSFET UMOS9 SOP-ADV(N) RDSon=1.34mohm(max)
4 904Paredzamais 16.03.2026
Min.: 1
Vair.: 1
Rullis: 5 000

Si SMD/SMT SOP-8 N-Channel 1 Channel 60 V 280 A 1 mOhms - 20 V, 20 V 2.5 V 91 nC + 175 C 210 W Enhancement Reel, Cut Tape, MouseReel