DTMOSVI MOSFETs

Toshiba DTMOSVI MOSFETs offer a low drain-source on-resistance of 0.033Ω (typical), a drain-source voltage of 650V, and a drain current of 57A. The DTMOSVI MOSFETs offer high-speed switching properties with lower capacitance. These MOSFETs are ideal for use in switching power supply applications.

Rezultāti: 16
Atlasīt Attēls Detaļas Nr. Raž. Apraksts Datu lapa Pieejamība Cenas noteikšana (EUR) Atlasiet rezultātus tabulā pēc vienības cenas, pamatojoties uz daudzumu. Daudz. RoHS ECAD modelis Tehnoloģija Montāžas veids Iepakojums / korpusa Tranzistora polaritāte Kanālu skaits VDS - DS pārtraukuma spriegums Id - nepārtraukta noplūdes strāva RDS ieslēgts - noplūdes avota pretestība VGS - kanāla-avota spriegums VGS TH - kanāla-avota sliekšņa spriegums Qg - kanāla lādiņš Minimālā darba temperatūra Maksimālā darba temperatūra Pd - jaudas izkliede Kanāla režīms Tirdzniecības nosaukums Iepakojums
Toshiba MOSFET 230W 1MHz 8x8DFN 7 394Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 2 500

Si SMD/SMT DFN8x8-5 N-Channel 1 Channel 650 V 30 A 99 mOhms - 30 V, 30 V 4 V 47 nC - 55 C + 150 C 230 W Enhancement DTMOSVI Reel, Cut Tape, MouseReel
Toshiba MOSFET POWER MOSFET TRANSISTOR TOLL PD=230W F=1MHZ 1 055Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 2 000

Si SMD/SMT 2-10AF1A-9 N-Channel 1 Channel 650 V 30 A 70 mOhms - 30 V, 30 V 4 V 47 nC - 55 C + 150 C 230 W Enhancement Reel, Cut Tape, MouseReel
Toshiba MOSFET MOSFET 650V 110mOhms DTMOS-VI 432Ir noliktavā
Min.: 1
Vair.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 24 A 110 mOhms - 30 V, 30 V 4 V 40 nC - 55 C + 150 C 190 W Enhancement Tube
Toshiba MOSFET POWER MOSFET TRANSISTOR TOLL PD=190W F=1MHZ 3 792Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 2 000

Si SMD/SMT 2-10AF1A-9 N-Channel 1 Channel 650 V 24 A 86 mOhms - 30 V, 30 V 4 V 40 nC - 55 C + 150 C 190 W Enhancement Reel, Cut Tape, MouseReel
Toshiba MOSFET POWER MOSFET TRANSISTOR TOLL PD=130W F=1MHZ 2 000Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 2 000

Si SMD/SMT 2-10AF1A-9 N-Channel 1 Channel 650 V 15 A 149 mOhms - 30 V, 30 V 4 V 25 nC - 55 C + 150 C 130 W Enhancement Reel, Cut Tape, MouseReel

Toshiba MOSFET Power MOSFET 57A 360W 650V 487Ir noliktavā
1 290Paredzamais 17.07.2026
Min.: 1
Vair.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 57 A 40 mOhms - 30 V, 30 V 3 V 105 nC - 55 C + 150 C 360 W Enhancement DTMOSVI Tube
Toshiba MOSFET POWER MOSFET TRANSISTOR TOLL PD=270W F=1MHZ 1 232Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 2 000

Si SMD/SMT 2-10AF1A-9 N-Channel 1 Channel 650 V 38 A 51 mOhms - 30 V, 30 V 4 V 62 nC - 55 C + 150 C 270 W Enhancement Reel, Cut Tape, MouseReel
Toshiba MOSFET 270W 1MHz TO-247 19Ir noliktavā
60Paredzamais 16.03.2026
Min.: 1
Vair.: 1
Rullis: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 30 A 65 mOhms - 30 V, 30 V 4 V 62 nC - 55 C + 150 C 270 W Enhancement DTMOSVI Reel, Cut Tape
Toshiba MOSFET Pb-F POWER MOSFET TRANSISTOR TO-220SIS PD=45W F=1MHZ 353Ir noliktavā
Min.: 1
Vair.: 1

Si Through Hole TO-220SIS-3 N-Channel 1 Channel 650 V 30 A 90 mOhms - 30 V, 30 V 3 V 47 nC - 55 C + 150 C 45 W Enhancement DTMOSVI Tube
Toshiba MOSFET 230W 1MHz TO-247 2Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 30 A 90 mOhms - 30 V, 30 V 4 V 47 nC - 55 C + 150 C 230 W Enhancement DTMOSVI Reel, Cut Tape
Toshiba MOSFET 650V DTMOS6-HSD TO-247 95mohm 30Ir noliktavā
Min.: 1
Vair.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 29 A 95 mOhms - 30 V, 30 V 4.5 V 50 nC + 150 C 230 W Enhancement Tube
Toshiba MOSFET Pb-F POWER MOSFET TRANSISTOR TO-220AB(OS) PD=130W F=1MHZ 20Ir noliktavā
Min.: 1
Vair.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 9.5 A 550 mOhms - 20 V, 20 V 3 V 19 nC - 55 C + 150 C 130 W Enhancement DTMOSVI Tube
Toshiba MOSFET Pb-F POWER MOSFET TRANSISTOR DPAK PD=80W F=1MHZ 351Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 2 000

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 500 V 9.7 A 430 mOhms - 30 V, 30 V 2.7 V 20 nC - 55 C + 150 C 80 W Enhancement DTMOSVI Reel, Cut Tape, MouseReel
Toshiba MOSFET 360W 1MHz TO-247-4L(T) Nav noliktavā
Min.: 1
Vair.: 1
Rullis: 25

Si Through Hole TO-247-4 N-Channel 1 Channel 650 V 57 A 40 mOhms - 30 V, 30 V 4 V 105 nC - 55 C + 150 C 360 W Enhancement DTMOSVI Reel, Cut Tape
Toshiba MOSFET Pb-F POWER MOSFET TRANSISTOR TO247-4L PD=230W F=1MHZ Nav noliktavā
Min.: 1
Vair.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 30 A 90 mOhms - 30 V, 30 V 3 V 47 nC - 55 C + 150 C 45 W Enhancement DTMOSVI Tube
Toshiba MOSFET POWER MOSFET TRANSISTOR TOLL PD=150W F=1MHZ Nav noliktavā
Min.: 2 000
Vair.: 2 000
Rullis: 2 000

Si SMD/SMT 2-10AF1A-9 N-Channel 1 Channel 650 V 18 A 122 mOhms - 30 V, 30 V 4 V 29 nC - 55 C + 150 C 150 W Enhancement Reel