MDmesh™ M9 Power MOSFETs

STMicroelectronics MDmesh™ M9 Power MOSFETs feature enhanced device structure, low ON resistance, and low gate charge values. These power MOSFETs offer high reverse diode dv/dt and MOSFET dv/dt ruggedness, high power density, and low conduction losses. The MDmesh M9 Power MOSFETs also offer high switching speed, high efficiency, and low switching power losses. These power MOSFETs are designed with innovative high-voltage super-junction technology that delivers impressive Figure of Merit ((FoM). The high FoM enables higher power levels and density for more compact solutions. Typical applications include servers, telecom data centers, 5G power stations, microinverters, and fast chargers.

Rezultāti: 21
Atlasīt Attēls Detaļas Nr. Raž. Apraksts Datu lapa Pieejamība Cenas noteikšana (EUR) Atlasiet rezultātus tabulā pēc vienības cenas, pamatojoties uz daudzumu. Daudz. RoHS ECAD modelis Tehnoloģija Montāžas veids Iepakojums / korpusa Tranzistora polaritāte Kanālu skaits VDS - DS pārtraukuma spriegums Id - nepārtraukta noplūdes strāva RDS ieslēgts - noplūdes avota pretestība VGS - kanāla-avota spriegums VGS TH - kanāla-avota sliekšņa spriegums Qg - kanāla lādiņš Minimālā darba temperatūra Maksimālā darba temperatūra Pd - jaudas izkliede Kanāla režīms Kvalifikācija Tirdzniecības nosaukums Iepakojums
STMicroelectronics MOSFET N-channel 250 V, 14 mOhm typ., 54 A MDmesh M9 Power MOSFET in a D2PAK package 132Ir noliktavā
1 000Pēc pasūtījuma
Min.: 1
Vair.: 1
: 1 000

Si SMD/SMT D2PAK-3 N-Channel 1 Channel 250 V 56 A 18 mOhms 30 V 4.2 V 85 nC - 55 C + 150 C 320 W Enhancement Reel, Cut Tape, MouseReel
STMicroelectronics MOSFET N-channel 650 V, 48 mOhm typ., 44 A MDmesh DM9 Power MOSFET in a PowerFLAT 8x8 HV package 218Ir noliktavā
Min.: 1
Vair.: 1
Maks.: 50
: 3 000

Si SMD/SMT PowerFLAT-4 N-Channel 1 Channel 650 V 44 A 65 mOhms - 30 V, 30 V 4.5 V 78 nC - 55 C + 150 C 223 W Enhancement Reel, Cut Tape, MouseReel
STMicroelectronics MOSFET N-channel 650 V, 38 mOhm typ., 55 A MDmesh DM9 Power MOSFET in a PowerFLAT 8x8 HV package 175Ir noliktavā
Min.: 1
Vair.: 1
Maks.: 50
: 3 000

Si SMD/SMT PowerFLAT-4 N-Channel 1 Channel 650 V 55 A 35 mOhms - 30 V, 30 V 4.5 V 107 nC - 55 C + 150 C 167 W Enhancement Reel, Cut Tape, MouseReel
STMicroelectronics MOSFET N-channel 650 V, 19.9 mOhm typ., 95 A MDmesh M9 Power MOSFET 517Ir noliktavā
Min.: 1
Vair.: 1

Si Through Hole TO-247-4 N-Channel 1 Channel 650 V 95 A 23 mOhms - 30 V, 30 V 4.2 V 230 nC - 55 C + 150 C 463 W Enhancement Tube
STMicroelectronics MOSFET N-channel 600 V, 38 mOhm typ., 56 A MDmesh DM9 Power MOSFET 926Ir noliktavā
Min.: 1
Vair.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 56 A 43 mOhms - 30 V, 30 V 4.5 V 78.6 nC - 55 C + 150 C 245 W Enhancement Tube
STMicroelectronics MOSFET N-channel 600 V, 51 mOhm typ., 39 A MDmesh DM9 Power MOSFET 250Ir noliktavā
Min.: 1
Vair.: 1
: 3 000

Si SMD/SMT PowerFLAT-5 N-Channel 600 V 39 A 65 mOhms - 30 V, 30 V 4.5 V 66 nC - 55 C + 150 C 202 W Enhancement MDmesh Reel, Cut Tape, MouseReel
STMicroelectronics MOSFET N-channel 600 V 32 mOhm typ. 62 A MDmesh M9 Power MOSFET in a TO-247 long leads 266Ir noliktavā
Min.: 1
Vair.: 1
Maks.: 50

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 62 A 35 mOhms 30 V 4.2 V 112 nC - 55 C + 150 C 321 mW Enhancement Tube
STMicroelectronics MOSFET Automotive-grade N-channel 650 V, 38 mOhm typ., 51 A MDmesh DM9 Power MOSFET 994Ir noliktavā
Min.: 1
Vair.: 1
: 1 000

Si SMD/SMT H2PAK-7 N-Channel 1 Channel 650 V 51 A 50 mOhms 30 V 4.5 V 100 nC - 50 C + 150 C 266 W Enhancement AEC-Q101 Reel, Cut Tape
STMicroelectronics MOSFET Automotive-grade N-channel 600 V, 76 mOhm typ., 27 A MDmesh DM9 Power MOSFET 640Ir noliktavā
1 000Paredzamais 07.09.2026
Min.: 1
Vair.: 1
: 1 000

Si SMD/SMT H2PAK-2 N-Channel 1 Channel 600 V 27 A 99 mOhms - 30 V, 30 V 4.5 V 44 nC - 55 C + 150 C 179 W Enhancement AEC-Q101 Reel, Cut Tape, MouseReel
STMicroelectronics MOSFET N-channel 650 V, 39 mOhm typ., 54 A MDmesh M9 Power MOSFET 580Ir noliktavā
Min.: 1
Vair.: 1

Si Through Hole TO-247-4 N-Channel 1 Channel 650 V 54 A 45 mOhms - 30 V, 30 V 4.2 V 80 nC - 55 C + 150 C 312 W Enhancement Tube
STMicroelectronics MOSFET N-channel 650 V, 19.9 mOhm typ., 95 A MDmesh M9 Power MOSFET 283Ir noliktavā
Min.: 1
Vair.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 95 A - 30 V, 30 V 4.2 V 230 nC - 55 C + 150 C Enhancement Tube
STMicroelectronics MOSFET N-channel 650 V, 132 mOhm typ., 17 A MDmesh M9 Power MOSFET 738Ir noliktavā
Min.: 1
Vair.: 1
: 2 500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 650 V 17 A 160 mOhms - 30 V, 30 V 4.2 V 32 nC - 55 C + 150 C 106 W Enhancement Reel, Cut Tape, MouseReel
STMicroelectronics MOSFET N-channel 600 V, 38 mOhm typ., 56 A MDmesh DM9 Power MOSFET 78Ir noliktavā
Min.: 1
Vair.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 56 A 43 mOhms - 30 V, 30 V 4.5 V 78.6 nC - 55 C + 150 C 312 W Enhancement Tube
STMicroelectronics MOSFET N-channel 650 V, 39 mOhm typ., 55 A MDmesh M9 Power MOSFET 1 190Ir noliktavā
Min.: 1
Vair.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 55 A 45 mOhms - 30 V, 30 V 4.2 V 80 nC - 55 C + 150 C 245 W Enhancement Tube
STMicroelectronics MOSFET N-channel 650 V, 128 mOhm typ., 20 A MDmesh M9 Power MOSFET 86Ir noliktavā
Min.: 1
Vair.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 20 A 150 mOhms - 30 V, 30 V 3.2 V 32 nC - 55 C + 150 C 140 W Enhancement Tube
STMicroelectronics MOSFET N-channel 650 V, 39 mOhm typ., 54 A MDmesh M9 Power MOSFET 5Ir noliktavā
Min.: 1
Vair.: 1

Si Through Hole N-Channel 1 Channel 650 V 54 A 45 mOhms - 30 V, 30 V 4.2 V 80 nC - 55 C + 150 C 312 W Enhancement Tube
STMicroelectronics MOSFET N-channel 650 V, 36 mOhm typ., 58 A MDmesh M9 Power MOSFET
2 814Paredzamais 26.10.2026
Min.: 1
Vair.: 1
: 3 000

Si SMD/SMT PowerFLAT-5 N-Channel 1 Channel 650 V 58 A 44 mOhms 30 V 4.2 V 110 nC - 55 C + 150 C 166 W Enhancement MDmesh Reel, Cut Tape, MouseReel
STMicroelectronics MOSFET Automotive-grade N-channel 600 V, 37 mOhm typ., 54 A MDmesh DM9 Power MOSFET
600Pēc pasūtījuma
Min.: 1
Vair.: 1
: 600

Si SMD/SMT HU3PAK-7 N-Channel 1 Channel 600 V 54 A 46 mOhms 30 V 4.5 V 77 nC - 55 C + 150 C 245 W Enhancement AEC-Q101 Reel, Cut Tape
STMicroelectronics MOSFET Automotive-grade N-channel 650 V, 38 mOhm typ., 51 A MDmesh DM9 Power MOSFET
1 200Pēc pasūtījuma
Min.: 1
Vair.: 1
: 600

Si SMD/SMT HU3PAK-7 N-Channel 1 Channel 650 V 51 A 50 mOhms 30 V 4.5 V 100 nC - 55 C + 150 C 245 W Enhancement AEC-Q101 Reel, Cut Tape
STMicroelectronics STO60N030M9
STMicroelectronics MOSFET N-channel 600 V, 23 mOhm typ., 79 A MDmesh M9 Power MOSFET in a TO-LL package
1 800Paredzamais 21.12.2026
Min.: 1
Vair.: 1
: 1 800

Reel, Cut Tape
STMicroelectronics STO60N045DM9
STMicroelectronics MOSFET N-channel 600 V, 39 mOhm typ., 55 A, MDmesh DM9 Power MOSFET in a TO-LL package
1 800Paredzamais 07.09.2026
Min.: 1
Vair.: 1
: 1 800

Reel, Cut Tape