PowerTrench tehnoloģija

onsemi PowerTrench Technology represents the advancement of PowerTrench technology, especially from T6 to T10, which signifies a breakthrough in power electronics. Developed by onsemi, PowerTrench MOSFETs offer enhanced efficiency and performance across various applications. The shift from T6/T8 to T10 significantly improves on-resistance and switching performance, which is crucial for energy-efficient designs.

Rezultāti: 18
Atlasīt Attēls Detaļas Nr. Raž. Apraksts Datu lapa Pieejamība Cenas noteikšana (EUR) Atlasiet rezultātus tabulā pēc vienības cenas, pamatojoties uz daudzumu. Daudz. RoHS ECAD modelis Tehnoloģija Montāžas veids Iepakojums / korpusa Tranzistora polaritāte Kanālu skaits VDS - DS pārtraukuma spriegums Id - nepārtraukta noplūdes strāva RDS ieslēgts - noplūdes avota pretestība VGS - kanāla-avota spriegums VGS TH - kanāla-avota sliekšņa spriegums Qg - kanāla lādiņš Minimālā darba temperatūra Maksimālā darba temperatūra Pd - jaudas izkliede Kanāla režīms Tirdzniecības nosaukums Iepakojums
onsemi MOSFET T10 80V STD NCH MOSFET SO8FL 4 102Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 1 500

Si SMD/SMT SO-8 N-Channel 1 Channel 80 V 119 A 3.5 mOhms - 20 V, 20 V 3.6 V 21 nC - 55 C + 170 C 107 W Enhancement Reel, Cut Tape
onsemi MOSFET T10S 80V SG NCH MOSFET SO8FL HE WF 14 461Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 1 500

Si SMD/SMT SO8FL-8 N-Channel 1 Channel 80 V 253 A 1.43 mOhms - 20 V, 20 V 3.6 V 83 nC - 55 C + 175 C 194 W Enhancement Reel, Cut Tape
onsemi MOSFET 40V T10M IN S08FL HEFET GEN 2 PACKAGE 1 955Ir noliktavā
1 500Paredzamais 02.03.2026
Min.: 1
Vair.: 1
Rullis: 1 500

Si SMD/SMT DFN-5 N-Channel 1 Channel 40 V 509 A 420 uOhms - 20 V, 20 V 3.5 V 133 nC - 55 C + 175 C 197 W Enhancement Reel, Cut Tape
onsemi MOSFET 40V T10M IN S08FL HEFET GEN 2 PACKAGE 4 016Ir noliktavā
1 500Paredzamais 17.04.2026
Min.: 1
Vair.: 1
Rullis: 1 500

Si SMD/SMT DFN-5 N-Channel 1 Channel 40 V 380 A 570 uOhms - 20 V, 20 V 3.5 V 86.4 nC - 55 C + 175 C 150 W Enhancement Reel, Cut Tape, MouseReel
onsemi MOSFET 40V T10M IN S08FL PACKAGE 2 158Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 1 500

Si SMD/SMT DFN-5 N-Channel 1 Channel 40 V 233 A 1.05 mOhms - 20 V, 20 V 3.5 V 49.1 nC - 55 C + 175 C 104 W Enhancement Reel, Cut Tape
onsemi MOSFET 40V T10M IN S08FL PACKAGE 6 718Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 1 500

Si SMD/SMT DFN-5 N-Channel 1 Channel 40 V 195 A 1.3 mOhms - 20 V, 20 V 3.5 V 38.5 nC - 55 C + 175 C 90 W Enhancement Reel, Cut Tape
onsemi MOSFET T10 80V STD NCH MOSFET SO8FL 2 997Ir noliktavā
7 500Paredzamais 05.02.2027
Min.: 1
Vair.: 1
Rullis: 1 500

Si SMD/SMT DFN-5 N-Channel 1 Channel 80 V 201 A 1.9 mOhms - 20 V, 20 V 3.6 V 39 nC - 55 C + 175 C 164 W Enhancement Reel, Cut Tape
onsemi MOSFET 40V T10M IN S08FL PACKAGE 5 923Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 1 500

Si SMD/SMT DFN-5 N-Channel 1 Channel 40 V 111 A 2.35 mOhms - 20 V, 20 V 3.5 V 22.1 nC - 55 C + 175 C 53 W Enhancement Reel, Cut Tape
onsemi MOSFET T10 80V STD NCH MOSFET SO8FL 6 594Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 1 500

Si SMD/SMT DFN-5 N-Channel 1 Channel 80 V 181 A 2.1 mOhms - 20 V, 20 V 3.6 V 53 nC - 55 C + 175 C 148 W Enhancement Reel, Cut Tape
onsemi MOSFET T10 80V STD NCH MOSFET SO8FL 5 687Ir noliktavā
3 000Paredzamais 03.04.2026
Min.: 1
Vair.: 1
Rullis: 1 500

Si SMD/SMT DFN-5 N-Channel 1 Channel 80 V 135 A 3 mOhms - 20 V, 20 V 3.6 V 23 nC - 55 C + 175 C 119 W Enhancement Reel, Cut Tape, MouseReel
onsemi MOSFET 40V T10M IN S08FL HEFET GEN 2 PACKAGE 280Ir noliktavā
10 500Pēc pasūtījuma
Min.: 1
Vair.: 1
Rullis: 1 500

Si SMD/SMT DFN-5 N-Channel 1 Channel 40 V 414 A 520 uOhms - 20 V, 20 V 3.5 V 97.5 nC - 55 C + 175 C 163 W Enhancement Reel, Cut Tape
onsemi MOSFET 40V T10M IN S08FL PACKAGE 188Ir noliktavā
12 000Pēc pasūtījuma
Min.: 1
Vair.: 1
Rullis: 1 500

Si SMD/SMT DFN-5 N-Channel 1 Channel 40 V 323 A 700 uOhms - 20 V, 20 V 3.5 V 72.1 nC - 55 C + 175 C 134 W Enhancement Reel, Cut Tape
onsemi MOSFET 40V T10M IN S08FL PACKAGE 1 333Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 1 500

Si SMD/SMT DFN-5 N-Channel 1 Channel 40 V 83 A 3.1 mOhms - 20 V, 20 V 3.5 V 15.6 nC - 55 C + 175 C 39 W Enhancement Reel, Cut Tape
onsemi MOSFET PTNG 100V LOW Q 12MOHM N-FET U8FL 9 702Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 1 500

Si WDFN-8 PowerTrench Reel, Cut Tape
onsemi MOSFET T10 80V STD NCH MOSFET SO8FL 2 039Ir noliktavā
9 000Paredzamais 23.10.2026
Min.: 1
Vair.: 1
Rullis: 1 500

Si SMD/SMT SO-8 N-Channel 1 Channel 80 V 154 A 2.6 mOhms - 20 V, 20 V 3.6 V 28 nC - 55 C + 175 C 133 W Enhancement Reel, Cut Tape
onsemi MOSFET T10S 80V SG NCH MOSFET TOLL
5 970Pēc pasūtījuma
Min.: 1
Vair.: 1
Rullis: 2 000

Si SMD/SMT N-Channel 1 Channel 80 V 457 A 790 uOhms - 20 V, 20 V 3.6 V 174 nC - 55 C + 175 C 325 W Enhancement Reel, Cut Tape, MouseReel

onsemi MOSFET PTNG 100V LOW Q3.2MOHM N-FET HE SO8FL
2 741Paredzamais 13.03.2026
Min.: 1
Vair.: 1
Rullis: 1 500

Si SMD/SMT N-Channel 1 Channel 100 V 142 A 3.5 mOhms - 20 V, 20 V 4 V 48 nC - 55 C + 150 C 155 W Enhancement PowerTrench Reel, Cut Tape, MouseReel
onsemi MOSFET PTNG 100V LOW Q 4.2MOHM N-FET SO8FL Noliktavā neesošas preces izpildes laiks 27 Nedēļas
Min.: 1
Vair.: 1
Rullis: 1 500

Si SMD/SMT SO-8FL-4 N-Channel 1 Channel 100 V 113 A 4.3 mOhms - 20 V, 20 V 4 V 25 nC - 55 C + 150 C 132 W Enhancement PowerTrench Reel, Cut Tape, MouseReel