Automotive U-MOSVI Power MOSFETs

Toshiba Automotive U-MOSVI Power MOSFETs are -40V P-channel power MOSFETs for automotive applications. These devices feature a gate drive voltage of -4.5V compared with -6V for the conventional products in the DPAK+ package. This feature allows systems to be used even when the battery voltage drops. The Toshiba Automotive U-MOSVI Power MOSFETs feature low on-resistance.

Rezultāti: 18
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Toshiba MOSFET 375W 1MHz Automotive; AEC-Q101 46 406Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 1 000

Si SMD/SMT TO-220SM-3 P-Channel 1 Channel 40 V 200 A 1.8 mOhms - 20 V, 10 V 3 V 460 nC + 175 C 375 W Enhancement AEC-Q101 Reel, Cut Tape, MouseReel
Toshiba MOSFET 27W 1MHz Automotive; AEC-Q101 45 534Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 2 000

Si SMD/SMT DPAK-3 (TO-252-3) P-Channel 1 Channel 60 V 8 A 104 mOhms - 20 V, 10 V 3 V 19 nC + 175 C 27 W Enhancement AEC-Q101 Reel, Cut Tape, MouseReel
Toshiba MOSFET 90W 1MHz Automotive; AEC-Q101 2 614Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 2 000

Si SMD/SMT DPAK-3 (TO-252-3) P-Channel 1 Channel 40 V 60 A 6.3 mOhms - 20 V, 10 V 3 V 125 nC + 175 C 90 W Enhancement AEC-Q101 Reel, Cut Tape
Toshiba MOSFET 27W 1MHz Automotive; AEC-Q101 19 147Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 2 000

Si SMD/SMT DPAK-3 (TO-252-3) P-Channel 1 Channel 40 V 10 A 44 mOhms - 20 V, 10 V 3 V 19 nC + 175 C 27 W Enhancement AEC-Q101 Reel, Cut Tape
Toshiba MOSFET 100W 1MHz Automotive; AEC-Q101 4 116Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 2 000

Si SMD/SMT DPAK-3 (TO-252-3) P-Channel 1 Channel 40 V 80 A 5.2 mOhms - 20 V, 10 V 3 V 158 nC + 175 C 100 W Enhancement AEC-Q101 Reel, Cut Tape
Toshiba MOSFET 68W 1MHz Automotive; AEC-Q101 46 532Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 2 000

Si SMD/SMT DPAK-3 (TO-252-3) P-Channel 1 Channel 40 V 40 A 9.1 mOhms - 20 V, 10 V 3 V 83 nC + 175 C 68 W Enhancement AEC-Q101 Reel, Cut Tape
Toshiba MOSFET 41W 1MHz Automotive; AEC-Q101 4 782Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 2 000

Si SMD/SMT DPAK-3 (TO-252-3) P-Channel 1 Channel 60 V 15 A 50 mOhms - 20 V, 10 V 3 V 36 nC + 175 C 41 W Enhancement AEC-Q101 Reel, Cut Tape, MouseReel
Toshiba MOSFET 68W 1MHz Automotive; AEC-Q101 3 702Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 2 000

Si SMD/SMT DPAK-3 (TO-252-3) P-Channel 1 Channel 60 V 30 A 21.8 mOhms - 20 V, 10 V 3 V 80 nC + 175 C 68 W Enhancement AEC-Q101 Reel, Cut Tape
Toshiba MOSFET AUTO AEC-Q SS MOS P-ch Logic-Level Gate Drive VDSS:-40V IC:-7A PD:1.5W TSOP6F 5 911Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 3 000

Si SMD/SMT TSOP6F P-Channel 1 Channel 40 V 7 A 48 mOhms - 20 V, 10 V 2 V 24.2 nC + 150 C 1.5 W AEC-Q101 Reel, Cut Tape, MouseReel
Toshiba MOSFET 41W 1MHz Automotive; AEC-Q101 8 705Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 2 000

Si SMD/SMT DPAK-3 (TO-252-3) P-Channel 1 Channel 40 V 20 A 22.2 mOhms - 20 V, 10 V 3 V 37 nC + 175 C 41 W Enhancement AEC-Q101 Reel, Cut Tape
Toshiba MOSFET 100W 1MHz Automotive; AEC-Q101 7 031Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 2 000

Si SMD/SMT DPAK-3 (TO-252-3) P-Channel 1 Channel 60 V 60 A 11.2 mOhms - 20 V, 10 V 3 V 156 nC + 175 C 100 W Enhancement AEC-Q101 Reel, Cut Tape, MouseReel
Toshiba MOSFET 180W 1MHz Automotive; AEC-Q101 3 192Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 2 000

Si SMD/SMT DPAK-3 (TO-252-3) P-Channel 1 Channel 40 V 90 A 4.3 mOhms - 20 V, 10 V 2 V 172 nC + 175 C 180 W Enhancement AEC-Q101 Reel, Cut Tape
Toshiba MOSFET 90W 1MHz Automotive; AEC-Q101 833Ir noliktavā
2 000Paredzamais 16.03.2026
Min.: 1
Vair.: 1
Rullis: 2 000

Si SMD/SMT DPAK-3 (TO-252-3) P-Channel 1 Channel 60 V 50 A 13.8 mOhms - 20 V, 10 V 3 V 124 nC + 175 C 90 W Enhancement AEC-Q101 Reel, Cut Tape
Toshiba MOSFET AUTO AEC-Q SS MOS P-ch Low Voltage Gate Drive VDSS:-20V Ic:-0.8A SOT-723 6 583Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 8 000

Si SMD/SMT VESM-3 P-Channel 1 Channel 20 V 800 mA 480 mOhms - 8 V, 6 V 1 V 1.6 nC + 150 C 500 mW Enhancement AEC-Q101 Reel, Cut Tape, MouseReel
Toshiba MOSFET 170W 1MHz Automotive; AEC-Q101 1 589Ir noliktavā
5 000Paredzamais 02.03.2026
Min.: 1
Vair.: 1
Rullis: 5 000

Si SMD/SMT SOP-Advance-8 P-Channel 1 Channel 40 V 100 A 3.1 mOhms - 20 V, 10 V 2.1 V 230 nC + 175 C 170 W Enhancement AEC-Q101 Reel, Cut Tape, MouseReel
Toshiba MOSFET 100W 1MHz Automotive; AEC-Q101 2 781Ir noliktavā
5 000Paredzamais 15.05.2026
Min.: 1
Vair.: 1
Rullis: 5 000

Si SMD/SMT TSON-Advance-8 P-Channel 1 Channel 40 V 40 A 9.6 mOhms - 20 V, 10 V 2.1 V 64 nC - 55 C + 175 C 100 W Enhancement AEC-Q101 Reel, Cut Tape, MouseReel
Toshiba MOSFET 132W 1MHz Automotive; AEC-Q101
14 688Paredzamais 06.03.2026
Min.: 1
Vair.: 1
Rullis: 5 000

Si SMD/SMT SOP-Advance-8 P-Channel 1 Channel 40 V 60 A 4.7 mOhms - 20 V, 10 V 2.1 V 160 nC - 55 C + 175 C 132 W Enhancement AEC-Q101 Reel, Cut Tape, MouseReel
Toshiba MOSFET P-ch MOSFET, -30 V, -6.0 A, 0.042Ohma.10V, DFN2020B(WF)Automotive
9 000Pēc pasūtījuma
Min.: 1
Vair.: 1
Rullis: 3 000

Si SMD/SMT DFN2020B-6 P-Channel 1 Channel 30 V 24 A 144 mOhms - 12 V, 6 V 1.2 V 8.2 nC + 150 C 3.3 W Enhancement Reel, Cut Tape