1200V TRENCHSTOP™ IGBT6

Infineon Technologies 1200V TRENCHSTOP™ IGBT6 are designed to meet requirements of high efficiency, lower conduction losses, and switching losses. These TRENCHSTOP IGBT6 feature low gate charge, low Electromagnetic Interference (EMI), easy paralleling capability, high efficiency in hard switching, and resonant topologies. The TRENCHSTOP IGBT6 is released in 2 product families, low conduction losses optimized S6 series and improved switching losses H6 series. These IGBT6 are plug-and-play replacements of predecessor HighSpeed3 H3 IGBT. The TRENCHSTOP IGBT6 implement the trench and fieldstop technology copacked with soft and fast recovery anti-parallel diode. These 1200V TRENCHSTOP IGBT6 achieve easy paralleling capability due to positive temperature coefficient in VCEsat. Typical applications include industrial UPS, energy storage, three-level solar string inverter, and welding.

Rezultāti: 5
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Daudz. RoHS ECAD modelis Tehnoloģija
Iepakojums / korpusa
Montāžas veids
Konfigurācija
Kolektors - starotāja spriegums, VCEO maks.
Kolektora-starotāja piesātinājuma spriegums
Maksimālais kanāla starotāja spriegums
Nepārtraukta kolektora strāva pie 25 C
Pd - jaudas izkliede
Minimālā darba temperatūra
Maksimālā darba temperatūra
Sērija
Iepakojums
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Si TO-247-3 Through Hole Single 1.2 kV 1.9 V - 20 V, 20 V 30 A 200 W - 40 C + 175 C TRENCHSTOP IGBT6 Tube
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Si TO-247-4 Through Hole Single 1.2 kV 1.85 V - 20 V, 20 V 150 A 880 W - 40 C + 175 C Trenchstop IGBT6 Tube
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Si TO-247-4 Through Hole Single 1.2 kV 1.85 V - 20 V, 20 V 80 A 500 W - 40 C + 175 C Trenchstop IGBT6 Tube
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3 018Paredzamais 31.12.2026
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Si TO-247-3 Through Hole Single 1.2 kV 1.85 V - 20 V, 20 V 80 A 500 W - 40 C + 175 C Trenchstop IGBT6 Tube
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240Paredzamais 04.03.2026
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Si TO-247-3-46 Through Hole Single 1.2 kV 1.85 V - 20 V, 20 V 150 A 880 W - 40 C + 175 C Trenchstop IGBT6 Tube