4th Generation N-Channel SiC Power MOSFETs

ROHM Semiconductor 4th Generation N-Channel Silicon-Carbide (SiC) Power MOSFETs provide low on-resistances with improvements in the short-circuit withstand time. The 4th Generation SiC MOSFETs are easy to parallel and simple to drive. The MOSFETs feature fast switching speeds/reverse recovery, low switching losses, and a +175°C maximum operating temperature. The ROHM 4th Generation N-Channel SSiC Power MOSFETs support a 15V gate-source voltage that contributes to device power savings.

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Rezultāti: 21
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ROHM Semiconductor SiC MOSFET TO247 750V 105A N-CH SIC 402Ir noliktavā
Min.: 1
Vair.: 1

SiC MOSFETS SiC Through Hole TO-247-4 N-Channel
ROHM Semiconductor SiC MOSFET TO263 1.2KV 75A N-CH SIC 1 175Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 1 000

SiC MOSFETS SiC SMD/SMT TO-263-7 N-Channel
ROHM Semiconductor SiC MOSFET TO247 1.2KV 26A N-CH SIC 833Ir noliktavā
Min.: 1
Vair.: 1

SiC MOSFETS SiC Through Hole TO-247N-3 N-Channel
ROHM Semiconductor SiC MOSFET TO247 1.2KV 81A N-CH SIC 513Ir noliktavā
Min.: 1
Vair.: 1

SiC MOSFETS SiC Through Hole TO-247N-3 N-Channel
ROHM Semiconductor SiC MOSFET TO247 1.2KV 26A N-CH SIC 584Ir noliktavā
Min.: 1
Vair.: 1

SiC MOSFETS SiC Through Hole TO-247-4 N-Channel
ROHM Semiconductor SiC MOSFET TO263 750V 31A N-CH SIC 50Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 1 000

SiC MOSFETS SiC SMD/SMT TO-263-7 N-Channel
ROHM Semiconductor SiC MOSFET TO247 750V 34A N-CH SIC 810Ir noliktavā
Min.: 1
Vair.: 1

SiC MOSFETS SiC Through Hole TO-247N-3 N-Channel
ROHM Semiconductor SiC MOSFET TO263 1.2KV 40A N-CH SIC 690Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 1 000

SiC MOSFETS SiC SMD/SMT TO-263-7 N-Channel
ROHM Semiconductor SiC MOSFET TO247 750V 56A N-CH SIC 814Ir noliktavā
Min.: 1
Vair.: 1

SiC MOSFETS SiC Through Hole TO-247-4 N-Channel
ROHM Semiconductor MOSFET HSOP8 100V 33A P CHAN 2 433Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 2 500

MOSFETs Si SMD/SMT HSOP-8 P-Channel
ROHM Semiconductor SiC MOSFET TO247 750V 105A N-CH SIC 615Ir noliktavā
Min.: 1
Vair.: 1

SiC MOSFETS SiC Through Hole TO-247N-3 N-Channel
ROHM Semiconductor SiC MOSFET TO263 750V 98A N-CH SIC 334Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 1 000

SiC MOSFETS SiC SMD/SMT TO-263-7 N-Channel
ROHM Semiconductor SiC MOSFET TO263 750V 51A N-CH SIC 2 020Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 1 000

SiC MOSFETS SiC SMD/SMT TO-263-7 N-Channel
ROHM Semiconductor SiC MOSFET TO247 1.2KV 43A N-CH SIC 686Ir noliktavā
Min.: 1
Vair.: 1

SiC MOSFETS SiC Through Hole TO-247-4 N-Channel
ROHM Semiconductor SiC MOSFET TO263 750V 31A N-CH SIC 1 996Ir noliktavā
Min.: 1
Vair.: 1
Maks.: 100
Rullis: 1 000

SiC MOSFETS SiC SMD/SMT TO-263-7 N-Channel
ROHM Semiconductor SiC MOSFET TO263 1.2KV 24A N-CH SIC 1 488Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 1 000

SiC MOSFETS SiC SMD/SMT TO-263-7LA N-Channel
ROHM Semiconductor MOSFET Transistor, MOSFET Pch, -100V(Vdss), -2.0A(Id), (4.5V, 6.0V Drive) 4 215Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 3 000

MOSFETs Si SMD/SMT SOT-457T-6 P-Channel
ROHM Semiconductor SiC MOSFET TO247 1.2KV 81A N-CH SIC 6Ir noliktavā
450Paredzamais 18.06.2026
Min.: 1
Vair.: 1

SiC MOSFETS SiC Through Hole TO-247-4 N-Channel
ROHM Semiconductor SiC MOSFET TO247 750V 34A N-CH SIC 321Ir noliktavā
Min.: 1
Vair.: 1

SiC MOSFETS SiC Through Hole TO-247-4 N-Channel
ROHM Semiconductor MOSFET 40V 5.0A/3.5A Dual Nch+Pch, DFN2020-8D, Power MOSFET 2 130Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 3 000

MOSFETs Si SMD/SMT DFN-8 N-Channel, P-Channel
ROHM Semiconductor MOSFET 60V 3.5A/2.5A Dual Nch+Pch, DFN2020-8D, Power MOSFET 2 880Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 3 000

MOSFETs Si SMD/SMT DFN-8 N-Channel, P-Channel