M2 EliteSiC MOSFETs

onsemi M2 EliteSiC MOSFETs feature voltage options of 650V, 750V, and 1200V. The onsemi M2 MOSFETs come in various packages, including D2PAK7, H-PSOF8L, TDFN4 8x8, TO-247-3LD, and TO-247-4LD. The MOSFETs provide flexibility in design and implementation. Additionally, the M2 EliteSiC MOSFETs boast a maximum gate-to-source voltage of +22V/-8V, low RDS(on), and high short circuit withstand time (SCWT).

Rezultāti: 46
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Daudz. RoHS ECAD modelis Montāžas veids
Iepakojums / korpusa
Tranzistora polaritāte
Kanālu skaits
VDS - DS pārtraukuma spriegums
Id - nepārtraukta noplūdes strāva
RDS ieslēgts - noplūdes avota pretestība
VGS - kanāla-avota spriegums
VGS TH - kanāla-avota sliekšņa spriegums
Qg - kanāla lādiņš
Minimālā darba temperatūra
Maksimālā darba temperatūra
Pd - jaudas izkliede
Kanāla režīms
Kvalifikācija
Tirdzniecības nosaukums

onsemi SiC MOSFET SIC MOS TO247-3L 650V
Datu lapa
1 292Ir noliktavā
Min.: 1
Vair.: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 99 A 28.5 mOhms - 8 V, + 22 V 4.3 V 164 nC - 55 C + 175 C 348 W Enhancement EliteSiC
onsemi SiC MOSFET SIC MOS TO247-4L 650V
Datu lapa
428Ir noliktavā
Min.: 1
Vair.: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 99 A 28.5 mOhms - 8 V, + 22 V 4.3 V 164 nC - 55 C + 175 C 348 W Enhancement EliteSiC

onsemi SiC MOSFET SIC MOSFET 900V TO247-4L
Datu lapa
2 250Ir noliktavā
Min.: 1
Vair.: 1

Through Hole TO-247-4 N-Channel 1 Channel 900 V 118 A 28 mOhms - 8 V, + 22 V 4.3 V 196 nC - 55 C + 175 C 484 W Enhancement EliteSiC

onsemi SiC MOSFET SIC MOS TO247-4L 650V
Datu lapa
430Ir noliktavā
Min.: 1
Vair.: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 33 A 70 mOhms - 18 V, + 18 V 4.3 V 74 nC - 55 C + 175 C 88 W Enhancement EliteSiC
onsemi SiC MOSFET SIC MOS D2PAK-7L 650V
Datu lapa
1 285Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 800

SMD/SMT D2PAK-7 N-Channel 1 Channel 650 V 106 A 28.5 mOhms - 8 V, + 22 V 4.3 V 164 nC - 55 C + 175 C 395 W Enhancement EliteSiC

onsemi SiC MOSFET SIC MOS TO247-3L 650V
Datu lapa
1 812Ir noliktavā
Min.: 1
Vair.: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 66 A 50 mOhms - 8 V, + 22 V 4.3 V 105 nC - 55 C + 175 C 291 W Enhancement EliteSiC

onsemi SiC MOSFET SIC MOS TO247-4L 650V
Datu lapa
776Ir noliktavā
Min.: 1
Vair.: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 38 A 85 mOhms - 8 V, + 22 V 4.3 V 61 nC - 55 C + 175 C 148 W Enhancement EliteSiC
onsemi SiC MOSFET SIC MOS 60MOHM 900V
Datu lapa
1 276Ir noliktavā
MouseReel ir pieejams
Min.: 1
Vair.: 1
Rullis: 800

SMD/SMT D2PAK-7 N-Channel 1 Channel 900 V 44 A 84 mOhms - 8 V, + 22 V 4.3 V 88 nC - 55 C + 175 C 211 W Enhancement EliteSiC

onsemi SiC MOSFET 60MOHM 900V
Datu lapa
1 219Ir noliktavā
Min.: 1
Vair.: 1

Through Hole TO-247-3 N-Channel 1 Channel 900 V 46 A 84 mOhms - 8 V, + 22 V 4.3 V 87 nC - 55 C + 175 C 221 W Enhancement EliteSiC

onsemi SiC MOSFET SIC MOS TO247-3L 650V
Datu lapa
569Ir noliktavā
Min.: 1
Vair.: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 47 A 70 mOhms - 8 V, + 22 V 4.3 V 74 nC - 55 C + 175 C 176 W Enhancement EliteSiC
onsemi SiC MOSFET SIC MOS D2PAK-7L 650V
Datu lapa
3 923Ir noliktavā
MouseReel ir pieejams
Min.: 1
Vair.: 1
Rullis: 800
SMD/SMT D2PAK-7 N-Channel 1 Channel 650 V 145 A 18 mOhms - 8 V, + 22 V 4.3 V 283 nC - 55 C + 175 C 250 W Enhancement EliteSiC

onsemi SiC MOSFET SIC MOS TO247-4L 650V
Datu lapa
1 595Ir noliktavā
Min.: 1
Vair.: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 55 A 50 mOhms - 8 V, + 22 V 4.3 V 105 nC - 55 C + 175 C 187 W Enhancement EliteSiC
onsemi SiC MOSFET SIC MOS 20MOHM 900V
Datu lapa
1 861Ir noliktavā
MouseReel ir pieejams
Min.: 1
Vair.: 1
Rullis: 800

SMD/SMT D2PAK-7 N-Channel 1 Channel 900 V 112 A 28 mOhms - 8 V, + 22 V 4.3 V 200 nC - 55 C + 175 C 477 W Enhancement EliteSiC

onsemi SiC MOSFET 60MOHM
Datu lapa
265Ir noliktavā
Min.: 1
Vair.: 1
Through Hole TO-247-3 N-Channel 1 Channel 900 V 46 A 84 mOhms - 8 V, + 22 V 4.3 V 87 nC - 55 C + 175 C 221 W Enhancement AEC-Q101 EliteSiC

onsemi SiC MOSFET 20MOHM 900V
Datu lapa
348Ir noliktavā
Min.: 1
Vair.: 1

Through Hole TO-247-3 N-Channel 1 Channel 900 V 118 A 28 mOhms - 8 V, + 22 V 4.3 V 196 nC - 55 C + 175 C 503 W Enhancement AEC-Q101 EliteSiC
onsemi SiC MOSFET 60MOHM
Datu lapa
1 003Ir noliktavā
MouseReel ir pieejams
Min.: 1
Vair.: 1
Rullis: 800
SMD/SMT D2PAK-7 N-Channel 1 Channel 900 V 44 A 84 mOhms - 8 V, + 22 V 4.3 V 88 nC - 55 C + 175 C 211 W Enhancement AEC-Q101 EliteSiC
onsemi SiC MOSFET SIC MOS D2PAK-7L 650V
Datu lapa
828Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 800

SMD/SMT D2PAK-7 N-Channel 1 Channel 650 V 62 A 50 mOhms - 8 V, + 22 V 4.3 V 105 nC - 55 C + 175 C 121 W Enhancement EliteSiC

onsemi SiC MOSFET SIC MOSFET 900V TO247-4L 20MOHM
Datu lapa
450Ir noliktavā
Min.: 1
Vair.: 1

TO-247-4 EliteSiC

onsemi SiC MOSFET SIC MOSFET 900V TO247-4L
Datu lapa
314Ir noliktavā
Min.: 1
Vair.: 1

Through Hole TO-247-4 N-Channel 1 Channel 900 V 46 A 84 mOhms - 8 V, + 22 V 4.3 V 87 nC - 55 C + 175 C 221 W Enhancement EliteSiC
onsemi SiC MOSFET SIC MOS D2PAK-7L 650V
Datu lapa
428Ir noliktavā
MouseReel ir pieejams
Min.: 1
Vair.: 1
Rullis: 800

SMD/SMT D2PAK-7 N-Channel 1 Channel 650 V 62 A 50 mOhms - 8 V, + 22 V 4.3 V 105 nC - 55 C + 175 C 242 W Enhancement EliteSiC

onsemi SiC MOSFET SIC MOS TO247-4L 650V
Datu lapa
434Ir noliktavā
Min.: 1
Vair.: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 31 A 105 mOhms - 5 V, + 18 V 4.3 V 50 nC - 55 C + 175 C 64 W Enhancement EliteSiC

onsemi SiC MOSFET SIC MOS TO247-3L 650V
Datu lapa
400Ir noliktavā
Min.: 1
Vair.: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 163 A 12 mOhms - 8 V, + 22 V 4.3 V 283 nC - 55 C + 175 C 643 W Enhancement EliteSiC

onsemi SiC MOSFET SIC MOS TO247-3L 650V
Datu lapa
448Ir noliktavā
Min.: 1
Vair.: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 99 A 19 mOhms - 8 V, + 22 V 4.3 V 164 nC - 55 C + 175 C 348 W Enhancement EliteSiC

onsemi SiC MOSFET SIC MOS TO247-3L 650V
Datu lapa
445Ir noliktavā
Min.: 1
Vair.: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 47 A 44 mOhms - 8 V, + 22 V 4.3 V 74 nC - 55 C + 175 C 176 W Enhancement EliteSiC
onsemi SiC MOSFET SIC MOS D2PAK-7L 650V
Datu lapa
334Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 800

SMD/SMT D2PAK-7 N-Channel 1 Channel 650 V 46 A 70 mOhms - 8 V, + 22 V 4.3 V 74 nC - 55 C + 175 C 170 W Enhancement EliteSiC