TO-220ACG SiC Schottky Barrier Diodes

ROHM Semiconductor TO-220ACG Silicon Carbide (SiC) Schottky Barrier Diodes (SBD) feature a reverse voltage range of 650V to 1200V and a continuous reverse current range of 1.2µA to 20.0µA. SiC technology enables these devices to maintain a low capacitive charge (QC), reducing switching loss while enabling high-speed switching operation. In addition, unlike Si-based fast-recovery diodes, where the reverse recovery time increases along with temperature, SiC devices maintain constant characteristics, resulting in better performance.

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Daudz. RoHS ECAD modelis Montāžas veids
Iepakojums / korpusa
Konfigurācija
If - tiešā strāva
Vrrm - atkārtots pretspriegums
Vf - tiešais spriegums
Ifsm - tiešā impulsstrāva
IR - pretstrāva
Maksimālā darba temperatūra
Iepakojums
ROHM Semiconductor SiC Schottky Diodes RECT 1.2KV 15A RDL SIC SKY
Datu lapa
2 707Ir noliktavā
Min.: 1
Vair.: 1

Through Hole TO-220ACG-2 Single 15 A 1.2 kV 1.6 V 62 A 300 uA + 175 C Tube
ROHM Semiconductor SiC Schottky Diodes RECT 1.2KV 5A RDL SIC SKY
Datu lapa
3 968Ir noliktavā
Min.: 1
Vair.: 1

Through Hole TO-220ACG-2 Single 5 A 1.2 kV 1.6 V 23 A 100 uA + 175 C Tube
ROHM Semiconductor SiC Schottky Diodes SiC Schottky Barrier Diode, 650V, 15A, 2nd Gen
Datu lapa
6 417Ir noliktavā
Min.: 1
Vair.: 1

Through Hole TO-220ACG-2 Single 15 A 650 V 1.55 V 52 A 300 uA + 175 C Tube
ROHM Semiconductor SiC Schottky Diodes SiC Schottky Barrier Diode, 650V, 8A, 2nd Gen
Datu lapa
1 701Ir noliktavā
Min.: 1
Vair.: 1

Through Hole TO-220ACG-2 Single 8 A 650 V 1.55 V 30 A 160 uA + 175 C Tube
ROHM Semiconductor SiC Schottky Diodes RECT 1.2KV 10A RDL SIC SKY
Datu lapa
752Ir noliktavā
Min.: 1
Vair.: 1

Through Hole TO-220ACG-2 Single 10 A 1.2 kV 1.6 V 42 A 200 uA + 175 C Tube
ROHM Semiconductor SiC Schottky Diodes RECT 1.2KV 20A RDL SIC SKY
Datu lapa
1 391Ir noliktavā
Min.: 1
Vair.: 1

Through Hole TO-220ACG-2 Single 20 A 1.2 kV 1.6 V 79 A 400 uA + 175 C Tube
ROHM Semiconductor SiC Schottky Diodes SiC Schottky Barrier Diode, 650V, 10A, 2nd Gen
Datu lapa
770Ir noliktavā
Min.: 1
Vair.: 1

Through Hole TO-220ACG-2 Single 10 A 650 V 1.55 V 38 A 200 uA + 175 C Tube
ROHM Semiconductor SiC Schottky Diodes SiC Schottky Barrier Diode, 650V, 12A, 2nd Gen
Datu lapa
820Ir noliktavā
Min.: 1
Vair.: 1

Through Hole TO-220ACG-2 Single 12 A 650 V 1.55 V 43 A 240 uA + 175 C Tube
ROHM Semiconductor SiC Schottky Diodes SiC Schottky Barrier Diode, 650V, 20A, 2nd Gen
Datu lapa
1Ir noliktavā
Min.: 1
Vair.: 1

Through Hole TO-220ACG-2 Single 20 A 650 V 1.55 V 68 A 400 uA + 175 C Tube
ROHM Semiconductor SiC Schottky Diodes SiC Schottky Barrier Diode, 650V, 6A, 2nd Gen
Datu lapa
Noliktavā neesošas preces izpildes laiks 21 Nedēļas

Through Hole TO-220ACG-2 Single 6 A 650 V 1.55 V 23 A 120 uA + 175 C Tube