600V MDmesh™ DM6 Super-junction MOSFETs

STMicroelectronics 600V MDmesh™ DM6 Super-junction MOSFETs are optimized for ZVS, full-bridge, and half-bridge topologies. With a breakdown voltage of 600V, the MDmesh DM6 Power MOSFETs combine an optimized capacitance profile and lifetime killing process. The STMicroelectronics 600V MDmesh DM6 Super-junction MOSFETs offer a low gate charge (Qg), very low recovery charge (Qrr), low recovery time (trr), and an excellent RDS(on) per area.

Rezultāti: 10
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Daudz. RoHS ECAD modelis Tehnoloģija
Montāžas veids
Iepakojums / korpusa
Tranzistora polaritāte
Kanālu skaits
VDS - DS pārtraukuma spriegums
Id - nepārtraukta noplūdes strāva
RDS ieslēgts - noplūdes avota pretestība
VGS - kanāla-avota spriegums
VGS TH - kanāla-avota sliekšņa spriegums
Qg - kanāla lādiņš
Minimālā darba temperatūra
Maksimālā darba temperatūra
Pd - jaudas izkliede
Kanāla režīms
Tirdzniecības nosaukums
Iepakojums
STMicroelectronics MOSFET N-channel 600 V, 60 mOhm typ., 46 A MDmesh DM6 Power MOSFET
Datu lapa
508Ir noliktavā
Min.: 1
Vair.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 38 A 71 mOhms - 25 V, 25 V 3.25 V 54 nC - 55 C + 150 C 250 W Enhancement MDmesh Tube
STMicroelectronics MOSFET N-channel 600 V, 0.094 Ohm typ., 25 A MDmesh DM6 Power MOSFET in a PowerFLAT 8x8
Datu lapa
2 682Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 3 000

Si SMD/SMT PowerFLAT-8x8-5 N-Channel 1 Channel 600 V 25 A 110 mOhms - 25 V, 25 V 3.25 V 44 nC - 55 C + 150 C 160 W Enhancement MDmesh Reel, Cut Tape
STMicroelectronics MOSFET N-channel 600 V, 60 mOhm typ., 46 A MDmesh DM6 Power MOSFET in a TO-247 long lea
Datu lapa
589Ir noliktavā
Min.: 1
Vair.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 38 A 71 mOhms - 25 V, 25 V 3.25 V 54 nC - 55 C + 150 C 250 W Enhancement MDmesh Tube

STMicroelectronics MOSFET N-channel 600 V, 165 mOhm typ., 18 A MDmesh DM6 Power MOSFET in a TO-220 package
Datu lapa
486Ir noliktavā
Min.: 1
Vair.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 18 A 195 mOhms - 25 V, 25 V 3.25 V 24 nC - 55 C + 150 C 130 W Enhancement MDmesh Tube
STMicroelectronics MOSFET N-channel 600 V, 32 mOhm typ., 72 A MDmesh DM6 Power MOSFET in a TO-247 package
Datu lapa
290Ir noliktavā
Min.: 1
Vair.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 72 A 36 mOhms - 25 V, 25 V 3.25 V 117 nC - 55 C + 150 C 446 W Enhancement MDmesh Tube
STMicroelectronics MOSFET N-channel 600 V, 36 mOhm typ., 62 A MDmesh DM6 Power MOSFET in a TO-247 package
Datu lapa
101Ir noliktavā
Min.: 1
Vair.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 62 A 42 mOhms - 25 V, 25 V 3.25 V 99 nC - 55 C + 150 C 390 W Enhancement MDmesh Tube
STMicroelectronics MOSFET N-channel 600 V, 165 mOhm typ., 18 A MDmesh DM6 Power MOSFET in TO-220FP package
Datu lapa
Noliktavā neesošas preces izpildes laiks 14 Nedēļas
Min.: 1 000
Vair.: 1 000

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 18 A 195 mOhms - 25 V, 25 V 3.25 V 24 nC - 55 C + 150 C 30 W Enhancement MDmesh Tube
STMicroelectronics MOSFET N-channel 600 V, 32 mOhm typ., 72 A MDmesh M6 Power MOSFET in a TO247-4 package
Datu lapa
Noliktavā neesošas preces izpildes laiks 18 Nedēļas
Min.: 600
Vair.: 600

Si Through Hole TO-247-4 N-Channel 1 Channel 600 V 72 A 36 mOhms - 25 V, 25 V 3.25 V 106 nC - 55 C + 150 C 446 W Enhancement MDmesh Tube
STMicroelectronics MOSFET N-channel 600 V, 35 mOhm typ., 63 A MDmesh M6 Power MOSFET in a TO-247 long lead
Datu lapa
Noliktavā neesošas preces izpildes laiks 18 Nedēļas
Min.: 600
Vair.: 600

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 63 A 41 mOhms - 25 V, 25 V 3.25 V 106 nC - 55 C + 150 C 390 W Enhancement MDmesh Tube
STMicroelectronics MOSFET N-channel 600 V, 36 mOhm typ., 62 A MDmesh DM6 Power MOSFET in a TO-247 long lea
Datu lapa
Noliktavā neesošas preces izpildes laiks 18 Nedēļas
Min.: 600
Vair.: 600

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 62 A 42 mOhms - 25 V, 25 V 3.25 V 99 nC - 55 C + 150 C 390 W Enhancement MDmesh Tube