750V Discrete Silicon Carbide MOSFETs

Wolfspeed 750V Discrete Silicon Carbide MOSFETs feature higher breakdown voltage, offering increased design margin to support customer applications. These MOSFETs enable high system power density with a low-profile design in the TO-247-4 LP package and surface mount technology in the TO-263-7 XL package options. This enables designers to select the right part for their application. The Wolfspeed 750V MOSFETs facilitate efficient power conversion in diverse power systems. These systems include high-performance industrial power supplies, energy storage systems in Electrical Vehicle (EV) converters, and EV HVAC motor drives.

Rezultāti: 11
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Apraksts Datu lapa Pieejamība Cenas noteikšana (EUR) Atlasiet rezultātus tabulā pēc vienības cenas, pamatojoties uz daudzumu.
Daudz. RoHS ECAD modelis Montāžas veids
Iepakojums / korpusa
Tranzistora polaritāte
Kanālu skaits
VDS - DS pārtraukuma spriegums
Id - nepārtraukta noplūdes strāva
RDS ieslēgts - noplūdes avota pretestība
VGS - kanāla-avota spriegums
VGS TH - kanāla-avota sliekšņa spriegums
Qg - kanāla lādiņš
Minimālā darba temperatūra
Maksimālā darba temperatūra
Pd - jaudas izkliede
Kanāla režīms
Wolfspeed SiC MOSFET SiC, MOSFET, 15mohm, 750V, TO-263-7 XL T&R, Automotive, Gen4
Datu lapa
1 199Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 800

SMD/SMT TO-263-7XL N-Channel 1 Channel 750 V 156 A 15 mOhms - 8 V, + 19 V 3.8 V 180 nC - 55 C + 175 C 554 W Enhancement
Wolfspeed SiC MOSFET SiC, MOSFET, 25mohm, 750V, TO-247-4 LP, Industrial
Datu lapa
261Ir noliktavā
Min.: 1
Vair.: 1

Through Hole TO-247-4 N-Channel 1 Channel 750 V 80 A 21 mOhms - 8 V, + 19 V 2.6 V 119 nC - 40 C + 175 C 262 W Enhancement
Wolfspeed SiC MOSFET SiC, MOSFET, 45mohm, 750V, TO-247-4 LP, Industrial
Datu lapa
423Ir noliktavā
Min.: 1
Vair.: 1

Through Hole TO-247-4 N-Channel 1 Channel 750 V 42 A 60 mOhms - 8 V, + 19 V 2.6 V 65 nC - 40 C + 175 C 139 W Enhancement
Wolfspeed SiC MOSFET SiC, MOSFET, 60mohm, 750V, TO-247-4 LP, Industrial
Datu lapa
380Ir noliktavā
Min.: 1
Vair.: 1

Through Hole TO-247-4 N-Channel 1 Channel 750 V 35 A 78 mOhms - 8 V, + 19 V 2.6 V 52 nC - 40 C + 175 C 126 W Enhancement
Wolfspeed SiC MOSFET SiC, MOSFET, 15mohm, 750V, TO-247-4, Automotive, Gen4
Datu lapa
174Ir noliktavā
Min.: 1
Vair.: 1

Through Hole TO-247-4 N-Channel 1 Channel 750 V 128 A 15 mOhms - 8 V, + 19 V 3.8 V 191 nC - 40 C + 175 C 372 W Enhancement
Wolfspeed SiC MOSFET SiC, MOSFET, 25mohm, 750V, TO-263-7 XL T&R, Automotive, Gen4
Datu lapa
654Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 800

SMD/SMT TO-263-7XL N-Channel 1 Channel 750 V 84 A 25 mOhms - 8 V, + 19 V 3.8 V 114 nC - 55 C + 175 C 281 W Enhancement
Wolfspeed SiC MOSFET SiC, MOSFET, 25mohm, 750V, TO-247-4, Automotive, Gen4
Datu lapa
167Ir noliktavā
Min.: 1
Vair.: 1

Through Hole TO-247-4 N-Channel 1 Channel 750 V 80 A 25 mOhms - 8 V, + 19 V 3.8 V 119 nC - 55 C + 175 C 262 W Enhancement
Wolfspeed SiC MOSFET SiC, MOSFET, 45mohm, 750V, TO-263-7 XL T&R, Automotive, Gen4
Datu lapa
700Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 800

SMD/SMT TO-263-7XL N-Channel 1 Channel 750 V 46 A 45 mOhms - 8 V, + 19 V 3.8 V 62 nC - 55 C + 175 C 171 W Enhancement
Wolfspeed SiC MOSFET SiC, MOSFET, 45mohm, 750V, TO-247-4LP, Automotive, Gen4
Datu lapa
267Ir noliktavā
Min.: 1
Vair.: 1

Through Hole TO-247-4LP N-Channel 1 Channel 750 V 42 A 45 mOhms - 8 V, + 19 V 3.8 V 65 nC - 55 C + 175 C 139 W Enhancement
Wolfspeed SiC MOSFET SiC, MOSFET, 60mohm, 750V, TO-263-7 XL T&R, Automotive, Gen4
Datu lapa
636Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 800

SMD/SMT TO-263-7XL N-Channel 1 Channel 750 V 156 A 60 mOhms - 8 V, + 19 V 3.8 V 180 nC - 55 C + 175 C 554 W Enhancement
Wolfspeed SiC MOSFET SiC, MOSFET, 60mohm, 750V, TO-247-4LP, Automotive, Gen4
Datu lapa
345Ir noliktavā
Min.: 1
Vair.: 1

Through Hole TO-247-4LP N-Channel 1 Channel 750 V 35 A 60 mOhms - 8 V, + 19 V 3.8 V 52 nC - 55 C + 175 C 126 W Enhancement