STDRIVEG211 Half-Bridge Gate Drivers

STMicroelectronics STDRIVEG211 Half-Bridge Gate Drivers are designed for N‑channel enhancement mode GaN, and the high-side driver section can withstand a voltage rail up to 220V. These drivers feature high current capability, short propagation delay with excellent delay matching, and integrated LDOs. This makes them optimized for driving high-speed GaN. The STDRIVEG211 half-bridge gate drivers feature supply UVLOs tailored to hard switching applications, interlocking to avoid cross-conduction conditions, and an overcurrent comparator with SmartSD. These drivers offer an extended range for input pins that allows easy interfacing with controllers. A standby pin allows for reducing the power consumption during inactive periods or burst mode. Applications include solar micro inverters, Class D audio amplifiers, E-bikes, LED lighting, USB-C, power tools, and robotics.

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STMicroelectronics Kanālu draiveri High voltage and high-speed half-bridge gate driver for GaN power switches 220V 674Ir noliktavā
Min.: 1
Vair.: 1

Gate Drivers Half-Bridge SMD/SMT QFN-18 2 Driver 3 Output 1 A, 2.4 A 3.3 V 20 V Inverting 22 ns 11 ns - 40 C + 125 C Tray
STMicroelectronics Kanālu draiveri High voltage and high-speed half-bridge gate driver for GaN power switches 220V
700Pēc pasūtījuma
Min.: 1
Vair.: 1
Rullis: 3 000

Gate Drivers Half-Bridge SMD/SMT QFN-18 2 Driver 2 Output 10.7 V 18 V Inverting, Non-Inverting 22 ns 11 ns - 40 C + 125 C Reel, Cut Tape, MouseReel