SigmaQuad-IVe ECCRAMs

GSI Technology SigmaQuad-IVe ECCRAMs are the Separate I/O half of the SigmaQuad-IVe/SigmaDDR-IVe family of high performance ECCRAMs. The devices are similar to GSI's third generation of networking SRAMs but offer several new features that help enable significantly higher performance. GSI's ECCRAMs implement an ECC algorithm that detects and corrects all single-bit memory errors, including those induced by SER events. These events include cosmic rays, alpha particles, etc. The resulting Soft Error Rate of these devices is anticipated to be <0.002 FITs/Mb. A 5-order-of-magnitude improvement over comparable SRAMs with no on-chip ECC, which typically have an SER of 200FITs/Mb or more.

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GSI Technology SRAM 1.2/1.25V 8M x 18 144M
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144 Mbit 8 M x 18 1.066 GHz Parallel 1.35 V 1.2 V 2.3 A - 40 C + 100 C SMD/SMT BGA-260 Tray
GSI Technology SRAM 1.2/1.25V 8M x 18 144M
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144 Mbit 8 M x 18 1.2 GHz Parallel 1.35 V 1.2 V 2.5 A - 40 C + 100 C SMD/SMT BGA-260 Tray
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144 Mbit 8 M x 18 800 MHz Parallel 1.35 V 1.2 V 2.05 A - 40 C + 100 C SMD/SMT BGA-260 Tray
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144 Mbit 8 M x 18 1.2 ns 933 MHz Parallel 1.35 V 1.25 V 2.25 A - 40 C + 100 C SMD/SMT BGA-260 Tray
GSI Technology SRAM 1.2/1.25V 4M x 36 144M
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144 Mbit 4 M x 36 1.066 GHz Parallel 1.35 V 1.2 V 3 A - 40 C + 100 C SMD/SMT BGA-260 Tray
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144 Mbit 4 M x 36 1.2 GHz Parallel 1.35 V 1.2 V 3.2 A - 40 C + 100 C SMD/SMT BGA-260 Tray
GSI Technology SRAM 1.2/1.25V 4M x 36 144M
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144 Mbit 4 M x 36 800 MHz Parallel 1.35 V 1.2 V 2.7 A - 40 C + 100 C SMD/SMT BGA-260 Tray
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144 Mbit 4 M x 36 1.2 ns 933 MHz Parallel 1.35 V 1.25 V 2.95 A - 40 C + 100 C SMD/SMT BGA-260 Tray
GSI Technology SRAM 1.2/1.25V 8M x 18 144M
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144 Mbit 8 M x 18 1.066 GHz Parallel 1.35 V 1.2 V 2.3 A - 40 C + 100 C SMD/SMT BGA-260 Tray
GSI Technology SRAM 1.2/1.25V 8M x 18 144M
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144 Mbit 8 M x 18 1.2 GHz Parallel 1.35 V 1.2 V 2.5 A - 40 C + 100 C SMD/SMT BGA-260 Tray
GSI Technology SRAM 1.2/1.25V 8M x 18 144M
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144 Mbit 8 M x 18 800 MHz Parallel 1.35 V 1.2 V 2.05 A - 40 C + 100 C SMD/SMT BGA-260 Tray
GSI Technology SRAM 1.2/1.25V 8M x 18 144M
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144 Mbit 8 M x 18 1.2 ns 933 MHz Parallel 1.35 V 1.25 V 2.25 A - 40 C + 100 C SMD/SMT BGA-260 Tray
GSI Technology SRAM 1.2/1.25V 4M x 36 144M
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144 Mbit 4 M x 36 1.066 GHz Parallel 1.35 V 1.2 V 3 A - 40 C + 100 C SMD/SMT BGA-260 Tray
GSI Technology SRAM 1.2/1.25V 4M x 36 144M
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144 Mbit 4 M x 36 1.2 GHz Parallel 1.35 V 1.2 V 3.2 A - 40 C + 100 C SMD/SMT BGA-260 Tray
GSI Technology SRAM 1.2/1.25V 4M x 36 144M
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144 Mbit 4 M x 36 800 MHz Parallel 1.35 V 1.2 V 2.7 A - 40 C + 100 C SMD/SMT BGA-260 Tray
GSI Technology SRAM 1.2/1.25V 4M x 36 144M
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144 Mbit 4 M x 36 1.2 ns 933 MHz Parallel 1.35 V 1.25 V 2.95 A - 40 C + 100 C SMD/SMT BGA-260 Tray
GSI Technology SRAM 1.2/1.25V 8M x 18 144M
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144 Mbit 8 M x 18 1.066 GHz Parallel 1.35 V 1.2 V 2.3 A 0 C + 85 C SMD/SMT BGA-260 Tray
GSI Technology SRAM 1.2/1.25V 8M x 18 144M
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144 Mbit 8 M x 18 1.2 GHz Parallel 1.35 V 1.2 V 2.5 A 0 C + 85 C SMD/SMT BGA-260 Tray
GSI Technology SRAM 1.2/1.25V 8M x 18 144M
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144 Mbit 8 M x 18 1.333 GHz Parallel 1.35 V 1.2 V 2.7 A 0 C + 85 C SMD/SMT BGA-260 Tray
GSI Technology SRAM 1.2/1.25V 8M x 18 144M
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144 Mbit 8 M x 18 800 MHz Parallel 1.35 V 1.2 V 2.05 A 0 C + 85 C SMD/SMT BGA-260 Tray
GSI Technology SRAM 1.2/1.25V 8M x 18 144M
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144 Mbit 8 M x 18 933 MHz Parallel 1.35 V 1.2 V 2.25 A 0 C + 85 C SMD/SMT BGA-260 Tray
GSI Technology SRAM 1.2/1.25V 4M x 36 144M
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144 Mbit 4 M x 36 1.066 GHz Parallel 1.35 V 1.2 V 3 A 0 C + 85 C SMD/SMT BGA-260 Tray
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144 Mbit 4 M x 36 1.2 GHz Parallel 1.35 V 1.2 V 3.2 A 0 C + 85 C SMD/SMT BGA-260 Tray
GSI Technology SRAM 1.2/1.25V 4M x 36 144M
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144 Mbit 4 M x 36 1.333 GHz Parallel 1.35 V 1.2 V 3.4 A 0 C + 85 C SMD/SMT BGA-260 Tray
GSI Technology SRAM 1.2/1.25V 4M x 36 144M
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144 Mbit 4 M x 36 800 MHz Parallel 1.35 V 1.2 V 2.7 A 0 C + 85 C SMD/SMT BGA-260 Tray