NSF0x120L4A0 N-Channel MOSFETs

Nexperia NSF0x120L4A0 N-Channel MOSFETs are silicon carbide (SiC)-based, 1200V power MOSFETs in well-established 4-pin TO-247 plastic packages. These MOSFETs exhibit excellent drain-source on-state resistance temperature stability. The series offers low switching losses, fast reverse recovery, and fast switching speeds. The Nexperia MOSFETs provide faster commutation and improved switching due to the additional Kelvin source pin. The NSF0x120L4A0 modules feature a 22V maximum gate-source voltage, +175°C maximum junction temperature, and EU RoHS compliance. Typical applications include electric vehicle (EV) charging infrastructure, photovoltaic inverters, switched mode power supplies (SMPS), uninterruptable power supply, and motor drives.

Rezultāti: 2
Atlasīt Attēls Detaļas Nr.
 Raž.
Apraksts Datu lapa Pieejamība Cenas noteikšana (EUR) Atlasiet rezultātus tabulā pēc vienības cenas, pamatojoties uz daudzumu.
Daudz. RoHS ECAD modelis Montāžas veids
Iepakojums / korpusa
Tranzistora polaritāte
Kanālu skaits
VDS - DS pārtraukuma spriegums
Id - nepārtraukta noplūdes strāva
RDS ieslēgts - noplūdes avota pretestība
VGS - kanāla-avota spriegums
VGS TH - kanāla-avota sliekšņa spriegums
Qg - kanāla lādiņš
Minimālā darba temperatūra
Maksimālā darba temperatūra
Pd - jaudas izkliede
Kanāla režīms

Nexperia SiC MOSFET NSF040120L4A0/SOT8071/TO247-4L
Datu lapa
330Ir noliktavā
Min.: 1
Vair.: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 65 A 60 mOhms - 10 V, + 22 V 2.9 V 95 nC - 55 C + 175 C 306 W Enhancement
Nexperia SiC MOSFET NSF080120L4A0/SOT8071/TO247-4L
Datu lapa
390Ir noliktavā
Min.: 1
Vair.: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 35 A 120 mOhms - 10 V, + 22 V 2.9 V 52 nC - 55 C + 175 C 183 W Enhancement