750V UJ4C/SC SiC FETs in D2PAK-7L Package

onsemi 750V UJ4C/SC SiC FETs in a D2PAK-7L Package are available in multiple on-resistance options from 9mΩ to 60mΩ. Leveraging a unique cascode SiC FET technology in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET, these devices deliver a superior R_DS x Area Figure of Merit, resulting in low conduction losses in a small die. The D2PAK-7L package provides reduced inductance from compact internal connection loops, which, along with the included Kelvin source connection, results in low switching loss, enabling higher frequency operation and improved system power density. Five parallel gull-wing source connections allow low inductance and high current usage. The silver-sinter die-attach offers low thermal resistance for maximum heat extraction on standard PCBs and IMS substrates with liquid cooling.