SiC MOSFETs

Littelfuse SiC MOSFETs are optimized for high-frequency, high-efficiency applications. These robust SiC MOSFETs offer low gate charges, low output capacitance, and low gate resistance for high-frequency switching. These devices also feature extremely low drain-source on-state resistance. The low gate charge and on-resistance of these MOSFETs translate into lower conduction and switching losses, respectively. Littelfuse offers in-house designed, developed, and manufactured SiC MOSFETs with extremely low gate charge and output capacitance, industry-leading performance, and ruggedness at all temperatures. Littelfuse SiC MOSFETs are available in a range of varieties, including 1200V in 80mΩ, 120mΩ, and 160mΩ versions.

Diskrēto pusvadītāju veidi

Mainīt kategorijas skatu
Rezultāti: 7
Atlasīt Attēls Detaļas Nr. Raž. Apraksts Datu lapa Pieejamība Cenas noteikšana (EUR) Atlasiet rezultātus tabulā pēc vienības cenas, pamatojoties uz daudzumu. Daudz. RoHS Produkta tips Tehnoloģija Montāžas veids Iepakojums / korpusa

IXYS SiC MOSFET 1200V 80mOhm SiC MOSFET 4 196Ir noliktavā
Min.: 1
Vair.: 1

SiC MOSFETS SiC Through Hole TO-247-3
IXYS SiC MOSFET TO247 1.7KV 4.4A N-CH SIC 1 927Ir noliktavā
Min.: 1
Vair.: 1

SiC MOSFETS SiC Through Hole TO-247-3
Littelfuse SiC Schottky Diodes RECT 650V 20A SM SCHOTTKY 713Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 800

SiC Schottky Diodes SMD/SMT D2PAK-2 (TO-263-2)

IXYS SiC MOSFET 1200 V 160 mOhm SiC Mosfet 548Ir noliktavā
Min.: 1
Vair.: 1

SiC MOSFETS SiC Through Hole TO-247-3

Littelfuse SiC Schottky Diodes RECT 1.2KV 40A SM SCHOTTKY 74Ir noliktavā
Min.: 1
Vair.: 1

SiC Schottky Diodes Screw Mount SOT-227B

Littelfuse SiC Schottky Diodes RECT 1.2KV 120A SM SCHOTTKY
99Paredzamais 25.08.2026
Min.: 1
Vair.: 1

SiC Schottky Diodes Screw Mount SOT-227B
Littelfuse SiC Schottky Diodes 650V/8A SiC SBD?TO263-2LAEC-Q101 Nav noliktavā
Min.: 800
Vair.: 800

SiC Schottky Diodes SMD/SMT D2PAK-2 (TO-263-2)