Gen-3 Fast (G3F) SiC MOSFETs

GeneSiC Semiconductor Gen-3 Fast (G3F) SiC MOSFETs are developed using a proprietary trench-assisted planar technology for high-speed performance. The technology enables an extremely low RDS(ON) increase vs. temperature, which results in low power losses across the full operating range. Available in 650V and 1200V variants, these MOSFETs are optimized for faster switching speeds, higher efficiency, and increased power density. GeneSiC G3F SiC MOSFETs offer high-speed, cool-running performance, with up to a +25°C lower case temperature. The thermally enhanced TOLL package for the 650V variant provides space and thermal management advantages. The 1200V models offer the power needed for next-generation EVs and industrial applications. Typical applications include AI data centers, EV roadside superchargers, onboard chargers (OBC), energy storage systems (ESS), and solar power solutions.

Rezultāti: 29
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Daudz. RoHS ECAD modelis Montāžas veids
Iepakojums / korpusa
Tranzistora polaritāte
Kanālu skaits
VDS - DS pārtraukuma spriegums
Id - nepārtraukta noplūdes strāva
RDS ieslēgts - noplūdes avota pretestība
Kanāla režīms
GeneSiC Semiconductor SiC MOSFET 1200V 18mohm TO-263-7 G3F SiC MOSFET 790Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 800

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 18 mOhms Enhancement
GeneSiC Semiconductor SiC MOSFET 650V 20mohm TO-LL G3F SiC MOSFET 1 933Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 1 200

SMD/SMT TO-LL N-Channel 650 V 20 mOhms Enhancement
GeneSiC Semiconductor SiC MOSFET 1200V 25mohm TO-263-7 G3F SiC MOSFET 1 156Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 800

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 25 mOhms Enhancement
GeneSiC Semiconductor SiC MOSFET 1200V 34mohm TO-263-7 G3F SiC MOSFET 1 552Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 800

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 34 mOhms Enhancement
GeneSiC Semiconductor SiC MOSFET 1200V 40mohm TO-247-4 G3F SiC MOSFET 1 642Ir noliktavā
Min.: 1
Vair.: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 61 A 40 mOhms Enhancement
GeneSiC Semiconductor SiC MOSFET 1200V 135mohm TO-263-7 G3F SiC MOSFET 1 565Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 800

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 135 mOhms Enhancement
GeneSiC Semiconductor SiC MOSFET 1200V 18mohm TO-247-4 G3F SiC MOSFET
Datu lapa
435Ir noliktavā
Min.: 1
Vair.: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 18 mOhms Enhancement
GeneSiC Semiconductor SiC MOSFET 1200V 20mohm TO-263-7 G3F SiC MOSFET 424Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 800

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 123 A 20 mOhms Enhancement
GeneSiC Semiconductor SiC MOSFET 1200V 20mohm TO-247-4 G3F SiC MOSFET 565Ir noliktavā
Min.: 1
Vair.: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 109 A 20 mOhms Enhancement
GeneSiC Semiconductor SiC MOSFET 650V 20mohm TO-263-7 G3F SiC MOSFET 648Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 800

SMD/SMT TO-263-7 N-Channel 1 Channel 650 V 100 A 20 mOhms Enhancement
GeneSiC Semiconductor SiC MOSFET 650V 20mohm TO-247-4 G3F SiC MOSFET 1 112Ir noliktavā
Min.: 1
Vair.: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 90 A 20 mOhms Enhancement
GeneSiC Semiconductor SiC MOSFET 1200V 25mohm TO-247-4 G3F SiC MOSFET 247Ir noliktavā
Min.: 1
Vair.: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 25 mOhms Enhancement
GeneSiC Semiconductor SiC MOSFET 650V 27mohm TO-263-7 G3F SiC MOSFET 778Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 800

SMD/SMT TO-263-7 N-Channel 1 Channel 650 V 78 A 27 mOhms Enhancement
GeneSiC Semiconductor SiC MOSFET 650V 27mohm TO-247-4 G3F SiC MOSFET 1 119Ir noliktavā
Min.: 1
Vair.: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 70 A 27 mOhms Enhancement
GeneSiC Semiconductor SiC MOSFET 650V 27mohm TO-LL G3F SiC MOSFET 1 200Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 1 200

SMD/SMT TO-LL N-Channel 650 V 27 mOhms Enhancement
GeneSiC Semiconductor SiC MOSFET 1200V 34mohm TO-247-4 G3F SiC MOSFET 461Ir noliktavā
Min.: 1
Vair.: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 34 mOhms Enhancement
GeneSiC Semiconductor SiC MOSFET 1200V 40mohm TO-263-7 G3F SiC MOSFET 786Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 800

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 68 A 40 mOhms Enhancement
GeneSiC Semiconductor SiC MOSFET 650V 40mohm TO-247-3 G3F SiC MOSFET 1 163Ir noliktavā
Min.: 1
Vair.: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 52 A 40 mOhms Enhancement
GeneSiC Semiconductor SiC MOSFET 650V 40mohm TO-263-7 G3F SiC MOSFET 775Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 800

SMD/SMT TO-263-7 N-Channel 1 Channel 650 V 57 A 40 mOhms Enhancement
GeneSiC Semiconductor SiC MOSFET 650V 40mohm TO-247-4 G3F SiC MOSFET 1 058Ir noliktavā
Min.: 1
Vair.: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 52 A 40 mOhms Enhancement
GeneSiC Semiconductor SiC MOSFET 650V 40mohm TO-LL G3F SiC MOSFET 1 055Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 1 200

SMD/SMT TO-LL N-Channel 650 V 40 mOhms Enhancement
GeneSiC Semiconductor SiC MOSFET 650V 55mohm TO-247-3 G3F SiC MOSFET 1 129Ir noliktavā
Min.: 1
Vair.: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 42 A 55 mOhms Enhancement
GeneSiC Semiconductor SiC MOSFET 650V 55mohm TO-263-7 G3F SiC MOSFET 755Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 800

GeneSiC Semiconductor SiC MOSFET 650V 55mohm TO-247-4 G3F SiC MOSFET 1 056Ir noliktavā
Min.: 1
Vair.: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 42 A 55 mOhms Enhancement
GeneSiC Semiconductor SiC MOSFET 650V 55mohm TO-LL G3F SiC MOSFET 1 200Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 1 200