MMBTx General-Purpose Transistors

Comchip Technology MMBTx General-Purpose Transistors are NPN and PNP bipolar devices designed for high-gain, low-noise, amplifier, and switching applications. These devices offer high energy efficiency due to low heat generation and low collector-emitter saturation voltage. Comchip Technology MMBTx General-Purpose Transistors are in an industry-standard, low-profile SOT-23 package, well-suited for pick-and-place assembly.

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Comchip Technology Bipolārais transistors (BJT) VCEO=40V IC=200mA 108 083Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 3 000


Comchip Technology Bipolārais transistors (BJT) VCEO=40V IC=600mA 6 018Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 3 000


Comchip Technology Bipolārais transistors (BJT) TRANS PNP 300V 300mW SOT-23 2 905Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 3 000


Comchip Technology Bipolārais transistors (BJT) TRANS NPN 300V 350mW SOT-23 798Ir noliktavā
6 000Paredzamais 23.02.2026
Min.: 1
Vair.: 1
Rullis: 3 000

Comchip Technology Bipolārais transistors (BJT) 40V 0.6A SOT-23 8 003Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 3 000


Comchip Technology RF bipolārie tranzistori VCEO=160V IC=600mA 2 847Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 3 000


Comchip Technology Bipolārais transistors (BJT) VCEO=-40V IC=-600mA. 7 531Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 3 000


Comchip Technology Bipolārais transistors (BJT) I=200mA 56 913Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 3 000


Comchip Technology Bipolārais transistors (BJT) VCEO=40V IC=100mA 36 394Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 3 000

Comchip Technology RF bipolārie tranzistori VCEO=40V IC=600mA 9 714Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 3 000


Comchip Technology Bipolārais transistors (BJT) Transistor I=-200mA 8 694Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 3 000

Comchip Technology Bipolārais transistors (BJT) TRANS NPN 40V 0.6A SOT-23 479Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 3 000

Comchip Technology Bipolārais transistors (BJT) TRANS PNP 40V 0.6A SOT-23 12 345Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 3 000

Comchip Technology Bipolārais transistors (BJT) VCEO=-150V IC=-600mA 5 798Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 3 000

Comchip Technology Bipolārais transistors (BJT) TRANS NPN 160V 0.6A SOT-23 7 348Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 3 000

Comchip Technology Bipolārais transistors (BJT) TRANS NPN 60V 0.5A SOT-23 2 892Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 3 000

Comchip Technology Bipolārais transistors (BJT) TRANS NPN 80V 300mW SOT-23 5 173Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 3 000


Comchip Technology Bipolārais transistors (BJT) NPN TRANSISTOR 200MA 400V 5 316Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 3 000

Comchip Technology Bipolārais transistors (BJT) TRANS PNP 80V 225mW SOT-23 1 042Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 3 000


Comchip Technology Darlington tranzistori TRANS PNP 0.5A 30V SOT-23 Noliktavā neesošas preces izpildes laiks 16 Nedēļas
Min.: 1
Vair.: 1
Rullis: 3 000


Comchip Technology Darlington tranzistori TRANS PNP 0.5A 30V SOT-23 Noliktavā neesošas preces izpildes laiks 16 Nedēļas
Min.: 1
Vair.: 1
Rullis: 3 000

Comchip Technology MMBT2907A-HF
Comchip Technology RF bipolārie tranzistori 60V 0.6A SOT-23 Noliktavā neesošas preces izpildes laiks 16 Nedēļas
Min.: 1
Vair.: 1
Rullis: 3 000