Generation 5 CoolSiC™ 650V Schottky Diodes

Infineon Generation 5 CoolSiC™ 650V Schottky Diodes deliver market-leading efficiency at an attractive cost point. Infineon’s proprietary diffusion soldering process, already introduced with Generation 3, is now combined with a new, more compact design as well as the latest advancements in thin wafer technology, bringing improved thermal characteristics and lower Figures of Merit (Qc x Vf).

Rezultāti: 9
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Apraksts Datu lapa Pieejamība Cenas noteikšana (EUR) Atlasiet rezultātus tabulā pēc vienības cenas, pamatojoties uz daudzumu.
Daudz. RoHS ECAD modelis Montāžas veids
Iepakojums / korpusa
Konfigurācija
If - tiešā strāva
Vrrm - atkārtots pretspriegums
Vf - tiešais spriegums
Ifsm - tiešā impulsstrāva
IR - pretstrāva
Minimālā darba temperatūra
Maksimālā darba temperatūra
Sērija
Iepakojums
Infineon Technologies SiC Schottky Diodes SIC DIODES
Datu lapa
2 334Ir noliktavā
Min.: 1
Vair.: 1

Through Hole TO-220-2 Single 16 A 650 V 1.5 V 124 A 850 nA - 55 C + 175 C XDH16G65 Tube
Infineon Technologies SiC Schottky Diodes SIC DIODES
Datu lapa
2 693Ir noliktavā
Min.: 1
Vair.: 1

Through Hole TO-220-2 Single 4 A 650 V 1.5 V 38 A 200 nA - 55 C + 175 C XDH04G65 Tube
Infineon Technologies SiC Schottky Diodes SIC DIODES
Datu lapa
2 452Ir noliktavā
Min.: 1
Vair.: 1

Through Hole TO-220-2 Single 6 A 650 V 1.5 V 54 A 300 nA - 55 C + 175 C XDH06G65 Tube

Infineon Technologies SiC Schottky Diodes SIC DIODES
Datu lapa
540Ir noliktavā
Min.: 1
Vair.: 1

Through Hole TO-247-3 Single 40 A 650 V 1.5 V 182 A 2.2 uA - 55 C + 175 C XDW40G65 Tube

Infineon Technologies SiC Schottky Diodes SIC DIODES
Datu lapa
750Ir noliktavā
Min.: 1
Vair.: 1

Through Hole TO-247-3 Single 20 A 650 V 1.5 V 103 A 1.1 uA - 55 C + 175 C XDW20G65 Tube

Infineon Technologies SiC Schottky Diodes SIC DIODES
Datu lapa
187Ir noliktavā
Min.: 1
Vair.: 1

Through Hole TO-247-3 Single 40 A 650 V 1.5 V 182 A 2.2 uA - 55 C + 175 C XDW40G65 Tube
Infineon Technologies SiC Schottky Diodes SIC DIODES
Datu lapa
314Ir noliktavā
500Paredzamais 02.03.2026
Min.: 1
Vair.: 1

Through Hole TO-220-2 Single 10 A 650 V 1.5 V 82 A 500 nA - 55 C + 175 C XDH10G65 Tube

Infineon Technologies SiC Schottky Diodes SIC DIODES
Datu lapa
242Ir noliktavā
Min.: 1
Vair.: 1

Through Hole TO-247-3 Single 12 A 650 V 1.5 V 71 A 600 nA - 55 C + 175 C XDW12G65 Tube
Infineon Technologies SiC Schottky Diodes SIC DIODES
Datu lapa
525Ir noliktavā
Min.: 1
Vair.: 1

Through Hole TO-220-2 Single 8 A 650 V 1.5 V 68 A 400 nA - 55 C + 175 C XDH08G65 Tube