AEC-Q101 SiC Power MOSFETs

ROHM Semiconductor AEC-Q101 SiC Power MOSFETs are ideal for automotive and switch-mode power supplies. The SiC Power MOSFETs can boost switching frequency, decreasing the volumes of capacitors, reactors, and other components required. AEC-Q101 SiC Power MOSFETs offer excellent reductions in size and weight within various drive systems, such as inverters and DC-DC converters in vehicles. Vehicle batteries are trending towards larger capacities with shorter charging times. This demands high power and efficiency on board chargers such as 11kW and 22kW. This leads to increased adoption of SiC MOSFETs. The AEC-Q101 SiC Power MOSFETs meet the needs of electronic vehicles and utilize a trench gate structure. The future design of ROHM's SiC MOSFETs endeavors to improve quality, strengthen its lineup to increase device performance, reduce power consumption, and achieve greater miniaturization.

Rezultāti: 34
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Daudz. RoHS ECAD modelis Montāžas veids
Iepakojums / korpusa
Tranzistora polaritāte
Kanālu skaits
VDS - DS pārtraukuma spriegums
Id - nepārtraukta noplūdes strāva
RDS ieslēgts - noplūdes avota pretestība
VGS - kanāla-avota spriegums
VGS TH - kanāla-avota sliekšņa spriegums
Qg - kanāla lādiņš
Minimālā darba temperatūra
Maksimālā darba temperatūra
Pd - jaudas izkliede
Kanāla režīms
Kvalifikācija
ROHM Semiconductor SiC MOSFET TO247 1.2KV 26A N-CH SIC
Datu lapa
499Ir noliktavā
Min.: 1
Vair.: 1

Through Hole TO-247N-3 N-Channel 1 Channel 1.2 kV 26 A 81 mOhms - 4 V, + 21 V 4.8 V 64 nC + 175 C 115 W Enhancement
ROHM Semiconductor SiC MOSFET TO247 750V 34A N-CH SIC
Datu lapa
751Ir noliktavā
Min.: 1
Vair.: 1

Through Hole TO-247-4 N-Channel 1 Channel 750 V 34 A 59 mOhms - 4 V, + 21 V 4.8 V 63 nC + 175 C 115 W Enhancement
ROHM Semiconductor SiC MOSFET TO247 1.2KV 26A N-CH SIC
Datu lapa
833Ir noliktavā
Min.: 1
Vair.: 1

Through Hole TO-247N-3 N-Channel 1 Channel 1.2 kV 26 A 81 mOhms - 4 V, + 21 V 4.8 V 64 nC + 175 C 115 W Enhancement
ROHM Semiconductor SiC MOSFET TO247 1.2KV 26A N-CH SIC
Datu lapa
584Ir noliktavā
Min.: 1
Vair.: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 26 A 81 mOhms - 4 V, + 21 V 4.8 V 64 nC + 175 C 115 W Enhancement
ROHM Semiconductor SiC MOSFET TO263 750V 31A N-CH SIC
Datu lapa
50Ir noliktavā
MouseReel ir pieejams
Min.: 1
Vair.: 1
Rullis: 1 000

SMD/SMT TO-263-7 N-Channel 1 Channel 750 V 31 A 59 mOhms - 4 V, + 21 V 4.8 V 63 nC + 175 C 93 W Enhancement AEC-Q101
ROHM Semiconductor SiC MOSFET TO247 1.2KV 43A N-CH SIC
Datu lapa
115Ir noliktavā
Min.: 1
Vair.: 1

Through Hole TO-247N-3 N-Channel 1 Channel 1.2 kV 43 A 47 mOhms - 4 V, + 21 V 4.8 V 91 nC + 175 C 176 W Enhancement
ROHM Semiconductor SiC MOSFET TO247 750V 34A N-CH SIC
Datu lapa
810Ir noliktavā
Min.: 1
Vair.: 1

Through Hole TO-247N-3 N-Channel 1 Channel 750 V 34 A 59 mOhms - 4 V, + 21 V 4.8 V 63 nC + 175 C 115 W Enhancement
ROHM Semiconductor SiC MOSFET 650V 118A 427W SIC 17mOhm TO-247N
Datu lapa
Komentāri par produktiem
360Ir noliktavā
Min.: 1
Vair.: 1

Through Hole TO-247N-3 N-Channel 1 Channel 650 V 118 A 22.1 mOhms - 4 V, + 22 V 5.6 V 172 nC - 55 C + 175 C 427 W Enhancement AEC-Q101
ROHM Semiconductor SiC MOSFET 1200V 17A 103W SIC 160mOhm TO-247N
Datu lapa
Komentāri par produktiem
506Ir noliktavā
Min.: 1
Vair.: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 17 A 208 mOhms - 4 V, + 22 V 5.6 V 42 nC + 175 C 103 W Enhancement AEC-Q101
ROHM Semiconductor SiC MOSFET TO247 750V 56A N-CH SIC
Datu lapa
814Ir noliktavā
Min.: 1
Vair.: 1

Through Hole TO-247-4 N-Channel 1 Channel 750 V 56 A 26 mOhms - 4 V, + 21 V 4.8 V 94 nC + 175 C 176 W Enhancement
ROHM Semiconductor SiC MOSFET 1200V 72A 339W SIC 30mOhm TO-247N
Datu lapa
Komentāri par produktiem
352Ir noliktavā
Min.: 1
Vair.: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 72 A 39 mOhms - 4 V, + 22 V 5.6 V 131 nC - 55 C + 175 C 339 W Enhancement AEC-Q101
ROHM Semiconductor SiC MOSFET 1200V 95A 427W SIC 22mOhm TO-247N
Datu lapa
Komentāri par produktiem
199Ir noliktavā
Min.: 1
Vair.: 1

Through Hole TO-247N-3 N-Channel 1 Channel 1.2 kV 95 A 28.6 mOhms - 4 V, + 22 V 5.6 V 178 nC - 55 C + 175 C 427 W Enhancement AEC-Q101
ROHM Semiconductor SiC MOSFET 1200V 31A 165W SIC 80mOhm TO-247N
Datu lapa
Komentāri par produktiem
393Ir noliktavā
Min.: 1
Vair.: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 31 A 80 mOhms - 4 V, + 22 V 2.7 V 60 nC - 55 C + 175 C 165 W Enhancement AEC-Q101
ROHM Semiconductor SiC MOSFET 1200V 24A 134W SIC 105mOhm TO-247N
Datu lapa
Komentāri par produktiem
1 629Ir noliktavā
Min.: 1
Vair.: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 24 A 137 mOhms - 4 V, + 22 V 5.6 V 51 nC + 175 C 134 W Enhancement AEC-Q101
ROHM Semiconductor SiC MOSFET 650V 70A 262W SIC 30mOhm TO-247N
Datu lapa
Komentāri par produktiem
376Ir noliktavā
Min.: 1
Vair.: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 70 A 39 mOhms - 4 V, + 22 V 5.6 V 104 nC - 55 C + 175 C 262 W Enhancement AEC-Q101
ROHM Semiconductor SiC MOSFET 1200V 55A 262W SIC 40mOhm TO-247N
Datu lapa
Komentāri par produktiem
467Ir noliktavā
Min.: 1
Vair.: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 55 A 52 mOhms - 4 V, + 22 V 5.6 V 107 nC - 55 C + 175 C 262 W Enhancement AEC-Q101
ROHM Semiconductor SiC MOSFET 650V 39A 165W SIC 60mOhm TO-247N
Datu lapa
Komentāri par produktiem
428Ir noliktavā
Min.: 1
Vair.: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 39 A 78 mOhms - 4 V, + 22 V 5.6 V 58 nC + 175 C 165 W Enhancement AEC-Q101
ROHM Semiconductor SiC MOSFET 650V 30A 134W SIC 80mOhm TO-247N
Datu lapa
Komentāri par produktiem
376Ir noliktavā
Min.: 1
Vair.: 1

Through Hole TO-247N-3 N-Channel 1 Channel 650 V 30 A 104 mOhms - 4 V, + 22 V 5.6 V 48 nC + 175 C 134 W Enhancement AEC-Q101
ROHM Semiconductor SiC MOSFET TO247 750V 56A N-CH SIC
Datu lapa
787Ir noliktavā
Min.: 1
Vair.: 1

Through Hole TO-247N-3 N-Channel 1 Channel 750 V 56 A 26 mOhms - 4 V, + 21 V 4.8 V 94 nC + 175 C 176 W Enhancement
ROHM Semiconductor SiC MOSFET TO263 750V 51A N-CH SIC
Datu lapa
2 020Ir noliktavā
MouseReel ir pieejams
Min.: 1
Vair.: 1
Rullis: 1 000

SMD/SMT TO-263-7 N-Channel 1 Channel 750 V 51 A 26 mOhms - 4 V, + 21 V 4.8 V 94 nC + 175 C 150 W Enhancement
ROHM Semiconductor SiC MOSFET TO263 750V 51A N-CH SIC
Datu lapa
947Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 1 000

SMD/SMT TO-263-7 N-Channel 1 Channel 750 V 51 A 26 mOhms - 4 V, + 21 V 4.8 V 94 nC + 175 C 150 W Enhancement
ROHM Semiconductor SiC MOSFET TO247 1.2KV 43A N-CH SIC
Datu lapa
493Ir noliktavā
Min.: 1
Vair.: 1

Through Hole TO-247N-3 N-Channel 1 Channel 1.2 kV 43 A 47 mOhms - 4 V, + 21 V 4.8 V 91 nC + 175 C 176 W Enhancement
ROHM Semiconductor SiC MOSFET TO247 1.2KV 43A N-CH SIC
Datu lapa
199Ir noliktavā
Min.: 1
Vair.: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 43 A 47 mOhms - 4 V, + 21 V 4.8 V 91 nC + 175 C 176 W Enhancement
ROHM Semiconductor SiC MOSFET TO247 1.2KV 43A N-CH SIC
Datu lapa
686Ir noliktavā
Min.: 1
Vair.: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 43 A 47 mOhms - 4 V, + 21 V 4.8 V 91 nC + 175 C 176 W Enhancement
ROHM Semiconductor SiC MOSFET TO263 750V 31A N-CH SIC
Datu lapa
1 996Ir noliktavā
Min.: 1
Vair.: 1
Maks.: 100
Rullis: 1 000

SMD/SMT TO-263-7 N-Channel 1 Channel 750 V 31 A 59 mOhms - 4 V, + 21 V 4.8 V 63 nC + 175 C 93 W Enhancement