60/100/150V Automotive-Grade MOSFETs

PANJIT 60/100/150V Automotive-Grade MOSFETs are a family of 60V, 100V, and 150V AEC-Q101 qualified MOSFETs. The PANJIT 60/100/150V MOSFETs are designed with advanced trench technology for superior performance and efficiency. Ideal for automotive and industrial power systems, these MOSFETs offer an exceptional figure of merit (FOM), significantly lower RDS(ON), and reduced capacitance. These features minimize conduction and switching losses for improved electrical performance. Available in compact packages like DFN3333-8L, DFN5060-8L, DFN5060B-8L, TO-252AA, and TO-220AB-L, these MOSFETs enable efficient design solutions for modern electronics.

Rezultāti: 26
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Daudz. RoHS ECAD modelis Tehnoloģija
Montāžas veids
Iepakojums / korpusa
Tranzistora polaritāte
Kanālu skaits
VDS - DS pārtraukuma spriegums
Id - nepārtraukta noplūdes strāva
RDS ieslēgts - noplūdes avota pretestība
VGS - kanāla-avota spriegums
VGS TH - kanāla-avota sliekšņa spriegums
Qg - kanāla lādiņš
Minimālā darba temperatūra
Maksimālā darba temperatūra
Pd - jaudas izkliede
Kanāla režīms
Kvalifikācija
Iepakojums
Panjit MOSFET 150V N-Channel Enhancement Mode MOSFET
Datu lapa
2 980Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 3 000

Si SMD/SMT TO-252AA-2 N-Channel 1 Channel 150 V 26 A 49 mOhms - 20 V, 20 V 4 V 22 nC - 55 C + 175 C 83 W Enhancement AEC-Q101 Reel, Cut Tape
Panjit MOSFET 150V N-Channel Enhancement Mode MOSFET
Datu lapa
2 925Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 3 000

Si SMD/SMT TO-252AA-2 N-Channel 1 Channel 150 V 40 A 25 mOhms - 20 V, 20 V 4 V 36 nC - 55 C + 175 C 100 W Enhancement AEC-Q101 Reel, Cut Tape
Panjit MOSFET 150V N-Channel Enhancement Mode MOSFET
Datu lapa
4 533Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 5 000

Si SMD/SMT DFN-3333-8 N-Channel 1 Channel 150 V 18 A 50 mOhms - 20 V, 20 V 4 V 22 nC - 55 C + 175 C 50 W Enhancement AEC-Q101 Reel, Cut Tape
Panjit MOSFET 150V N-Channel Enhancement Mode MOSFET
Datu lapa
2 579Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 3 000

Si SMD/SMT DFN-5060-8 N-Channel 1 Channel 150 V 42 A 21 mOhms - 20 V, 20 V 4 V 36 nC - 55 C + 175 C 94 W Enhancement AEC-Q101 Reel, Cut Tape
Panjit MOSFET 150V N-Channel Enhancement Mode MOSFET
Datu lapa
2 824Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 3 000

Si SMD/SMT DFN-5060-8 N-Channel 1 Channel 150 V 25 A 49 mOhms - 20 V, 20 V 4 V 22 nC - 55 C + 175 C 79 W Enhancement AEC-Q101 Reel, Cut Tape
Panjit MOSFET 60V N-Channel Enhancement Mode MOSFET
Datu lapa
2 530Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 3 000

Si SMD/SMT TO-252AA-2 N-Channel 1 Channel 60 V 38 A 13.5 mOhms - 20 V, 20 V 3 V 16 nC - 55 C + 175 C 45 W Enhancement AEC-Q101 Reel, Cut Tape
Panjit MOSFET 60V N-Channel Enhancement Mode MOSFET
Datu lapa
3 000Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 3 000

Si SMD/SMT DFN-5060-8 N-Channel 1 Channel 60 V 40 A 13.5 mOhms - 20 V, 20 V 3 V 16 nC - 55 C + 175 C 43 W Enhancement AEC-Q101 Reel, Cut Tape
Panjit MOSFET 60V N-Channel Enhancement Mode MOSFET
Datu lapa
Noliktavā neesošas preces izpildes laiks 20 Nedēļas
Min.: 3 000
Vair.: 3 000
Rullis: 3 000

Si SMD/SMT TO-252AA-2 N-Channel 1 Channel 60 V 168 A 3.3 mOhms - 20 V, 20 V 3 V 82 nC - 55 C + 175 C 188 W Enhancement AEC-Q101 Reel
Panjit MOSFET 100V N-Channel Enhancement Mode MOSFET
Datu lapa
Noliktavā neesošas preces izpildes laiks 20 Nedēļas
Min.: 3 000
Vair.: 3 000
Rullis: 3 000

Si SMD/SMT TO-252AA-2 N-Channel 1 Channel 100 V 40 A 18 mOhms - 20 V, 20 V 3 V 23 nC - 55 C + 175 C 58 W Enhancement AEC-Q101 Reel
Panjit MOSFET 150V N-Channel Enhancement Mode MOSFET
Datu lapa
Noliktavā neesošas preces izpildes laiks 20 Nedēļas
Min.: 3 000
Vair.: 3 000
Rullis: 3 000

Si SMD/SMT TO-252AA-2 N-Channel 1 Channel 150 V 65 A 16 mOhms - 20 V, 20 V 4 V 53 nC - 55 C + 175 C 167 W Enhancement AEC-Q101 Reel
Panjit MOSFET 60V N-Channel Enhancement Mode MOSFET
Datu lapa
Noliktavā neesošas preces izpildes laiks 20 Nedēļas
Min.: 3 000
Vair.: 3 000
Rullis: 3 000

Si SMD/SMT TO-252AA-2 N-Channel 1 Channel 60 V 66 A 7.9 mOhms - 20 V, 20 V 3 V 27 nC - 55 C + 175 C 68 W Enhancement AEC-Q101 Reel
Panjit MOSFET 100V N-Channel Enhancement Mode MOSFET
Datu lapa
Noliktavā neesošas preces izpildes laiks 20 Nedēļas
Min.: 3 000
Vair.: 3 000
Rullis: 3 000

Si SMD/SMT TO-252AA-2 N-Channel 1 Channel 100 V 59 A 12 mOhms - 20 V, 20 V 3 V 35 nC - 55 C + 175 C 83 W Enhancement AEC-Q101 Reel
Panjit MOSFET 100V N-Channel Enhancement Mode MOSFET
Datu lapa
Noliktavā neesošas preces izpildes laiks 20 Nedēļas
Min.: 3 000
Vair.: 3 000
Rullis: 3 000

Si SMD/SMT TO-252AA-2 N-Channel 1 Channel 100 V 88 A 7.4 mOhms - 20 V, 20 V 3 V 62 nC - 55 C + 175 C 115 W Enhancement AEC-Q101 Reel
Panjit MOSFET 60V N-Channel Enhancement Mode MOSFET
Datu lapa
Noliktavā neesošas preces izpildes laiks 20 Nedēļas
Min.: 3 000
Vair.: 3 000
Rullis: 3 000

Si SMD/SMT TO-252AA-2 N-Channel 1 Channel 60 V 94 A 5.9 mOhms - 20 V, 20 V 3 V 40 nC - 55 C + 175 C 94 W Enhancement AEC-Q101 Reel
Panjit MOSFET 60V N-Channel Enhancement Mode MOSFET
Datu lapa
Noliktavā neesošas preces izpildes laiks 20 Nedēļas
Min.: 5 000
Vair.: 5 000
Rullis: 5 000

Si SMD/SMT DFN-3333-8 N-Channel 1 Channel 60 V 54 A 8.4 mOhms - 20 V, 20 V 3 V 27 nC - 55 C + 175 C 48 W Enhancement AEC-Q101 Reel
Panjit MOSFET 60V N-Channel Enhancement Mode MOSFET
Datu lapa
Noliktavā neesošas preces izpildes laiks 20 Nedēļas
Min.: 5 000
Vair.: 5 000
Rullis: 5 000

Si SMD/SMT DFN-3333-8 N-Channel 1 Channel 60 V 36 A 14 mOhms - 20 V, 20 V 3 V 16 nC - 55 C + 175 C 37 W Enhancement AEC-Q101 Reel
Panjit MOSFET 100V N-Channel Enhancement Mode MOSFET
Datu lapa
Noliktavā neesošas preces izpildes laiks 20 Nedēļas
Min.: 5 000
Vair.: 5 000
Rullis: 5 000

Si SMD/SMT DFN-3333-8 N-Channel 1 Channel 100 V 52 A 11.3 mOhms - 20 V, 20 V 3 V 35 nC - 55 C + 175 C 60 W Enhancement AEC-Q101 Reel
Panjit MOSFET 100V N-Channel Enhancement Mode MOSFET
Datu lapa
Noliktavā neesošas preces izpildes laiks 20 Nedēļas
Min.: 1
Vair.: 1
Rullis: 5 000

Si SMD/SMT DFN-3333-8 N-Channel 1 Channel 100 V 35 A 17 mOhms - 20 V, 20 V 3 V 23 nC - 55 C + 175 C 42 W Enhancement AEC-Q101 Reel, Cut Tape
Panjit MOSFET 60V N-Channel Enhancement Mode MOSFET
Datu lapa
Noliktavā neesošas preces izpildes laiks 20 Nedēļas
Min.: 3 000
Vair.: 3 000
Rullis: 3 000

Si SMD/SMT DFN-5060-8 N-Channel 1 Channel 60 V 190 A 2.6 mOhms - 20 V, 20 V 3 V 82 nC - 55 C + 175 C 188 W Enhancement AEC-Q101 Reel
Panjit MOSFET 60V N-Channel Enhancement Mode MOSFET
Datu lapa
Noliktavā neesošas preces izpildes laiks 20 Nedēļas
Min.: 3 000
Vair.: 3 000
Rullis: 3 000

Si SMD/SMT DFN-5060-8 N-Channel 1 Channel 60 V 89 A 5.9 mOhms - 20 V, 20 V 3 V 40 nC - 55 C + 175 C 42 W Enhancement AEC-Q101 Reel
Panjit MOSFET 60V N-Channel Enhancement Mode MOSFET
Datu lapa
Noliktavā neesošas preces izpildes laiks 20 Nedēļas
Min.: 3 000
Vair.: 3 000
Rullis: 3 000

Si SMD/SMT DFN-5060-8 N-Channel 1 Channel 60 V 59 A 7.9 mOhms - 20 V, 20 V 3 V 27 nC - 55 C + 175 C 50 W Enhancement AEC-Q101 Reel
Panjit MOSFET 100V N-Channel Enhancement Mode MOSFET
Datu lapa
Noliktavā neesošas preces izpildes laiks 20 Nedēļas
Min.: 3 000
Vair.: 3 000
Rullis: 3 000

Si SMD/SMT DFN-5060-8 N-Channel 1 Channel 100 V 75 A 7.4 mOhms - 20 V, 20 V 3 V 62 nC - 55 C + 175 C 83 W Enhancement AEC-Q101 Reel
Panjit MOSFET 100V N-Channel Enhancement Mode MOSFET
Datu lapa
Noliktavā neesošas preces izpildes laiks 20 Nedēļas
Min.: 3 000
Vair.: 3 000
Rullis: 3 000

Si SMD/SMT DFN-5060-8 N-Channel 1 Channel 100 V 56 A 11 mOhms - 20 V, 20 V 3 V 35 nC - 55 C + 175 C 68 W Enhancement AEC-Q101 Reel
Panjit MOSFET 100V N-Channel Enhancement Mode MOSFET
Datu lapa
Noliktavā neesošas preces izpildes laiks 20 Nedēļas
Min.: 3 000
Vair.: 3 000
Rullis: 3 000

Si SMD/SMT DFN-5060-8 N-Channel 1 Channel 100 V 40 A 17 mOhms - 20 V, 20 V 3 V 23 nC - 55 C + 175 C 54 W Enhancement AEC-Q101 Reel
Panjit MOSFET 150V N-Channel Enhancement Mode MOSFET
Datu lapa
Noliktavā neesošas preces izpildes laiks 20 Nedēļas
Min.: 3 000
Vair.: 3 000
Rullis: 3 000

Si SMD/SMT DFN-5060-8 N-Channel 1 Channel 150 V 59 A 17 mOhms - 20 V, 20 V 4 V 53 nC - 55 C + 175 C 150 W Enhancement AEC-Q101 Reel