Model BID Insulated Gate Bipolar Transistors

Bourns Model BID Insulated Gate Bipolar Transistors (IGBTs) combine technology from a MOSFET gate and a bipolar transistor and are designed for high voltage/high current applications. The Model BID IGBTs use advanced Trench-Gate Field-Stop technology to provide greater control of the dynamic characteristics, resulting in a lower Collector-Emitter Saturation Voltage and fewer switching losses. The IGBTs feature a -55°C to +150°C operating temperature range and are available in TO-252, TO-247, and TO-247N packages. These thermally efficient components provide a lower thermal resistance making them suitable IGBT solutions for Switch-Mode Power Supplies (SMPS), Uninterruptible Power Sources (UPS), and Power Factor Correction (PFC) applications.

Rezultāti: 9
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Daudz. RoHS ECAD modelis Tehnoloģija
Iepakojums / korpusa
Montāžas veids
Konfigurācija
Kolektors - starotāja spriegums, VCEO maks.
Kolektora-starotāja piesātinājuma spriegums
Maksimālais kanāla starotāja spriegums
Nepārtraukta kolektora strāva pie 25 C
Pd - jaudas izkliede
Minimālā darba temperatūra
Maksimālā darba temperatūra
Sērija
Iepakojums
Bourns IGBT IGBT Discrete 600V, 5A in TO-252
Datu lapa
24 183Ir noliktavā
MouseReel ir pieejams
Min.: 1
Vair.: 1
Rullis: 2 500

Si TO-252-3 SMD/SMT Single 600 V 1.5 V - 30 V, 30 V 10 A 82 W - 55 C + 150 C BID Reel, Cut Tape, MouseReel
Bourns IGBT IGBT Discrete 600V, 20A in TO-247
Datu lapa
4 678Ir noliktavā
Min.: 1
Vair.: 1

Si TO-247-3 Through Hole Single 600 V 1.7 V - 20 V, 20 V 40 A 192 W - 55 C + 150 C BID Tube
Bourns IGBT IGBT Discrete 650V, 50A in TO-247
Datu lapa
2 233Ir noliktavā
Min.: 1
Vair.: 1

Si TO-247-3 Through Hole Single 650 V 1.65 V - 20 V, 20 V 100 A 416 W - 55 C + 150 C BID Tube
Bourns IGBT IGBT Discrete 600V, 30A in TO-247N
Datu lapa
267Ir noliktavā
Min.: 1
Vair.: 1

Si TO-247N-3 Through Hole Single 600 V 1.65 V - 20 V, 20 V 60 A 230 W - 55 C + 150 C BID Tube
Bourns IGBT IGBT Discrete 650V, 75A, High speed switching in TO-247-3L
Datu lapa
5 811Ir noliktavā
Min.: 1
Vair.: 1

Si TO-247-3 Through Hole Single 650 V 1.65 V 20 V 150 A 394 W - 40 C + 175 C BID Tube
Bourns IGBT IGBT Discrete 600V, 30A in TO-247
Datu lapa
1 840Ir noliktavā
Min.: 1
Vair.: 1

Si TO-247-3 Through Hole Single 600 V 1.65 V - 20 V, 20 V 60 A 230 W - 55 C + 150 C BID Tube
Bourns IGBT IGBT Discrete 650V, 40A, Medium speed switching in TO-247-3L
Datu lapa
2 830Ir noliktavā
Min.: 1
Vair.: 1

Si TO-247-3 Through Hole Single 650 V 1.35 V 20 V 80 A 230 W - 40 C + 175 C BID Tube
Bourns IGBT IGBT Discrete 650V, 40A, High speed switching in TO-247-3L
Datu lapa
2 967Ir noliktavā
Min.: 1
Vair.: 1

Si TO-247-3 Through Hole Single 650 V 1.65 V 20 V 80 A 300 W - 40 C + 175 C BID Tube
Bourns IGBT IGBT Discrete 650V, 75A, Medium speed switching in TO-247-3L
Datu lapa
2 783Ir noliktavā
Min.: 1
Vair.: 1

Si TO-247-3 Through Hole Single 650 V 1.42 V 20 V 150 A 394 W - 40 C + 175 C BID Tube