DDR SDRAM

ISSI 512-Mbit DDR SDRAM achieves high-speed data transfer using pipeline architecture and two data word accesses per clock cycle. The 536,870,912-bit memory array is internally organized as four banks of 128Mb to allow concurrent operations. The pipeline allows Read and Write burst accesses to be virtually continuous, with the option to concatenate or truncate the bursts. The programmable features of burst length, burst sequence, and CAS latency enable further advantages. The device is available in 8-bit, 16-bit, and 32-bit data word sizes. Input data is registered on the I/O pins on both edges of Data Strobe signal(s), while output data is referenced to both edges of Data Strobe and both edges of CLK. ISSI 512-Mbit DDR SDRAM commands are registered on the positive edges of CLK.

Rezultāti: 38
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Daudz. RoHS ECAD modelis Tips
Atmiņas lielums
Datu kopnes platums
Maksimālā takts frekvence
Iepakojums / korpusa
Organizācija
Piekļuves laiks
Barošanas spriegums - min.
Barošanas spriegums - maks.
Minimālā darba temperatūra
Maksimālā darba temperatūra
Sērija
Iepakojums
ISSI DRAM 256M (16Mx16) 166MHz 2.5v DDR SDRAM
Datu lapa
349Ir noliktavā
Min.: 1
Vair.: 1
Maks.: 37

SDRAM - DDR 256 Mbit 16 bit 166 MHz TSOP-II-66 16 M x 16 6 ns 2.3 V 2.7 V - 40 C + 85 C IS43R16160D Tray
ISSI DRAM 256M (16Mx16) 166MHz 2.5v DDR SDRAM
Datu lapa
20Ir noliktavā
Min.: 1
Vair.: 1
Maks.: 200

SDRAM - DDR 256 Mbit 16 bit 166 MHz TSOP-II-66 16 M x 16 6 ns 2.3 V 2.7 V 0 C + 70 C IS43R16160D Tray
ISSI DRAM 256M, 2.5V, 200Mhz 16Mx16 DDR SDRAM
Datu lapa
58Ir noliktavā
Min.: 1
Vair.: 1
Maks.: 200

SDRAM - DDR 256 Mbit 16 bit 200 MHz TSOP-II-66 16 M x 16 5 ns 2.3 V 2.7 V - 40 C + 85 C IS46R16160D Tray
ISSI DRAM 512M (32Mx16) 200MHz 2.5v DDR SDRAM
Datu lapa
61Ir noliktavā
Min.: 1
Vair.: 1
Maks.: 200

SDRAM - DDR 512 Mbit 16 bit 200 MHz TSOP-II-66 32 M x 16 5 ns 2.3 V 2.7 V 0 C + 70 C IS43R16320D Tray
ISSI DRAM 512M (32Mx16) 166MHz 2.5v DDR SDRAM
Datu lapa
28Ir noliktavā
Min.: 1
Vair.: 1
Maks.: 200

SDRAM - DDR 512 Mbit 16 bit 166 MHz TSOP-II-66 32 M x 16 6 ns 2.3 V 2.7 V 0 C + 70 C IS43R16320D Tray
ISSI DRAM 512M (32Mx16) 166MHz 2.5v DDR SDRAM
Datu lapa
18Ir noliktavā
324Paredzamais 09.04.2026
Min.: 1
Vair.: 1
Maks.: 89

SDRAM - DDR 512 Mbit 16 bit 166 MHz TSOP-II-66 32 M x 16 6 ns 2.3 V 2.7 V - 40 C + 85 C IS43R16320D Tray
ISSI DRAM 512M (64Mx8) 200MHz 2.5v DDR SDRAM
Datu lapa
96Ir noliktavā
Min.: 1
Vair.: 1

SDRAM - DDR 512 Mbit 8 bit 200 MHz TSOP-II-66 64 M x 8 5 ns 2.5 V 2.7 V 0 C + 70 C IS43R86400D Tray
ISSI DRAM 512M (64Mx8) 166MHz 2.5v DDR SDRAM
Datu lapa
33Ir noliktavā
Min.: 1
Vair.: 1
Maks.: 10

SDRAM - DDR 512 Mbit 8 bit 166 MHz TSOP-II-66 64 M x 8 6 ns 2.3 V 2.7 V - 40 C + 85 C IS43R86400D Tray
ISSI DRAM 256M (16Mx16) 200MHz 2.5v DDR SDRAM
Datu lapa
5Ir noliktavā
Min.: 1
Vair.: 1

SDRAM - DDR 256 Mbit 32 bit 200 MHz LFBGA-144 8 M x 32 5 ns 2.3 V 2.7 V 0 C + 70 C IS43R32800D Tray
ISSI DRAM 256M (16Mx16) 200MHz 2.5v DDR SDRAM
Datu lapa
Noliktavā neesošas preces izpildes laiks 8 Nedēļas
Min.: 190
Vair.: 190

SDRAM - DDR 256 Mbit 16 bit 200 MHz FBGA-60 16 M x 16 5 ns 2.3 V 2.7 V 0 C + 70 C IS43R16160D Tray
ISSI DRAM 256M (16Mx16) 200MHz 2.5v DDR SDRAM
Datu lapa
Noliktavā neesošas preces izpildes laiks 8 Nedēļas
Min.: 190
Vair.: 190

SDRAM - DDR 256 Mbit 16 bit 200 MHz FBGA-60 16 M x 16 5 ns 2.3 V 2.7 V - 40 C + 85 C IS43R16160D Tray
ISSI DRAM 256M (16Mx16) 200MHz 2.5v DDR SDRAM
Datu lapa
Noliktavā neesošas preces izpildes laiks 8 Nedēļas
Min.: 1
Vair.: 1

SDRAM - DDR 256 Mbit 16 bit 200 MHz TSOP-II-66 16 M x 16 5 ns 2.3 V 2.7 V 0 C + 70 C IS43R16160D Tray
ISSI DRAM 256M, 2.5V, DDR, 16Mx16, 200MHz, 66 pin TSOP II (400 mil) RoHS, IT
Datu lapa
Izpildes laiks 8 Nedēļas
Min.: 1
Vair.: 1

SDRAM - DDR 256 Mbit 16 bit 200 MHz TSOP-II-66 16 M x 16 5 ns 2.3 V 2.7 V - 40 C + 85 C IS43R16160D Tray
ISSI DRAM 256M (16Mx16) 166MHz 2.5v DDR SDRAM
Datu lapa
Noliktavā neesošas preces izpildes laiks 8 Nedēļas
Min.: 190
Vair.: 190

SDRAM - DDR 256 Mbit 16 bit 166 MHz FBGA-60 16 M x 16 6 ns 2.3 V 2.7 V 0 C + 70 C IS43R16160D Tray
ISSI DRAM 256M (16Mx16) 166MHz 2.5v DDR SDRAM
Datu lapa
Noliktavā neesošas preces izpildes laiks 8 Nedēļas
Min.: 1
Vair.: 1
Maks.: 5

SDRAM - DDR 256 Mbit 16 bit 166 MHz FBGA-60 16 M x 16 6 ns 2.3 V 2.7 V - 40 C + 85 C IS43R16160D Tray
ISSI DRAM 512M, 2.5V, DDR 32Mx16, 200MHz, 60 ball BGA (8mmx13mm) RoHS
Datu lapa
Noliktavā neesošas preces izpildes laiks 8 Nedēļas
Min.: 190
Vair.: 190

SDRAM - DDR 512 Mbit 16 bit 200 MHz BGA-60 32 M x 16 5 ns 2.3 V 2.7 V 0 C + 70 C IS43R16320D Tray
ISSI DRAM 512M (32Mx16) 200MHz 2.5v DDR SDRAM
Datu lapa
Noliktavā neesošas preces izpildes laiks 8 Nedēļas
Min.: 190
Vair.: 190

SDRAM - DDR 512 Mbit 16 bit 200 MHz BGA-60 32 M x 16 5 ns 2.3 V 2.7 V - 40 C + 85 C IS43R16320D Tray
ISSI DRAM 512M (32Mx16) 200MHz 2.5v DDR SDRAM
Datu lapa
Noliktavā neesošas preces izpildes laiks 8 Nedēļas
Min.: 108
Vair.: 108

SDRAM - DDR 512 Mbit 16 bit 200 MHz TSOP-II-66 32 M x 16 5 ns 2.3 V 2.7 V - 40 C + 85 C IS43R16320D Tray
ISSI DRAM 512M (32Mx16) 166MHz 2.5v DDR SDRAM
Datu lapa
Noliktavā neesošas preces izpildes laiks 8 Nedēļas
Min.: 190
Vair.: 190

SDRAM - DDR 512 Mbit 16 bit 166 MHz BGA-60 32 M x 16 6 ns 2.3 V 2.7 V 0 C + 70 C IS43R16320D Tray
ISSI DRAM 512M (32Mx16) 166MHz 2.5v DDR SDRAM
Datu lapa
Noliktavā neesošas preces izpildes laiks 8 Nedēļas
Min.: 1
Vair.: 1

SDRAM - DDR 512 Mbit 16 bit 166 MHz BGA-60 32 M x 16 6 ns 2.3 V 2.7 V - 40 C + 85 C IS43R16320D Tray
ISSI DRAM 256M, 2.5V, DDR, 32Mx8, 200MHz, 66 pin TSOP II (400 mil) RoHS
Datu lapa
Noliktavā neesošas preces izpildes laiks 8 Nedēļas
Min.: 1
Vair.: 1

SDRAM - DDR 256 Mbit 8 bit 200 MHz TSOP-II-66 32 M x 8 5 ns 2.3 V 2.7 V 0 C + 70 C IS43R83200D Tray
ISSI DRAM 256M, 2.5V, DDR, 32Mx8, 166MHz, 66 pin TSOP II (400 mil) RoHS
Datu lapa
Noliktavā neesošas preces izpildes laiks 8 Nedēļas
Min.: 1
Vair.: 1

SDRAM - DDR 256 Mbit 8 bit 166 MHz TSOP-II-66 32 M x 8 6 ns 2.3 V 2.7 V 0 C + 70 C IS43R83200D Tray
ISSI DRAM 256M, 2.5V, DDR, 32Mx8, 166MHz, 66 pin TSOP II (400 mil) RoHS, IT
Datu lapa
Noliktavā neesošas preces izpildes laiks 8 Nedēļas
Min.: 1
Vair.: 1

SDRAM - DDR 256 Mbit 8 bit 166 MHz TSOP-II-66 32 M x 8 6 ns 2.3 V 2.7 V - 40 C + 85 C IS43R83200D Tray
ISSI DRAM 512M (64Mx8) 200MHz 2.5v DDR SDRAM
Datu lapa
Noliktavā neesošas preces izpildes laiks 8 Nedēļas
Min.: 190
Vair.: 190

SDRAM - DDR 512 Mbit 8 bit 200 MHz BGA-60 64 M x 8 5 ns 2.5 V 2.7 V 0 C + 70 C IS43R86400D Tray
ISSI DRAM 512M, 2.5V, DDR, 64Mx8, 200MHz, 60 ball BGA (8mmx13mm) RoHS, IT
Datu lapa
Noliktavā neesošas preces izpildes laiks 8 Nedēļas
Min.: 190
Vair.: 190

SDRAM - DDR 512 Mbit 8 bit 200 MHz BGA-60 64 M x 8 5 ns 2.5 V 2.7 V - 40 C + 85 C IS43R86400D Tray