e2PowerEdge Low VCE(sat) Transistors

onsemi e2PowerEdge Low VCE(sat) Transistors are miniature surface mount devices featuring ultra-low saturation voltage (VCE(sat)) and high current gain capability. These are designed for low-voltage, high-speed switching applications where affordable, efficient energy control is essential. Typical applications are DC−DC converters and power management in portable and battery-powered products such as cellular and cordless phones, PDAs, computers, printers, digital cameras, and MP3 players. Other applications are low-voltage motor controls in mass storage products such as disc and tape drives. These can be used for airbag deployment and instrument clusters in the automotive industry. The high current gain allows onsemi e2PowerEdge devices to be driven directly from PMU’s control outputs, and the linear gain (Beta) makes them ideal components in analog amplifiers.

Rezultāti: 23
Atlasīt Attēls Detaļas Nr. Raž. Apraksts Datu lapa Pieejamība Cenas noteikšana (EUR) Atlasiet rezultātus tabulā pēc vienības cenas, pamatojoties uz daudzumu. Daudz. RoHS ECAD modelis Tehnoloģija Montāžas veids Iepakojums / korpusa Tranzistora polaritāte Konfigurācija Maksimālā kolektora līdzstrāva Kolektors - starotāja spriegums, VCEO maks. Kolektors - pamatspriegums VCBO Starotājs - pamata spriegums VEBO Kolektora-starotāja piesātinājuma spriegums Pd - jaudas izkliede Pieauguma joslas platuma produkts fT Minimālā darba temperatūra Maksimālā darba temperatūra Kvalifikācija Sērija Iepakojums
onsemi Bipolārais transistors (BJT) MATCHED LO VCE(SAT) SOIC8 14 242Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 2 500

Si SMD/SMT SOIC-8 NPN Dual 3 A 40 V 40 V 6 V 82 mV 783 mW 100 MHz - 55 C + 150 C NSS40301MD Reel, Cut Tape, MouseReel
onsemi Bipolārais transistors (BJT) 100 V, 3.0 A Low VCE(sat) NPN Bipolar Junction Transistor, Automotive 10Ir noliktavā
6 000Paredzamais 15.05.2026
Min.: 1
Vair.: 1
Rullis: 3 000

LFPAK-4 NSS1C301CT Reel, Cut Tape
onsemi Bipolārais transistors (BJT) DUAL 40V LOW VCE XTR PNP 3 515Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 2 500

Si SMD/SMT SOIC-8 PNP Dual 3 A 40 V 40 V 7 V 135 mV 783 mW 100 MHz - 55 C + 150 C NSS40300DD Reel, Cut Tape, MouseReel
onsemi Bipolārais transistors (BJT) 40V 6A LOW VCE(SAT) DUAL PNP 2 356Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 2 500

Si SMD/SMT SOIC-8 PNP Dual 3 A 40 V 40 V 7 V 135 mV 783 mW 100 MHz - 55 C + 150 C NSS40300MD Reel, Cut Tape, MouseReel
onsemi Bipolārais transistors (BJT) NPN 40V LOW SAT LFPAK4 BP 2 988Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 3 000

LFPAK-4 NSS40301CT Reel, Cut Tape
onsemi Bipolārais transistors (BJT) COMP NPN/PNP LO VCE 40V 6A 5 886Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 2 500

Si SMD/SMT SOIC-8 NPN, PNP Dual 3 A 40 V 40 V 6 V, 7 V 82 mV, 135 mV 783 mW 100 MHz - 55 C + 150 C NSS40302PD Reel, Cut Tape, MouseReel
onsemi Bipolārais transistors (BJT) 12V 1A LOW VCE(SAT) WDFN3 2 800Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 3 000

Si SMD/SMT WDFN3 PNP Single 1 A 12 V 12 V 5 V 400 mV 1.1 W 200 MHz - 55 C + 150 C NSS12100UW Reel, Cut Tape, MouseReel
onsemi Bipolārais transistors (BJT) 100 V, 3.0 A Low VCE(sat) NPN Bipolar Junction Transistor 100 V, 3 A 80Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 3 000

LFPAK-4 NSS1C301CT Reel, Cut Tape
onsemi Bipolārais transistors (BJT) 20V DUAL LOW VCE(SA T) FOR 2 980Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 3 000

Si SMD/SMT WDFN6 Dual 20 V 20 V 250 mV NSS20200DM Reel, Cut Tape

onsemi Bipolārais transistors (BJT) LO V PNP TRANSISTOR 60V 4.0A 406Ir noliktavā
21 000Paredzamais 11.09.2026
Min.: 1
Vair.: 1
Rullis: 3 000

Si SMD/SMT SOT-23-3 PNP Single 2 A 60 V 80 V 7 V 180 mV 540 mW 100 MHz - 55 C + 150 C NSS60200LT1G Reel, Cut Tape, MouseReel
onsemi Bipolārais transistors (BJT) 60V SINGLE 2A LOWVC E(SAT) 2 900Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 3 000

Si SMD/SMT WDFN6 NPN Single 60 V 60 V 6 V 115 mV 1.8 W 180 MHz - 55 C + 150 C NSS60201SMT Reel, Cut Tape
onsemi Bipolārais transistors (BJT) 20V DUAL LOW VCE(SA T) FOR 2 980Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 3 000

Si SMD/SMT WDFN6 Dual 20 V 20 V 250 mV AEC-Q101 NSS20200DM Reel, Cut Tape
onsemi Bipolārais transistors (BJT) 20V DUAL LOW VCE(SA T) FOR 2 960Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 3 000

Si SMD/SMT WDFN-6 NPN Dual 20 V 20 V 7 V 330 mV 2.27 W 180 MHz - 55 C + 150 C AEC-Q101 NSS20201DM Reel, Cut Tape
onsemi Bipolārais transistors (BJT) 40 V, 3.0A Low VCE(sat) NPN Transistor, Automotive 2 985Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 3 000
LFPAK-4 NSS40301CT Reel, Cut Tape
onsemi Bipolārais transistors (BJT) COMP 40V NPN/PNP LO 5Ir noliktavā
32 500Pēc pasūtījuma
Min.: 1
Vair.: 1
Rullis: 2 500

Si SMD/SMT SOIC-8 NPN, PNP Dual 3 A 40 V 40 V 6 V, 7 V 82 mV, 135 mV 653 mW 100 MHz - 55 C + 150 C AEC-Q101 NSS40302P Reel, Cut Tape, MouseReel
onsemi Bipolārais transistors (BJT) DUAL 60V 1A LOWVCESA 488Ir noliktavā
6 000Paredzamais 27.11.2026
Min.: 1
Vair.: 1
Rullis: 3 000

Si SMD/SMT WDFN6 NPN Dual 1 A 60 V 60 V 6 V 200 mV 2.27 W 180 MHz - 55 C + 150 C AEC-Q101 NSS60101DMT Reel, Cut Tape, MouseReel
onsemi Bipolārais transistors (BJT) DUAL 60V 1A LOWVCESA
6 000Paredzamais 24.02.2026
Min.: 1
Vair.: 1
Rullis: 3 000

Si SMD/SMT NPN Single 1 A 60 V 60 V 6 V 130 mV 2.27 W 180 MHz - 55 C + 150 C NSS60101DMT Reel, Cut Tape, MouseReel

onsemi Bipolārais transistors (BJT) 60V PNP LOW VCE(SAT) XTR
9 000Paredzamais 24.03.2026
Min.: 1
Vair.: 1
Rullis: 3 000

Si SMD/SMT SOT-23-3 PNP Single 2 A 60 V 80 V 7 V 170 mV 460 mW 100 MHz - 55 C + 150 C AEC-Q100 NSS60200LT1G Reel, Cut Tape, MouseReel
onsemi Bipolārais transistors (BJT) 20V DUAL LOW VCE(SA T) FOR 9 000Pieejams rūpnīcas krājums
Min.: 1
Vair.: 1
Rullis: 3 000

Si SMD/SMT WDFN-6 NPN Dual 20 V 20 V 7 V 330 mV 2.27 W 180 MHz - 55 C + 150 C NSS20201DM Reel, Cut Tape
onsemi Bipolārais transistors (BJT) DUAL 60V 2A LOWVCES AT PNP 7Pieejams rūpnīcas krājums
Min.: 1
Vair.: 1
Rullis: 3 000

Si SMD/SMT WDFN6 PNP Dual 60 V 60 V 6 V 365 mV 1.8 W 155 MHz - 55 C + 150 C AEC-Q101 NSS60200DM Reel, Cut Tape
onsemi Bipolārais transistors (BJT) WDFN3 2*2 LOW VCE Noliktavā neesošas preces izpildes laiks 33 Nedēļas
Min.: 1
Vair.: 1
Rullis: 3 000

Si SMD/SMT WDFN-3 PNP Single 12 V 12 V 5 V 30 mV 740 mW 200 MHz - 55 C + 150 C AEC-Q101 NSS12100UW Reel, Cut Tape, MouseReel
onsemi Bipolārais transistors (BJT) DUAL MATCHED 40V PNP LOW Noliktavā neesošas preces izpildes laiks 26 Nedēļas
Min.: 1
Vair.: 1
Rullis: 2 500

Si SOIC-8 PNP AEC-Q100 NSS40300MD Reel, Cut Tape
onsemi Bipolārais transistors (BJT) SOIC8 MATCHED LO VCE(SAT) Noliktavā neesošas preces izpildes laiks 37 Nedēļas
Min.: 2 500
Vair.: 2 500
Rullis: 2 500

Si SOIC-8 AEC-Q101 NSS40301MD Reel