U-MOSIV MOSFETs

Toshiba U-MOSIV MOSFETs are offered in logic-level gate drive, low-voltage gate drive, and 10V gate drive variants in N-channel and P-channel polarity. The U-MOSIV MOSFETs offer low drain-source ON-resistance and low leakage current. These devices are offered in through-hole and surface mount packages and are ideal for motor driver, DC-DC converter, and switching voltage regulator applications.

Rezultāti: 12
Atlasīt Attēls Detaļas Nr. Raž. Apraksts Datu lapa Pieejamība Cenas noteikšana (EUR) Atlasiet rezultātus tabulā pēc vienības cenas, pamatojoties uz daudzumu. Daudz. RoHS ECAD modelis Tehnoloģija Montāžas veids Iepakojums / korpusa Tranzistora polaritāte Kanālu skaits VDS - DS pārtraukuma spriegums Id - nepārtraukta noplūdes strāva RDS ieslēgts - noplūdes avota pretestība VGS - kanāla-avota spriegums VGS TH - kanāla-avota sliekšņa spriegums Qg - kanāla lādiņš Minimālā darba temperatūra Maksimālā darba temperatūra Pd - jaudas izkliede Kanāla režīms Kvalifikācija Tirdzniecības nosaukums Iepakojums
Toshiba MOSFET Pb-F POWER MOSFET TRANSISTOR PS-8 V=-40 PD=2.01W F=1MHZ 17 168Ir noliktavā
Min.: 1
Vair.: 1
: 3 000

Si SMD/SMT PS-8 P-Channel 1 Channel 40 V 8 A 18 mOhms - 20 V, 10 V 2 V 44.6 nC - 55 C + 175 C 2.01 W Enhancement AEC-Q101 U-MOSIV Reel, Cut Tape, MouseReel
Toshiba MOSFET Pb-F POWER MOSFET TRANSISTOR PS-8 PD=1.96W F=1MHZ 1 836Ir noliktavā
Min.: 1
Vair.: 1
: 3 000

Si SMD/SMT PS-8 N-Channel 1 Channel 40 V 5 A 31.8 mOhms - 20 V, 20 V 2 V 11.8 nC - 55 C + 175 C 1.96 W Enhancement AEC-Q101 U-MOSIV Reel, Cut Tape, MouseReel
Toshiba MOSFET Small Signal Mosfet 18 889Ir noliktavā
Min.: 1
Vair.: 1
: 3 000

Si SMD/SMT SOT-23F-3 N-Channel 1 Channel 60 V 2.5 A 107 mOhms - 20 V, 20 V 2.8 V 7 nC - 55 C + 150 C 2 W Enhancement AEC-Q101 U-MOSIV Reel, Cut Tape, MouseReel
Toshiba MOSFET Small Signal MOSFET N-ch VDSS=30V, VGSS=+/-20V, ID=6.0A, RDS(ON)=0.0415Ohm @ 4.5V, in UFM package 3 209Ir noliktavā
Min.: 1
Vair.: 1
: 3 000

Si SMD/SMT UFM-3 N-Channel 1 Channel 30 V 6 A 27.6 mOhms - 20 V, 20 V 2.5 V 10.1 nC - 55 C + 150 C 800 mW Enhancement AEC-Q101 U-MOSIV Reel, Cut Tape, MouseReel
Toshiba MOSFET N-Channel Mosfet 3 506Ir noliktavā
Min.: 1
Vair.: 1
: 3 000

Si SMD/SMT SOT-23-3 N-Channel 1 Channel 38 V 2 A 150 mOhms - 20 V, 20 V 700 mV 3 nC - 55 C + 150 C 1 W Enhancement AEC-Q101 U-MOSIV Reel, Cut Tape, MouseReel
Toshiba MOSFET LowON Res MOSFET ID=2A VDSS=38V 4 258Ir noliktavā
Min.: 1
Vair.: 1
: 3 000

Si SMD/SMT SOT-23F-3 N-Channel 1 Channel 38 V 2 A 280 mOhms - 20 V, 20 V 1.4 V 2.5 nC - 55 C + 150 C 1 W Enhancement AEC-Q101 U-MOSIV Reel, Cut Tape, MouseReel
Toshiba MOSFET LowON Res MOSFET ID=4.4A VDSS=30V 2 900Ir noliktavā
Min.: 1
Vair.: 1
: 3 000

Si SMD/SMT UF-6 N-Channel 1 Channel 30 V 4.4 A 25 mOhms - 20 V, 20 V 1.3 V 12.4 nC - 55 C + 150 C 500 mW Enhancement AEC-Q101 U-MOSIV Reel, Cut Tape, MouseReel
Toshiba MOSFET ES6 S-MOS TRSTR Pd: 0.15W F: 1MHz 4 151Ir noliktavā
32 000Pēc pasūtījuma
Min.: 1
Vair.: 1
: 4 000

Si SMD/SMT ES6-6 N-Channel 2 Channel 60 V 200 mA 2.1 Ohms - 20 V, 20 V 1.5 V - 55 C + 150 C 150 mW Enhancement U-MOSIV Reel, Cut Tape, MouseReel
Toshiba MOSFET N-Ch MOS 60A 60V 88W 2900pF 0.008 1 252Ir noliktavā
Min.: 1
Vair.: 1
: 2 000

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 60 V 60 A 8 mOhms - 20 V, 20 V 2 V 60 nC - 55 C + 175 C 88 W Enhancement AEC-Q100 U-MOSIV Reel, Cut Tape, MouseReel
Toshiba MOSFET N-Ch MOS 8A 60V 25W 400pF 0.054 2 325Ir noliktavā
Min.: 1
Vair.: 1
: 2 000

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 60 V 8 A 54 mOhms - 20 V, 20 V 2 V 10 nC - 55 C + 175 C 25 W Enhancement AEC-Q100 U-MOSIV Reel, Cut Tape, MouseReel
Toshiba MOSFET LowON Res MOSFET ID=2A VDSS=34V Nav noliktavā
Min.: 1
Vair.: 1
: 3 000

Si SMD/SMT UFM-3 N-Channel 1 Channel 34 V 2 A 240 mOhms - 20 V, 20 V 700 mV + 150 C 1 W Enhancement AEC-Q101 U-MOSIV Reel, Cut Tape
Toshiba MOSFET N-Ch MOS 35A 40V 58W 1370pF 0.0103 Nav noliktavā
Min.: 2 000
Vair.: 2 000
: 2 000

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 40 V 35 A 10.3 mOhms 58 W AEC-Q100 U-MOSIV Reel