IPG20N04 / IPG20N06 OptiMOS-™T2 Power Transistors

Infineon Technologies IPG20N06 OptiMOS™ Power Transistors and IPG20N04 / IPG20N06 OptiMOS™-T2 Power Transistors are the newest additions to the OptiMOS product line. The Infineon IPG20N06 OptiMOS (55V), IPG20N06 OptiMOS-T2 (60V), and IPG20N04 OptiMOS-T2 (40V) devices are dual N-channel devices in a TDSON-8 package. These Infineon OptiMOS devices have a maximum operating temperature of 175ºC. Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make Infineon N-Channel OptiMOS™ Power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications.

Rezultāti: 9
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Infineon Technologies MOSFET N-Ch 40V 20A TDSON-8 OptiMOS-T2 7 282Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 5 000
Si SMD/SMT TDSON-8 N-Channel 2 Channel 40 V 20 A 7.2 mOhms, 7.2 mOhms - 16 V, 16 V 1.2 V 39 nC - 55 C + 175 C 54 W Enhancement AEC-Q100 OptiMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET N-Ch 55V 20A TDSON-8 OptiMOS 2 982Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 5 000
Si SMD/SMT TDSON-8 N-Channel 2 Channel 55 V 20 A 50 mOhms - 20 V, 20 V 1.6 V 17 nC - 55 C + 175 C 51 W Enhancement AEC-Q100 OptiMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET N-Ch 40V 20A TDSON-8 OptiMOS-T2 9 352Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 5 000

Si SMD/SMT TDSON-8 N-Channel 2 Channel 40 V 20 A 7.6 mOhms - 20 V, 20 V 3 V 36 nC - 55 C + 175 C 65 W Enhancement AEC-Q100 OptiMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET N-Ch 40V 20A TDSON-8 OptiMOS-T2 11 592Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 5 000

Si SMD/SMT TDSON-8 N-Channel 2 Channel 40 V 20 A 11.6 mOhms - 16 V, 16 V 1.7 V 26 nC - 55 C + 175 C 41 W Enhancement AEC-Q100 OptiMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET N-Ch 55V 20A TDSON-8 OptiMOS 4 289Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 5 000

Si SMD/SMT TDSON-8 N-Channel 2 Channel 55 V 20 A 35 mOhms - 20 V, 20 V 1.6 V 23 nC - 55 C + 175 C 65 W Enhancement AEC-Q100 OptiMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET N-Ch 55V 20A TDSON-8 OptiMOS 2 640Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 5 000

Si SMD/SMT TDSON-8 N-Channel 2 Channel 55 V 20 A 65 mOhms - 20 V, 20 V 1.6 V 12 nC - 55 C + 175 C 43 W Enhancement AEC-Q100 OptiMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET N-Ch 40V 20A TDSON-8 OptiMOS-T2 9 144Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 5 000

Si SMD/SMT TDSON-8 N-Channel 2 Channel 40 V 20 A 12.2 mOhms - 20 V, 20 V 3 V 18 nC - 55 C + 175 C 41 W Enhancement AEC-Q100 OptiMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET N-Ch 40V 20A TDSON-8 OptiMOS-T2 1 760Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 5 000
Si SMD/SMT TDSON-8 N-Channel 2 Channel 40 V 20 A 8 mOhms - 16 V, 16 V 1.7 V 50 nC - 55 C + 175 C 65 W Enhancement AEC-Q100 OptiMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET N-Ch 60V 20A TDSON-8 OptiMOS-T2 2 284Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 5 000
Si SMD/SMT TDSON-8 N-Channel 2 Channel 60 V 20 A 26 mOhms - 16 V, 16 V 1.2 V 20 nC - 55 C + 175 C 33 W Enhancement AEC-Q101 OptiMOS Reel, Cut Tape, MouseReel