High-Performance SiC FETs

onsemi High-Performance SiC FETs deliver best-in-class switching speed, lower switching losses, higher efficiency, and excellent cost-effectiveness. The components are offered in standard thru-hole (including Kelvin) and surface mount packages. The family comprises the UF4C/SC, UJ4C/SC, UJ3C, and UF3C/SC series and is based on a unique cascode configuration, where a high-performance SiC JFET is co-packaged with a cascode-optimized Si-MOSFET to produce a standard gate drive SiC device.

Rezultāti: 71
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Daudz. RoHS ECAD modelis Montāžas veids
Iepakojums / korpusa
Tranzistora polaritāte
Kanālu skaits
VDS - DS pārtraukuma spriegums
Id - nepārtraukta noplūdes strāva
RDS ieslēgts - noplūdes avota pretestība
VGS - kanāla-avota spriegums
VGS TH - kanāla-avota sliekšņa spriegums
Qg - kanāla lādiņš
Minimālā darba temperatūra
Maksimālā darba temperatūra
Pd - jaudas izkliede
Kanāla režīms
Kvalifikācija
Tirdzniecības nosaukums
onsemi SiC MOSFET 750V/18MOSICFETG4TO263-7
Datu lapa
1 240Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 800

SMD/SMT D2PAK-7 N-Channel 1 Channel 750 V 72 A 18 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 259 W Enhancement SiC FET
onsemi SiC MOSFET 750V/9MOSICFETG4TO263-7
Datu lapa
688Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 800

SMD/SMT D2PAK-7 N-Channel 1 Channel 750 V 106 A 9 mOhms - 20 V, + 20 V 5.5 V 75 nC - 55 C + 175 C 375 W Enhancement SiC FET
onsemi SiC MOSFET 650V/40MOSICFETG3TO247
Datu lapa
3 297Ir noliktavā
Min.: 1
Vair.: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 54 A 52 mOhms - 25 V, + 25 V 4 V 43 nC - 55 C + 175 C 326 W Enhancement AEC-Q101 SiC FET
onsemi SiC MOSFET 650V/40MOSICFETG3TO247
Datu lapa
1 295Ir noliktavā
Min.: 1
Vair.: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 54 A 42 mOhms - 25 V, + 25 V 4 V 51 nC - 55 C + 175 C 326 W Enhancement AEC-Q101 SiC FET
onsemi SiC MOSFET 750V/33MOSICFETG4TO247-3
Datu lapa
404Ir noliktavā
Min.: 1
Vair.: 1

Through Hole TO-247-3 N-Channel 1 Channel 750 V 47 A 41 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 242 W Enhancement AEC-Q101 SiC FET
onsemi SiC MOSFET 650V/80MOSICFETG3TO247
Datu lapa
583Ir noliktavā
Min.: 1
Vair.: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 31 A 100 mOhms - 25 V, + 25 V 4 V 51 nC - 55 C + 175 C 190 W Enhancement AEC-Q101 SiC FET
onsemi SiC MOSFET 750V/33MOSICFETG4TO263-7
Datu lapa
490Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 800

SMD/SMT D2PAK-7 N-Channel 1 Channel 750 V 44 A 41 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 197 W Enhancement SiC FET
onsemi SiC MOSFET 750V/44MOSICFETG4TO263-7
Datu lapa
764Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 800

SMD/SMT D2PAK-7 N-Channel 1 Channel 750 V 35.6 A 56 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 181 W Enhancement SiC FET
onsemi SiC MOSFET 750V/18MOSICFETG4TO247-4
Datu lapa
626Ir noliktavā
Min.: 1
Vair.: 1

Through Hole TO-247-4 N-Channel 1 Channel 750 V 81 A 23 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 385 W Enhancement AEC-Q101 SiC FET
onsemi SiC MOSFET 750V/23MOSICFETG4TO247
Datu lapa
593Ir noliktavā
Min.: 1
Vair.: 1

Through Hole TO-247-3 N-Channel 1 Channel 750 V 66 A 29 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 306 W Enhancement AEC-Q101 SiC FET
onsemi SiC MOSFET 650V/30MOSICFETG3TO247
Datu lapa
623Ir noliktavā
Min.: 1
Vair.: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 85 A 35 mOhms - 25 V, + 25 V 4 V 51 nC - 55 C + 175 C 441 W Enhancement AEC-Q101 SiC FET
onsemi SiC MOSFET 750V/44MOSICFETG4TO247
Datu lapa
553Ir noliktavā
Min.: 1
Vair.: 1

Through Hole TO-247-3 N-Channel 1 Channel 750 V 37.4 A 56 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 203 W Enhancement AEC-Q101 SiC FET
onsemi SiC MOSFET 750V/60MOSICFETG4TO247-3
Datu lapa
2 086Ir noliktavā
Min.: 1
Vair.: 1

Through Hole TO-247-3 N-Channel 1 Channel 750 V 28 A 74 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 155 W Enhancement AEC-Q101 SiC FET
onsemi SiC MOSFET 750V/23MOSICFETG4TO263-7
Datu lapa
812Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 800

SMD/SMT D2PAK-7 N-Channel 1 Channel 750 V 64 A 29 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 278 W Enhancement SiC FET
onsemi SiC MOSFET 650V/30MOSICFETG3TO220
Datu lapa
902Ir noliktavā
Min.: 1
Vair.: 1

Through Hole TO-220-3 N-Channel 1 Channel 650 V 85 A 35 mOhms - 25 V, + 25 V 5 V 51 nC - 55 C + 175 C 441 W Enhancement AEC-Q101 SiC FET
onsemi SiC MOSFET 1200V/40MOSICFETG3TO24
Datu lapa
686Ir noliktavā
Min.: 1
Vair.: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 65 A 45 mOhms - 25 V, + 25 V 4 V 51 nC - 55 C + 175 C 429 W Enhancement AEC-Q101 SiC FET
onsemi SiC MOSFET 750V/23MOSICFETG4TO247
Datu lapa
838Ir noliktavā
Min.: 1
Vair.: 1

Through Hole TO-247-4 N-Channel 1 Channel 750 V 66 A 29 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 306 W Enhancement AEC-Q101 SiC FET
onsemi SiC MOSFET 750V/33MOSICFETG4TO247-4
Datu lapa
319Ir noliktavā
Min.: 1
Vair.: 1

Through Hole TO-247-4 N-Channel 1 Channel 750 V 47 A 41 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 242 W Enhancement AEC-Q101 SiC FET
onsemi SiC MOSFET 650V/80MOSICFETG3TO263
Datu lapa
449Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 800

SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 650 V 25 A 100 mOhms - 25 V, + 25 V 4 V 51 nC - 55 C + 175 C 115 W Enhancement AEC-Q101 SiC FET
onsemi SiC MOSFET 1200V/40MOSICFETG3TO263-7
Datu lapa
270Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 800

SMD/SMT D2PAK-7 N-Channel 1 Channel 1.2 kV 47 A 35 mOhms - 25 V, + 25 V 6 V 43 nC - 55 C + 175 C 214 W Enhancement SiC FET
onsemi SiC MOSFET 1200V/80MOSICFETG3TO24
Datu lapa
1 117Ir noliktavā
Min.: 1
Vair.: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 33 A 100 mOhms - 25 V, + 25 V 6 V 51 nC - 55 C + 175 C 254.2 W Enhancement AEC-Q101 SiC FET
onsemi SiC MOSFET 650V/7MOSICFETG3TO247-4
Datu lapa
255Ir noliktavā
Min.: 1
Vair.: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 120 A 9 mOhms - 12 V, + 12 V 6 V 214 nC - 55 C + 175 C 789 W Enhancement AEC-Q101 SiC FET
onsemi SiC MOSFET 1200V/16MOSICFETG3TO247-3
Datu lapa
205Ir noliktavā
Min.: 1
Vair.: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 107 A 21 mOhms - 20 V, + 20 V 4 V 218 nC - 55 C + 175 C 517 W Enhancement AEC-Q101 SiC FET
onsemi SiC MOSFET 1200V/80MOSICFETG3TO263-7
Datu lapa
726Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 800

SMD/SMT D2PAK-7 N-Channel 1 Channel 1.2 kV 28.8 A 85 mOhms - 25 V, + 25 V 6 V 23 nC - 55 C + 175 C 190 W Enhancement SiC FET
onsemi SiC MOSFET 650V/80MOSICFETG3TO263-7
Datu lapa
210Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 800

SMD/SMT D2PAK-7 N-Channel 1 Channel 650 V 27 A 85 mOhms - 25 V, + 25 V 6 V 23 nC - 55 C + 175 C 136.4 W Enhancement SiC FET