Rezultāti: 23
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Daudz. RoHS ECAD modelis Tehnoloģija
Montāžas veids
Iepakojums / korpusa
Tranzistora polaritāte
Kanālu skaits
VDS - DS pārtraukuma spriegums
Id - nepārtraukta noplūdes strāva
RDS ieslēgts - noplūdes avota pretestība
VGS - kanāla-avota spriegums
VGS TH - kanāla-avota sliekšņa spriegums
Qg - kanāla lādiņš
Minimālā darba temperatūra
Maksimālā darba temperatūra
Pd - jaudas izkliede
Kanāla režīms
Kvalifikācija
Tirdzniecības nosaukums
Iepakojums
Infineon Technologies MOSFET N-Ch 600V 31A D2PAK-2 CoolMOS CPA
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Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 600 V 31 A 90 mOhms - 20 V, 20 V 2.5 V 80 nC - 40 C + 150 C 255 W Enhancement AEC-Q100 CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET N-Ch 600V 31A D2PAK-2 CoolMOS CPA
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Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 600 V 31 A 90 mOhms - 20 V, 20 V 2.5 V 80 nC - 40 C + 150 C 255 W Enhancement AEC-Q100 CoolMOS Reel, Cut Tape, MouseReel

Infineon Technologies MOSFET N-Ch 650V 31.2A TO247-3
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Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 31.2 A 99 mOhms - 20 V, 20 V 3.5 V 118 nC - 40 C + 150 C 277.8 W Enhancement AEC-Q100 CoolMOS Tube

Infineon Technologies MOSFET N-Ch 650V 63.3A TO247-3
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Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 63.3 A 43 mOhms - 20 V, 20 V 3.5 V 270 nC - 40 C + 150 C 500 W Enhancement AEC-Q100 CoolMOS Tube
Infineon Technologies MOSFET N-Ch 650V 6A D2PAK-2
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Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 650 V 6 A 594 mOhms - 20 V, 20 V 3.5 V 20 nC - 40 C + 150 C 62.5 W Enhancement AEC-Q100 CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET N-Ch 650V 99.6A D2PAK-2
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Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 650 V 31.2 A 99 mOhms - 20 V, 20 V 3.5 V 118 nC - 40 C + 150 C 277.8 W Enhancement AEC-Q100 CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET N-Ch 650V 11.4A D2PAK-2
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Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 650 V 11.4 A 280 mOhms - 20 V, 20 V 3.5 V 41 nC - 40 C + 150 C 104.2 W Enhancement AEC-Q100 CoolMOS Reel, Cut Tape, MouseReel

Infineon Technologies MOSFET N-Ch 600V 60A TO247-3 CoolMOS CPA
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Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 60 A 45 mOhms - 20 V, 20 V 3 V 190 nC - 40 C + 150 C 431 W Enhancement AEC-Q100 CoolMOS Tube

Infineon Technologies MOSFET N-Ch 650V 43.3A TO247-3
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391Ir noliktavā
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Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 43.3 A 72 mOhms - 20 V, 20 V 3.5 V 161 nC - 40 C + 150 C 391 W Enhancement AEC-Q100 CoolMOS Tube
Infineon Technologies MOSFET N-Ch 650V 57.2A D2PAK-2
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Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 650 V 17.5 A 171 mOhms - 20 V, 20 V 3.5 V 68 nC - 40 C + 150 C 151 W Enhancement AEC-Q100 CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET N-Ch 650V 57.2A D2PAK-2
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Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 650 V 17.5 A 171 mOhms - 20 V, 20 V 3.5 V 68 nC - 40 C + 150 C 151 W Enhancement AEC-Q100 CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET N-Ch 650V 11.4A D2PAK-2
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Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 650 V 11.4 A 280 mOhms - 20 V, 20 V 3.5 V 41 nC - 40 C + 150 C 104.2 W Enhancement AEC-Q100 CoolMOS Reel, Cut Tape, MouseReel

Infineon Technologies MOSFET AUTOMOTIVE_COOLMOS
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87Ir noliktavā
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Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 31 A 90 mOhms - 20 V, 20 V 2.5 V 80 nC - 40 C + 150 C 255 W Enhancement AEC-Q101 CoolMOS Tube

Infineon Technologies MOSFET N-Ch 650V 22.4A TO247-3
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317Ir noliktavā
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Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 22.4 A 150 mOhms - 20 V, 20 V 3.5 V 86 nC - 40 C + 150 C 195.3 W Enhancement AEC-Q100 CoolMOS Tube

Infineon Technologies MOSFET AUTOMOTIVE_COOLMOS
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60Ir noliktavā
240Paredzamais 04.03.2026
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Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 31 A 90 mOhms - 20 V, 20 V 2.5 V 80 nC - 40 C + 150 C 255 W Enhancement AEC-Q101 CoolMOS Tube
Infineon Technologies MOSFET N-Ch 650V 6A DPAK-2
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1 671Ir noliktavā
2 500Paredzamais 09.03.2026
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Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 650 V 6 A 594 mOhms - 20 V, 20 V 3.5 V 20 nC - 40 C + 150 C 62.5 W Enhancement AEC-Q100 CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET N-Ch 650V 31.2A TO220-3
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415Ir noliktavā
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Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 31.2 A 110 mOhms - 20 V, 20 V 3 V 118 nC - 40 C + 150 C 277.8 W Enhancement AEC-Q100 CoolMOS Tube

Infineon Technologies MOSFET N-Ch 650V 43.3A TO247-3
Datu lapa
10Ir noliktavā
480Paredzamais 19.03.2026
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Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 43.3 A 72 mOhms - 20 V, 20 V 3.5 V 161 nC - 40 C + 150 C 391 W Enhancement AEC-Q100 CoolMOS Tube

Infineon Technologies MOSFET N-Ch 650V 31.2A TO247-3
Datu lapa
201Ir noliktavā
Min.: 1
Vair.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 31.2 A 99 mOhms - 20 V, 20 V 3.5 V 118 nC - 40 C + 150 C 277.8 W Enhancement AEC-Q100 CoolMOS Tube
Infineon Technologies MOSFET N-Ch 650V 99.6A D2PAK-2
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Noliktavā neesošas preces izpildes laiks 8 Nedēļas
Min.: 1 000
Vair.: 1 000
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Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 650 V 31.2 A 99 mOhms - 20 V, 20 V 3.5 V 118 nC - 40 C + 150 C 277.8 W Enhancement AEC-Q100 CoolMOS Reel

Infineon Technologies MOSFET N-Ch 650V 63.3A TO247-3
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Noliktavā neesošas preces izpildes laiks 10 Nedēļas
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Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 63.3 A 43 mOhms - 20 V, 20 V 3.5 V 270 nC - 40 C + 150 C 500 W Enhancement AEC-Q100 CoolMOS Tube
Infineon Technologies MOSFET N-Ch 650V 6A DPAK-2
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Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 650 V 6 A 594 mOhms - 20 V, 20 V 3.5 V 20 nC - 40 C + 150 C 62.5 W Enhancement AEC-Q100 CoolMOS Reel
Infineon Technologies MOSFET N-Ch 650V 8.7A DPAK-2
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Noliktavā neesošas preces izpildes laiks 18 Nedēļas
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Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 650 V 8.7 A 420 mOhms - 20 V, 20 V 4 V 32 nC - 55 C + 175 C 83.3 W Enhancement AEC-Q100 CoolMOS Reel