DMN53xx N-Channel Enhancement Mode MOSFETs

Diodes Incorporated DMN53xx N-Channel Enhancement Mode MOSFETs are designed to minimize the on-state resistance RDS(ON) while maintaining superior switching performance. ESD protected to 2KV, these new generation MOSFETs feature low on-resistance, very low gate threshold voltage, low input capacitance, fast switching speeds, and low input/output leakage. Qualified to AEC-Q101 Standards for High Reliability, DMN53xx N-Channel Enhancement Mode MOSFETs are ideal for high-efficiency power management applications.

Rezultāti: 10
Atlasīt Attēls Detaļas Nr. Raž. Apraksts Datu lapa Pieejamība Cenas noteikšana (EUR) Atlasiet rezultātus tabulā pēc vienības cenas, pamatojoties uz daudzumu. Daudz. RoHS ECAD modelis Tehnoloģija Montāžas veids Iepakojums / korpusa Tranzistora polaritāte Kanālu skaits VDS - DS pārtraukuma spriegums Id - nepārtraukta noplūdes strāva RDS ieslēgts - noplūdes avota pretestība VGS - kanāla-avota spriegums VGS TH - kanāla-avota sliekšņa spriegums Qg - kanāla lādiņš Minimālā darba temperatūra Maksimālā darba temperatūra Pd - jaudas izkliede Kanāla režīms Kvalifikācija Iepakojums

Diodes Incorporated MOSFET N-CHANNEL MOSFET 641Ir noliktavā
10 000Paredzamais 19.06.2026
Min.: 1
Vair.: 1
Rullis: 10 000

Si SMD/SMT SOT-23-3 N-Channel 1 Channel 50 V 500 mA 1.6 Ohms - 20 V, 20 V 1.5 V 1.2 nC - 55 C + 150 C 420 mW Enhancement Reel, Cut Tape, MouseReel

Diodes Incorporated MOSFET N-Ch 50Vds 20Vgs FET Enh Mode 46pF 1.5Vgs 1 493Ir noliktavā
219 000Pēc pasūtījuma
Min.: 1
Vair.: 1
Rullis: 3 000

Si SMD/SMT SOT-23-3 N-Channel 1 Channel 50 V 500 mA 1.6 Ohms - 20 V, 20 V 800 mV 1.2 nC - 55 C + 150 C 360 mW Enhancement Reel, Cut Tape, MouseReel

Diodes Incorporated MOSFET N-CHANNEL MOSFET 579Ir noliktavā
20 000Paredzamais 22.06.2026
Min.: 1
Vair.: 1
Rullis: 10 000

Si SMD/SMT SOT-363-6 N-Channel 2 Channel 50 V 360 mA 1.6 Ohms - 20 V, 20 V 800 mV 600 pC - 55 C + 150 C 310 mW Enhancement Reel, Cut Tape, MouseReel

Diodes Incorporated MOSFET N-Ch 50Vds 20Vgs FET Enh Mode 46pF 1.5Vgs 3 664Ir noliktavā
78 000Pēc pasūtījuma
Min.: 1
Vair.: 1
Rullis: 3 000

Si SMD/SMT SOT-363-6 N-Channel 2 Channel 50 V 360 mA 1.6 Ohms - 20 V, 20 V 800 mV 600 pC - 55 C + 150 C 310 mW Enhancement Reel, Cut Tape, MouseReel

Diodes Incorporated MOSFET 2N7002 Family 14 607Ir noliktavā
20 000Paredzamais 05.06.2026
Min.: 1
Vair.: 1
Rullis: 10 000

Si SMD/SMT SOT-23-3 N-Channel 1 Channel 50 V 500 mA 1.6 Ohms - 20 V, 20 V 800 mV 600 pC - 55 C + 150 C 540 mW Enhancement AEC-Q101 Reel, Cut Tape, MouseReel

Diodes Incorporated MOSFET N-Ch. 50V 500mA AEC-Q101 13 523Ir noliktavā
9 000Paredzamais 17.06.2026
Min.: 1
Vair.: 1
Rullis: 3 000

Si SMD/SMT SOT-23-3 N-Channel 1 Channel 50 V 500 mA 1.6 Ohms - 20 V, 20 V 800 mV 600 pC - 55 C + 150 C 540 mW Enhancement AEC-Q101 Reel, Cut Tape, MouseReel
Diodes Incorporated MOSFET FET Enhancement Mode N-Ch .3A 2.5Vgs 56pF 9 884Ir noliktavā
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Vair.: 1
Rullis: 10 000

Si SMD/SMT SOT-323-3 N-Channel 1 Channel 50 V 360 mA 2 Ohms - 20 V, 20 V 800 mV 1.2 nC - 55 C + 150 C 420 mW Enhancement Reel, Cut Tape, MouseReel

Diodes Incorporated MOSFET FET Enhancement Mode N-Ch .3A 2.5Vgs 56p
38 072Pēc pasūtījuma
Min.: 1
Vair.: 1
Rullis: 3 000

Si SMD/SMT SOT-323-3 N-Channel 1 Channel 50 V 360 mA 2 Ohms - 20 V, 20 V 800 mV 1.2 nC - 55 C + 150 C 420 mW Enhancement Reel, Cut Tape, MouseReel

Diodes Incorporated MOSFET N-Ch 50Vds 12Vgs FET Enh Mode 50pF 1Vgs
5 650Paredzamais 20.07.2026
Min.: 1
Vair.: 1
Rullis: 3 000

Si SMD/SMT SOT-23-3 N-Channel 1 Channel 50 V 300 mA 2 Ohms - 12 V, 12 V 400 mV 600 pC - 55 C + 150 C 520 mW Enhancement Reel, Cut Tape, MouseReel

Diodes Incorporated MOSFET N-CHANNEL MOSFET 80 000Pieejams rūpnīcas krājums
Min.: 1
Vair.: 1
Rullis: 10 000

Si SMD/SMT SOT-23-3 N-Channel 1 Channel 50 V 300 mA 2 Ohms - 12 V, 12 V 400 mV 600 pC - 55 C + 150 C 520 mW Enhancement Reel, Cut Tape, MouseReel