CoolMOS™ CE Power MOSFETs

Infineon's CoolMOS™ CE Power MOSFETs are a technology platform of high voltage power MOSFETs that are designed according to the super junction principle (SJ) and conceived to fulfill consumer requirements. CoolMOS™ CE portfolio offers 500V, 600V, 650V, 700V, and 800V devices targeting low power chargers for mobile devices and power tools, adapters for notebook and laptops, LCD, LED TV and LED lighting. This new series of CoolMOS™ is cost-optimized to meet typical requirements in consumers with no compromise on proven CoolMOS™ quality and reliability while still being price attractive.

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Daudz. RoHS ECAD modelis Tehnoloģija
Montāžas veids
Iepakojums / korpusa
Tranzistora polaritāte
Kanālu skaits
VDS - DS pārtraukuma spriegums
Id - nepārtraukta noplūdes strāva
RDS ieslēgts - noplūdes avota pretestība
VGS - kanāla-avota spriegums
VGS TH - kanāla-avota sliekšņa spriegums
Qg - kanāla lādiņš
Minimālā darba temperatūra
Maksimālā darba temperatūra
Pd - jaudas izkliede
Kanāla režīms
Tirdzniecības nosaukums
Iepakojums
Infineon Technologies MOSFET N-Ch 650V 21A D2PAK-2 CoolMOS CP
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2 498Ir noliktavā
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Rullis: 1 000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 600 V 21 A 150 mOhms - 20 V, 20 V 2.5 V 52 nC - 55 C + 150 C 192 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET N-Ch 650V 31A D2PAK-2 CoolMOS CP
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1 130Ir noliktavā
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Rullis: 1 000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 600 V 31 A 90 mOhms - 20 V, 20 V 2.5 V 80 nC - 55 C + 150 C 255 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET CONSUMER
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4 025Ir noliktavā
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Rullis: 2 500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 600 V 14.7 A 400 mOhms - 20 V, 20 V 3 V 32 nC - 40 C + 150 C 112 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET CONSUMER
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6 897Ir noliktavā
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Rullis: 2 500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 600 V 8.4 A 800 mOhms - 20 V, 20 V 3 V 17.2 nC - 40 C + 150 C 74 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET N-Ch 650V 16A D2PAK-2 CoolMOS CP
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1 963Ir noliktavā
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Rullis: 1 000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 600 V 16 A 180 mOhms - 20 V, 20 V 2.5 V 43 nC - 55 C + 150 C 139 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET N-Ch 550V 23A D2PAK-2 CoolMOS CP
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269Ir noliktavā
1 000Paredzamais 06.03.2026
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Rullis: 1 000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 500 V 23 A 130 mOhms - 20 V, 20 V 2.5 V 64 nC - 55 C + 150 C 192 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET CONSUMER
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4 707Ir noliktavā
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Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 500 V 6.6 A 2.25 Ohms - 20 V, 20 V 3 V 10.5 nC - 55 C + 150 C 53 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET N-Ch 600V 16.4A ThinPAK-4 CoolMOS CP
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2 495Ir noliktavā
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Rullis: 3 000
Si SMD/SMT ThinPAK-5 N-Channel 1 Channel 600 V 16.4 A 199 mOhms - 20 V, 20 V 3.5 V 32 nC - 40 C + 150 C 139 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET CONSUMER
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13 928Ir noliktavā
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Rullis: 2 500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 600 V 6.8 A 1 Ohms - 20 V, 20 V 2.5 V 13 nC - 40 C + 150 C 61 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET N-Ch 550V 9A DPAK-2
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2 236Ir noliktavā
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Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 500 V 9 A 399 mOhms - 30 V, 30 V 3 V 17 nC - 55 C + 150 C 83 W Enhancement CoolMOS Reel, Cut Tape, MouseReel

Infineon Technologies MOSFET N-Ch 500V 13A TO247-3 CoolMOS CP
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172Ir noliktavā
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Si Through Hole TO-247-3 N-Channel 1 Channel 500 V 13 A 220 mOhms - 20 V, 20 V 2.5 V 36 nC - 55 C + 150 C 114 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET N-Ch 650V 16A D2PAK-2 CoolMOS CP
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914Ir noliktavā
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Rullis: 1 000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 600 V 16 A 180 mOhms - 20 V, 20 V 2.5 V 43 nC - 55 C + 150 C 139 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET CONSUMER
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2 588Ir noliktavā
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Min.: 1
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Rullis: 2 500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 600 V 9.9 A 540 mOhms - 20 V, 20 V 2.5 V 20.5 nC - 40 C + 150 C 82 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET N-Ch 800V 1.9A DPAK-2
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8 765Ir noliktavā
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Rullis: 2 500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 800 V 1.9 A 2.8 Ohms - 30 V, 30 V 3 V 12 nC - 55 C + 150 C 42 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET N-Ch 650V 9A ThinPAK-4 CoolMOS CP
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2 106Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 3 000

Si SMD/SMT VSON-4 N-Channel 1 Channel 600 V 27 A 385 mOhms - 20 V, 20 V 3.5 V 17 nC - 40 C + 150 C 83 W Enhancement CoolMOS Reel, Cut Tape
Infineon Technologies MOSFET CONSUMER
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7 847Ir noliktavā
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Si SMD/SMT SOT-223-3 N-Channel 1 Channel 600 V 5 A 3.51 Ohms - 20 V, 20 V 2.5 V 9.4 nC - 40 C + 150 C 5 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET N-Ch 800V 3.9A DPAK-2
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1 780Ir noliktavā
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Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 800 V 3.9 A 1.4 Ohms - 30 V, 30 V 3 V 23 nC - 55 C + 150 C 63 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET N-Ch 650V 21A TO220-3 CoolMOS CP
Datu lapa
585Ir noliktavā
Min.: 1
Vair.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 21 A 150 mOhms - 20 V, 20 V 2.5 V 52 nC - 55 C + 150 C 192 W Enhancement CoolMOS Tube

Infineon Technologies MOSFET N-Ch 600V 39A TO247-3 CoolMOS CP
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271Ir noliktavā
Min.: 1
Vair.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 39 A 68 mOhms - 20 V, 20 V 2.5 V 116 nC - 55 C + 150 C 313 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET CONSUMER
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8 873Ir noliktavā
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Rullis: 2 500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 500 V 18.1 A 280 mOhms - 20 V, 20 V 3 V 32.6 nC - 55 C + 150 C 119 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET N-Ch 600V 10.3A TO220FP-3
Datu lapa
403Ir noliktavā
Min.: 1
Vair.: 1

Si Through Hole TO-220FP-3 N-Channel 1 Channel 600 V 14.7 A 890 mOhms - 20 V, 20 V 3 V 32 nC - 40 C + 150 C 31 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET CONSUMER
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979Ir noliktavā
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Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 7.2 A 2.22 Ohms - 20 V, 20 V 3 V 15.3 nC - 55 C + 150 C 68 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET CONSUMER
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501Ir noliktavā
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Vair.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 15.1 A 940 mOhms - 20 V, 20 V 3 V 39 nC - 55 C + 150 C 31 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET CONSUMER
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648Ir noliktavā
Min.: 1
Vair.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 5.7 A 2.19 Ohms - 20 V, 20 V 3 V 31 nC - 40 C + 150 C 32 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET CONSUMER
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233Ir noliktavā
Min.: 1
Vair.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 16.7 A 250 mOhms - 20 V, 20 V 2.1 V 91 nC - 40 C + 150 C 35 W Enhancement CoolMOS Tube