CoolSiC™ 1200V SiC Trench MOSFETs

Infineon Technologies CoolSiC™ 1200V SiC Trench MOSFETs combine the strong physical characteristics of Silicon Carbide with unique features that increase the device's performance, robustness, and ease of use. The CoolSiC 1200V SiC Trench MOSFETs are built on a state-of-the-art trench semiconductor process optimized to deliver the lowest application losses and the highest reliability in operation. Suitable for high-temperature and harsh environment operations, these devices enable the simplified and cost-effective deployment of the highest system efficiency.

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Infineon Technologies SiC MOSFET CoolSiC 1200 V SiC Trench MOSFET in TO-263-7 package
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SiC MOSFETS SiC Through Hole N-Channel


Infineon Technologies SiC MOSFET CoolSiC 1200 V, 14 mohm SiC Trench MOSFET in TO247-3 package
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