PMDXBx 20V Trench MOSFETs

Nexperia PMDXBx 20V Trench MOSFETs consist of enhancement mode field-effect transistors (FET) in leadless, ultra-small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic packages. The devices employ Trench MOSFET technology, have an exposed drain pad for excellent thermal conduction, provide >1kV HBM ESD protection, and offer 470mΩ drain-source on-state resistance. The PMDXBx MOSFETs are available in dual N- and P-channel versions. The Nexperia PMDXBx 20V Trench MOSFETs are ideal for relay drivers, high-speed line drivers, low-side load switches, and switching circuits.

Rezultāti: 6
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Daudz. RoHS ECAD modelis Tehnoloģija
Montāžas veids
Iepakojums / korpusa
Tranzistora polaritāte
Kanālu skaits
VDS - DS pārtraukuma spriegums
Id - nepārtraukta noplūdes strāva
RDS ieslēgts - noplūdes avota pretestība
VGS - kanāla-avota spriegums
VGS TH - kanāla-avota sliekšņa spriegums
Qg - kanāla lādiņš
Minimālā darba temperatūra
Maksimālā darba temperatūra
Pd - jaudas izkliede
Kanāla režīms
Iepakojums
Nexperia MOSFET PMDXB950UPEL/SOT1216/DFN1010B-
Datu lapa
4 987Ir noliktavā
10 000Pēc pasūtījuma
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Min.: 1
Vair.: 1
Rullis: 5 000

Si SMD/SMT DFN-1010-6 P-Channel 2 Channel 20 V 500 mA 5 Ohms - 8 V, 8 V 950 mV 2.1 nC - 55 C + 150 C 380 mW Enhancement Reel, Cut Tape, MouseReel
Nexperia MOSFET SOT1216 2NCH 30V .59A
Datu lapa
140 000Paredzamais 08.02.2027
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Min.: 1
Vair.: 1
Rullis: 5 000

Si SMD/SMT DFN-1010-6 N-Channel 2 Channel 30 V 590 mA 670 mOhms - 8 V, 8 V 450 mV 1.05 nC - 55 C + 150 C 4.03 W Enhancement Reel, Cut Tape, MouseReel
Nexperia MOSFET PMDXB1200UPE/SOT1216/DFN1010B-
Datu lapa
15 140Paredzamais 08.02.2027
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Vair.: 1
Rullis: 5 000

Si SMD/SMT DFN-1010-6 P-Channel 2 Channel 30 V 410 mA 1.4 Ohms - 8 V, 8 V 950 mV 1.2 nC - 55 C + 150 C 410 mW Enhancement Reel, Cut Tape, MouseReel
Nexperia MOSFET SOT1216 2NCH 20V .6A
Datu lapa
9 200Paredzamais 08.02.2027
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Min.: 1
Vair.: 1
Rullis: 5 000

Si SMD/SMT DFN-1010-6 N-Channel 2 Channel 20 V 600 mA 470 mOhms, 470 mOhms - 8 V, 8 V 450 mV 700 pC - 55 C + 150 C 380 mW Enhancement Reel, Cut Tape, MouseReel
Nexperia MOSFET PMDXB600UNE/SOT1216/DFN1010B-6
Datu lapa
24 993Paredzamais 08.02.2027
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Min.: 1
Vair.: 1
Rullis: 5 000

Si SMD/SMT DFN-1010-6 N-Channel 2 Channel 20 V 600 mA 3 Ohms, 3 Ohms - 8 V, 8 V 450 mV 400 pC - 55 C + 150 C 380 mW Enhancement Reel, Cut Tape, MouseReel
Nexperia MOSFET PMDXB950UPE/SOT1216/DFN1010B-6
Datu lapa
5 000Paredzamais 08.02.2027
MouseReel ir pieejams
Min.: 1
Vair.: 1
Rullis: 5 000

Si SMD/SMT DFN-1010-6 P-Channel 2 Channel 20 V 500 mA 5 Ohms - 8 V, 8 V 450 mV 2.1 nC - 55 C + 150 C 380 mW Enhancement Reel, Cut Tape, MouseReel