High Speed Asynchronous SRAMs

ISSI High-Speed Asynchronous SRAMs are high-speed, static RAMs organized in various access speeds and densities (64KB to 16MB). These High-Speed Asynchronous SRAMs are fabricated using ISSI's high-performance CMOS technology. This highly reliable process, coupled with innovative circuit design techniques, yields high-performance and low-power consumption devices. ISSI High-Speed Asynchronous SRAMs offer features that include high access speed, low active power, and low standby power with a single power supply. These ISSI devices are excellent in many industrial and automotive applications.

Rezultāti: 3
Atlasīt Attēls Detaļas Nr. Raž. Apraksts Datu lapa Pieejamība Cenas noteikšana (EUR) Atlasiet rezultātus tabulā pēc vienības cenas, pamatojoties uz daudzumu. Daudz. RoHS ECAD modelis Atmiņas lielums Piekļuves laiks Barošanas spriegums - maks. Barošanas spriegums - min. Barošanas strāva - maks. Minimālā darba temperatūra Maksimālā darba temperatūra Montāžas veids Iepakojums / korpusa Iepakojums
ISSI SRAM 16Mb, Low Power/Power Saver,Async,1Mb x 16,1.65v-2.2v,48 Ball mBGA (9x11 mm), RoHS Noliktavā neesošas preces izpildes laiks 12 Nedēļas
Min.: 1
Vair.: 1

16 Mbit 35 ns 2.2 V 1.65 V 30 mA - 40 C + 85 C SMD/SMT TFBGA-48 Tray

ISSI SRAM 16Mb, Low Power/Power Saver,Async,1Mb x 16,1.65v-2.2v,48 Pin TSOP I, RoHS Noliktavā neesošas preces izpildes laiks 12 Nedēļas
Min.: 96
Vair.: 96

16 Mbit 35 ns 2.2 V 1.65 V 30 mA - 40 C + 85 C SMD/SMT TSOP-48 Tray
ISSI SRAM 16Mb, Low Power/Power Saver,Async,1Mb x 16,1.65v-2.2v,48 Ball mBGA (9x11 mm), RoHS Noliktavā neesošas preces izpildes laiks 12 Nedēļas
Min.: 2 000
Vair.: 2 000
: 2 000

16 Mbit 35 ns 2.2 V 1.65 V 30 mA - 40 C + 85 C SMD/SMT TFBGA-48 Reel