DMTH4004 N-Channel Enhancement Mode MOSFET

Diodes Incorporated DMTH4004 N-Channel Enhancement Mode MOSFETs are designed to minimize the on-state resistance RDS(ON). These MOSFETs are ideal for high ambient temperature environments and are rated up to 175°C. The N-Channel MOSFETs are 100% UIS (Unclamped Inductive Switching) tested in production which ensures more reliable and robust end application. These MOSFETs offer a 40V drain-to-source voltage and minimizes switching losses. In DMTH4004 series the DMTH4004SCTBQ, DMTH4004SPSQ, and DMTH4004LK3 MOSFETs are designed to meet the strict requirements of automotive applications. All these MOSFETs are PPAP (Production Part Approval Process) capable and are qualified to AEC-Q101 standard. Diodes Incorporated DMTH4004 series MOSFETs are ideal for use in engine management systems, body control electronics, and DC-DC converters.

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Daudz. RoHS ECAD modelis Tehnoloģija
Montāžas veids
Iepakojums / korpusa
Tranzistora polaritāte
Kanālu skaits
VDS - DS pārtraukuma spriegums
Id - nepārtraukta noplūdes strāva
RDS ieslēgts - noplūdes avota pretestība
VGS - kanāla-avota spriegums
VGS TH - kanāla-avota sliekšņa spriegums
Qg - kanāla lādiņš
Minimālā darba temperatūra
Maksimālā darba temperatūra
Pd - jaudas izkliede
Kanāla režīms
Kvalifikācija
Iepakojums
Diodes Incorporated MOSFET 40V N-Ch Enh FET 3mOhm 10Vgs 100A
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2 415Ir noliktavā
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Vair.: 1
Rullis: 2 500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 40 V 100 A 3 mOhms - 20 V, 20 V 1 V 83 nC - 55 C + 175 C 180 W Enhancement Reel, Cut Tape, MouseReel
Diodes Incorporated MOSFET 40V N-Ch Enh FET Low Rdson
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2 363Ir noliktavā
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Vair.: 1
Rullis: 2 500

Si SMD/SMT PowerDI5060-8 N-Channel 1 Channel 40 V 100 A 2.7 mOhms - 20 V, 20 V 4 V 68.6 nC - 55 C + 175 C 167 W Enhancement AEC-Q101 Reel, Cut Tape, MouseReel
Diodes Incorporated MOSFET MOSFET BVDSS: 31V-40V
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2 370Ir noliktavā
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Min.: 1
Vair.: 1
Rullis: 2 500

Si SMD/SMT PowerDI5060-8 N-Channel 1 Channel 40 V 100 A 2.5 mOhms - 20 V, 20 V 1 V 82.2 nC - 55 C + 175 C 138 W Enhancement Reel, Cut Tape, MouseReel
Diodes Incorporated MOSFET 40V 175c N-Ch FET 3mOhm 10Vgs 100A
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548Ir noliktavā
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Min.: 1
Vair.: 1
Rullis: 800

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 40 V 100 A 3 mOhms - 20 V, 20 V 2 V 68.6 nC - 55 C + 175 C 136 W Enhancement Reel, Cut Tape, MouseReel
Diodes Incorporated MOSFET 40V 175c N-Ch FET 3mOhm 10Vgs 100A
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43Ir noliktavā
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Min.: 1
Vair.: 1
Rullis: 800

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 40 V 100 A 2.5 mOhms - 20 V, 20 V 2 V 68.6 nC - 55 C + 175 C 136 W Enhancement AEC-Q101 Reel, Cut Tape, MouseReel
Diodes Incorporated MOSFET MOSFET BVDSS: 31V-40V
Datu lapa
15 000Pieejams rūpnīcas krājums
Plašāka informācija pieejama
Min.: 2 500
Vair.: 2 500
Rullis: 2 500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 40 V 100 A 3 mOhms - 20 V, 20 V 1 V 83 nC - 55 C + 175 C 180 W Enhancement AEC-Q101 Reel
Diodes Incorporated MOSFET 40V 175c N-Ch FET 3mOhm 10Vgs 100A
Datu lapa
10 000Pieejams rūpnīcas krājums
Plašāka informācija pieejama
Min.: 2 500
Vair.: 2 500
Rullis: 2 500

Si SMD/SMT DPAK-3 (TO-252-3) Reel

Diodes Incorporated MOSFET MOSFET BVDSS: 31V-40V PowerDI5060-8 T&R 2.5K
Datu lapa
Noliktavā neesošas preces izpildes laiks 24 Nedēļas
Min.: 2 500
Vair.: 2 500
Rullis: 2 500
Si SMD/SMT PowerDI5060-8 N-Channel 1 Channel 40 V 100 A 2.5 mOhms - 20 V, 20 V 1 V 69.6 nC - 55 C + 175 C 125 W Enhancement AEC-Q101 Reel
Diodes Incorporated MOSFET MOSFET BVDSS: 31V-40V
Datu lapa
Noliktavā neesošas preces izpildes laiks 24 Nedēļas
Min.: 2 500
Vair.: 2 500
Rullis: 2 500

Si SMD/SMT DPAK-3 (TO-252-3) AEC-Q101 Reel