LFPAK4 Automotive N-Channel Power MOSFETs

onsemi LFPAK4 Automotive N-Channel Power MOSFETs are AEC-Q101-qualified, single N-channel MOSFETs with a small 5mm x 6mm footprint, ideal for compact designs. These devices feature a low drain-to-source on-resistance to minimize conduction losses and low gate charge and capacitance to minimize driver losses. These automotive-grade power MOSFETs are Pb-free, RoHS-compliant, and feature a wide -55°C to +175°C operating temperature range.

Rezultāti: 10
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Daudz. RoHS ECAD modelis Tehnoloģija
Montāžas veids
Iepakojums / korpusa
Tranzistora polaritāte
Kanālu skaits
VDS - DS pārtraukuma spriegums
Id - nepārtraukta noplūdes strāva
RDS ieslēgts - noplūdes avota pretestība
VGS - kanāla-avota spriegums
VGS TH - kanāla-avota sliekšņa spriegums
Qg - kanāla lādiņš
Minimālā darba temperatūra
Maksimālā darba temperatūra
Pd - jaudas izkliede
Kanāla režīms
Kvalifikācija
Iepakojums
onsemi MOSFET 40V 0.9Ohm 322A Single N-Channel
Datu lapa
3 000Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 3 000

Si SMD/SMT LFPAK-4 N-Channel 1 Channel 40 V 35 A 12 mOhms - 20 V, 20 V 3.5 V 7.9 nC - 55 C + 175 C 28 W Enhancement AEC-Q101 Reel, Cut Tape
onsemi MOSFET 40V 5.3Ohm 68A Single N-Channel
Datu lapa
2 970Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 3 000
Si SMD/SMT LFPAK-4 N-Channel 1 Channel 40 V 71 A 5.3 mOhms - 20 V, 20 V 3.5 V 16 nC - 55 C + 175 C 50 W Enhancement AEC-Q101 Reel, Cut Tape
onsemi MOSFET 40V 8.0 mOhm 48A Single N-Channel
Datu lapa
11 812Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 3 000

Si SMD/SMT LFPAK-4 N-Channel 1 Channel 40 V 49 A 8.1 mOhms - 20 V, 20 V 3.5 V 10 nC - 55 C + 175 C 38 W Enhancement AEC-Q101 Reel, Cut Tape
onsemi MOSFET 40V 10Ohm 38A Single N-Channel
Datu lapa
1 501Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 3 000

Si SMD/SMT LFPAK-4 N-Channel 1 Channel 40 V 38 A 10.3 mOhms - 20 V, 20 V 2 V 7.3 nC - 55 C + 175 C 28 W Enhancement AEC-Q101 Reel, Cut Tape
onsemi MOSFET 60V 14.5Ohm 42A Single N-Channel
Datu lapa
41Ir noliktavā
3 000Paredzamais 26.06.2026
MouseReel ir pieejams
Min.: 1
Vair.: 1
Rullis: 3 000

Si SMD/SMT LFPAK-4 N-Channel 1 Channel 60 V 36 A 15 mOhms - 20 V, 20 V 2 V 9.7 nC - 55 C + 175 C 37 W Enhancement AEC-Q101 Reel, Cut Tape, MouseReel
onsemi MOSFET 60V 21mOhm 27A Single N-Channel
Datu lapa
2 938Ir noliktavā
3 000Paredzamais 26.05.2026
Min.: 1
Vair.: 1
Rullis: 3 000

Si SMD/SMT LFPAK-4 N-Channel 1 Channel 60 V 27 A 21 mOhms - 20 V, 20 V 2 V 5 nC - 55 C + 175 C 28 W Enhancement AEC-Q101 Reel, Cut Tape
onsemi MOSFET 60V 30Ohm 20A Single N-Channel
Datu lapa
862Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 3 000

Si SMD/SMT LFPAK-4 N-Channel 1 Channel 60 V 21 A 27.5 mOhms - 20 V, 20 V 2 V 5.8 nC - 55 C + 175 C 3.8 W Enhancement AEC-Q101 Reel, Cut Tape
onsemi MOSFET T6 60V LL LFPAK
Datu lapa
8Ir noliktavā
3 000Paredzamais 17.07.2026
Min.: 1
Vair.: 1
Rullis: 3 000

Si SMD/SMT LFPAK-4 N-Channel 1 Channel 60 V 71 A 6.1 mOhms - 20 V, 20 V 2 V 20 nC - 55 C + 175 C 61 W Enhancement Reel, Cut Tape
onsemi MOSFET 60V 3mOhm 133A Single N-Channel
Datu lapa
6 000Paredzamais 17.04.2026
Min.: 1
Vair.: 1
Rullis: 3 000

Si SMD/SMT LFPAK-4 N-Channel 1 Channel 60 V 133 A 3 mOhms - 20 V, 20 V 2 V 40.7 nC - 55 C + 175 C 100 W Enhancement AEC-Q101 Reel, Cut Tape
onsemi MOSFET 40V 7.3mOhm 50A Single N-Channel
Datu lapa
2 645Paredzamais 17.07.2026
Min.: 1
Vair.: 1
Rullis: 3 000

Si SMD/SMT LFPAK-4 N-Channel 1 Channel 40 V 52 A 7.3 mOhms - 20 V, 20 V 2 V 16 nC - 55 C + 175 C 38 W Enhancement AEC-Q101 Reel, Cut Tape