STDRIVEG612 600V Half-Bridge Gate Driver

STMicroelectronics STDRIVEG612 600V High-Speed Half-Bridge Gate Driver is optimized for 5V driving enhanced-mode GaN HEMTs. The high-side driver section is designed to support a voltage rail of up to 600V and can be easily supplied by the integrated bootstrap diode. High-current capability, short propagation delay with excellent delay matching, and integrated LDOs make the STDRIVEG612 optimized for driving high-speed GaN.

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STMicroelectronics Kanālu draiveri High voltage and high-speed half-bridge gate driver for GaN power switches
1 000Paredzamais 27.02.2026
Min.: 1
Vair.: 1
Rullis: 3 000
STMicroelectronics STDRIVEG612Q
STMicroelectronics STMicroelectronics High voltage and high-speed half-bridge gate driver for GaN power switches Nav noliktavā
Min.: 4 900
Vair.: 4 900