DXTN/P 78Q & 80Q Bipolar Transistors

Diodes Incorporated DXTN/P 78Q and 80Q Bipolar Transistors offer 30V, 60V, and 100V ratings, deliver exceptional conduction efficiency and thermal performance for demanding automotive power switching and control. The ultra-low VCE(SAT) NPN and PNP bipolar transistors are ideal for 12V, 24V, and 48V systems, supporting applications such as MOSFET and IGBT gate driving, load switching, LDO regulation, DC-DC conversion, and motor/actuator control.

Rezultāti: 12
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Apraksts Datu lapa Pieejamība Cenas noteikšana (EUR) Atlasiet rezultātus tabulā pēc vienības cenas, pamatojoties uz daudzumu.
Daudz. RoHS ECAD modelis Tehnoloģija
Montāžas veids
Iepakojums / korpusa
Tranzistora polaritāte
Konfigurācija
Kolektors - starotāja spriegums, VCEO maks.
Kolektors - pamatspriegums VCBO
Starotājs - pamata spriegums VEBO
Kolektora-starotāja piesātinājuma spriegums
Pd - jaudas izkliede
Pieauguma joslas platuma produkts fT
Minimālā darba temperatūra
Maksimālā darba temperatūra
Kvalifikācija
Sērija
Iepakojums
Diodes Incorporated Bipolārais transistors (BJT) Pwr Low Sat Transistor PowerDI3333-8/SWP T&R 2K
Datu lapa
1 393Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 2 000

Si SMD/SMT PowerVDFN-8 NPN Single 30 V 80 V 8 V 140 mV 2.4 W 260 MHz - 55 C + 175 C AEC-Q101 DXTN Reel, Cut Tape
Diodes Incorporated Bipolārais transistors (BJT) Pwr Low Sat Transistor PowerDI3333-8/SWP T&R 2K
Datu lapa
1 393Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 2 000

Si SMD/SMT PowerVDFN-8 NPN Single 60 V 100 V 8 V 135 mV 2.4 W 250 MHz - 55 C + 175 C AEC-Q101 DXTN Reel, Cut Tape
Diodes Incorporated Bipolārais transistors (BJT) Pwr Low Sat Transistor PowerDI3333-8/SWP T&R 2K
Datu lapa
1 393Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 2 000

Si SMD/SMT PowerVDFN-8 NPN Single 100 V 150 V 8 V 130 mV 2.4 W 210 MHz - 55 C + 175 C AEC-Q101 DXTN Reel, Cut Tape
Diodes Incorporated Bipolārais transistors (BJT) Pwr Low Sat Transistor PowerDI3333-8/SWP T&R 2K
Datu lapa
1 592Ir noliktavā
2 000Paredzamais 08.04.2026
Min.: 1
Vair.: 1
Rullis: 2 000

Si SMD/SMT PowerVDFN-8 NPN Single 30 V 80 V 8 V 120 mV 2.4 W 130 MHz - 55 C + 175 C AEC-Q101 DXTN Reel, Cut Tape
Diodes Incorporated Bipolārais transistors (BJT) Pwr Low Sat Transistor PowerDI3333-8/SWP T&R 2K
Datu lapa
3 880Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 2 000

Si SMD/SMT PowerVDFN-8 NPN Single 60 V 100 V 8 V 100 mV 2.4 W 140 MHz - 55 C + 175 C AEC-Q101 DXTN Reel, Cut Tape
Diodes Incorporated Bipolārais transistors (BJT) Pwr Low Sat Transistor PowerDI3333-8/SWP T&R 2K
Datu lapa
1 592Ir noliktavā
2 000Paredzamais 20.04.2026
Min.: 1
Vair.: 1
Rullis: 2 000

Si SMD/SMT PowerVDFN-8 NPN Single 100 V 150 V 8 V 130 mV 2.4 W 125 MHz - 55 C + 175 C AEC-Q101 DXTN Reel, Cut Tape
Diodes Incorporated Bipolārais transistors (BJT) Pwr Low Sat Transistor PowerDI3333-8/SWP T&R 2K
Datu lapa
1 393Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 2 000

Si SMD/SMT PowerVDFN-8 PNP Single 30 V 40 V 8 V 170 mV 2.4 W 315 MHz - 55 C + 175 C AEC-Q101 DXTP Reel, Cut Tape
Diodes Incorporated Bipolārais transistors (BJT) Pwr Low Sat Transistor PowerDI3333-8/SWP T&R 2K
Datu lapa
1 393Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 2 000

Si SMD/SMT PowerVDFN-8 PNP Single 60 V 70 V 8 V 220 mV 2.4 W 320 MHz - 55 C + 175 C AEC-Q101 DXTP Reel, Cut Tape
Diodes Incorporated Bipolārais transistors (BJT) Pwr Low Sat Transistor PowerDI3333-8/SWP T&R 2K
Datu lapa
1 393Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 2 000

Si SMD/SMT PowerVDFN-8 PNP Single 100 V 110 V 8 V 165 mV 2.4 W 290 MHz - 55 C + 175 C AEC-Q101 DXTP Reel, Cut Tape
Diodes Incorporated Bipolārais transistors (BJT) Pwr Low Sat Transistor PowerDI3333-8/SWP T&R 2K
Datu lapa
3 785Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 2 000

Si SMD/SMT PowerVDFN-8 PNP Single 30 V 40 V 8 V 130 mV 2.4 W 190 MHz - 55 C + 175 C AEC-Q101 DXTP Reel, Cut Tape
Diodes Incorporated Bipolārais transistors (BJT) Pwr Low Sat Transistor PowerDI3333-8/SWP T&R 2K
Datu lapa
1 588Ir noliktavā
2 000Paredzamais 29.04.2026
Min.: 1
Vair.: 1
Rullis: 2 000

Si SMD/SMT PowerVDFN-8 PNP Single 60 V 70 V 8 V 290 mV 2.4 W 180 MHz - 55 C + 175 C AEC-Q101 DXTP Reel, Cut Tape
Diodes Incorporated Bipolārais transistors (BJT) Pwr Low Sat Transistor PowerDI3333-8/SWP T&R 2K
Datu lapa
1 592Ir noliktavā
2 000Paredzamais 08.05.2026
Min.: 1
Vair.: 1
Rullis: 2 000

Si SMD/SMT PowerVDFN-8 PNP Single 100 V 110 V 8 V 180 mV 2.4 W 160 MHz - 55 C + 175 C AEC-Q101 DXTP Reel, Cut Tape