PXNx N-Channel Logic Level Trench MOSFETs

Nexperia PXNx N-Channel Logic Level Trench MOSFETs are designed for high-efficiency power management in various applications. These Nexperia MOSFETs feature low on-state resistance [RDS(on)], ranging from 2.8mΩ to 14mΩ, and support 60V and 100V drain-source voltages (VDS). These MOSFETs are optimized for logic level compatibility and are suitable for secondary side synchronous rectification, DC-to-DC converters, motor drives, load switching, and LED lighting. These MOSFETs are housed in thermally efficient MLPAK33 and MLPAK56 packages, which offer a compact footprint and enhanced thermal performance. With features like low gate charge (Qg) and high avalanche ruggedness, the PXNx series ensures reliable operation in demanding environments.

Rezultāti: 9
Atlasīt Attēls Detaļas Nr. Raž. Apraksts Datu lapa Pieejamība Cenas noteikšana (EUR) Atlasiet rezultātus tabulā pēc vienības cenas, pamatojoties uz daudzumu. Daudz. RoHS ECAD modelis Tehnoloģija Montāžas veids Iepakojums / korpusa Tranzistora polaritāte Kanālu skaits VDS - DS pārtraukuma spriegums Id - nepārtraukta noplūdes strāva RDS ieslēgts - noplūdes avota pretestība VGS - kanāla-avota spriegums VGS TH - kanāla-avota sliekšņa spriegums Qg - kanāla lādiņš Minimālā darba temperatūra Maksimālā darba temperatūra Pd - jaudas izkliede Kanāla režīms Iepakojums
Nexperia MOSFET N-channel 60 V, 14 mOhm, logic level Trench MOSFET in MLPAK33 1 489Ir noliktavā
Min.: 1
Vair.: 1
Maks.: 1 489
Rullis: 3 000

Si SMD/SMT MLPAK33-8 N-Channel 1 Channel 60 V 39 A 14 mOhms - 20 V, 20 V 2.2 V 5.9 nC - 55 C + 150 C 43 W Enhancement Reel, Cut Tape, MouseReel
Nexperia MOSFET N-channel 60 V, 11 mOhm, logic level Trench MOSFET in MLPAK33 15Ir noliktavā
Min.: 1
Vair.: 1
Maks.: 15
Rullis: 3 000

Si SMD/SMT MLPAK33-8 N-Channel 1 Channel 60 V 46 A 11 mOhms - 20 V, 20 V 2.2 V 7.8 nC - 55 C + 150 C 47 W Enhancement Reel, Cut Tape, MouseReel
Nexperia MOSFET N-channel 100 V, 2.8 mOhm, logic level Trench MOSFET in MLPAK56 28Ir noliktavā
Min.: 1
Vair.: 1
Maks.: 28
Rullis: 3 000

Si SMD/SMT MLPAK56-8 N-Channel 1 Channel 100 V 184 A 2.8 mOhms - 20 V, 20 V 2.2 V 51 nC - 55 C + 150 C 181 W Enhancement Reel, Cut Tape, MouseReel
Nexperia MOSFET N-channel 100 V, 2.9 mOhm, standard level Trench MOSFET in MLPAK56 8Ir noliktavā
Min.: 1
Vair.: 1
Maks.: 8
Rullis: 3 000

Si SMD/SMT MLPAK56-8 N-Channel 1 Channel 100 V 180 A 2.9 mOhms - 20 V, 20 V 4 V 74 nC - 55 C + 150 C 181 W Enhancement Reel, Cut Tape, MouseReel
Nexperia MOSFET N-channel 60 V, 5.7 mOhm, logic level Trench MOSFET in MLPAK33 113Ir noliktavā
Min.: 1
Vair.: 1
Maks.: 113
Rullis: 3 000

Si SMD/SMT MLPAK33-8 N-Channel 1 Channel 60 V 83 A 5.7 mOhms - 20 V, 20 V 2.2 V 16.5 nC - 55 C + 150 C 79 W Enhancement Reel, Cut Tape, MouseReel
Nexperia MOSFET N-channel 60 V, 6.2 mOhm, logic level Trench MOSFET in MLPAK33 250Ir noliktavā
Min.: 1
Vair.: 1
Maks.: 250
Rullis: 3 000

Si SMD/SMT MLPAK33-8 N-Channel 1 Channel 60 V 77 A 6.2 mOhms - 20 V, 20 V 2.2 V 14.1 nC - 55 C + 150 C 74 W Enhancement Reel, Cut Tape, MouseReel
Nexperia MOSFET N-channel 60 V, 6.8 mOhm, logic level Trench MOSFET in MLPAK33 216Ir noliktavā
Min.: 1
Vair.: 1
Maks.: 216
Rullis: 3 000

Si SMD/SMT MLPAK33-8 N-Channel 1 Channel 60 V 70 A 6.8 mOhms - 20 V, 20 V 2.2 V 12.3 nC - 55 C + 150 C 66 W Enhancement Reel, Cut Tape, MouseReel
Nexperia MOSFET N-channel 60 V, 7.7 mOhm, logic level Trench MOSFET in MLPAK33 250Ir noliktavā
Min.: 1
Vair.: 1
Maks.: 250
Rullis: 3 000

Si SMD/SMT MLPAK33-8 N-Channel 1 Channel 60 V 62 A 7.7 mOhms - 20 V, 20 V 2.2 V 11 nC - 55 C + 150 C 59 W Enhancement Reel, Cut Tape, MouseReel
Nexperia MOSFET N-channel 60 V, 9.1 mOhm, logic level Trench MOSFET in MLPAK33 250Ir noliktavā
Min.: 1
Vair.: 1
Maks.: 250
Rullis: 3 000

Si SMD/SMT MLPAK33-8 N-Channel 1 Channel 60 V 56 A 9.1 mOhms - 20 V, 20 V 2.2 V 9.3 nC - 55 C + 150 C 56 W Enhancement Reel, Cut Tape, MouseReel