SiC MOSFETs

GeneSiC Semiconductor’s G3R™ Silicon Carbide (SiC) MOSFETs offer RDS(ON) levels from 12mΩ to 1000mΩ and robustness for efficiency and system reliability in automotive and industrial applications. These MOSFETs deliver a fast switching frequency, increased power density, reduced ringing (EMI), and a compact size. The G3R SiC MOSFETs are offered in optimized low-inductance discrete packages (SMD and through-hole). The modules are highly optimized for power system designs that require elevated efficiency levels at all operating temperatures and ultra-fast switching speeds with ultra-low losses. GeneSiC SiC MOSFETs provide faster switching and lower ON resistance than silicon-based products. Additional features include superior electric characteristics at high temperatures and significantly lower switching loss, allowing smaller peripheral components to be used.

Rezultāti: 8
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Daudz. RoHS ECAD modelis Montāžas veids
Iepakojums / korpusa
Tranzistora polaritāte
Kanālu skaits
VDS - DS pārtraukuma spriegums
Id - nepārtraukta noplūdes strāva
RDS ieslēgts - noplūdes avota pretestība
VGS - kanāla-avota spriegums
VGS TH - kanāla-avota sliekšņa spriegums
Qg - kanāla lādiņš
Minimālā darba temperatūra
Maksimālā darba temperatūra
Pd - jaudas izkliede
Kanāla režīms
GeneSiC Semiconductor SiC MOSFET 1200V 12mohm TO-247-4 G3R SiC MOSFET
Datu lapa
1 766Ir noliktavā
Min.: 1
Vair.: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 111 A 12 mOhms - 10 V, + 22 V 2.7 V 288 nC - 55 C + 175 C 567 W Enhancement
GeneSiC Semiconductor SiC MOSFET 1700V 160mohm TO-247-3 G3R SiC MOSFET
Datu lapa
603Ir noliktavā
Min.: 1
Vair.: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.7 kV 17 A 160 mOhms - 5 V, + 15 V 2.7 V 29 nC - 55 C + 175 C 138 W Enhancement
GeneSiC Semiconductor SiC MOSFET 1700V 20mohm TO-247-4 G3R SiC MOSFET
Datu lapa
29Ir noliktavā
150Paredzamais 21.07.2026
Min.: 1
Vair.: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.7 kV 101 A 20 mOhms - 5 V, + 15 V 2.7 V 256 nC - 55 C + 175 C 569 W Enhancement
GeneSiC Semiconductor SiC MOSFET 1200V 30mohm TO-247-4 G3R SiC MOSFET
Datu lapa
588Ir noliktavā
Min.: 1
Vair.: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 70 A 30 mOhms - 5 V, + 15 V 2.7 V 118 nC - 55 C + 175 C 281 W Enhancement
GeneSiC Semiconductor SiC MOSFET 1200V 40mohm TO-247-4 G3R SiC MOSFET
Datu lapa
506Ir noliktavā
Min.: 1
Vair.: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 55 A 40 mOhms - 5 V, + 15 V 2.7 V 88 nC - 55 C + 175 C 228 W Enhancement
GeneSiC Semiconductor SiC MOSFET 1700V 45mohm TO-247-4 G3R SiC MOSFET
Datu lapa
288Ir noliktavā
Min.: 1
Vair.: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.7 kV 48 A 45 mOhms - 5 V, + 15 V 2.7 V 106 nC - 55 C + 175 C 284 W Enhancement
GeneSiC Semiconductor SiC MOSFET 1700V 450mohm TO-247-3 G3R SiC MOSFET
Datu lapa
32Ir noliktavā
1 200Paredzamais 19.06.2026
Min.: 1
Vair.: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.7 kV 7 A 450 mOhms - 5 V, + 15 V 2.7 V 13 nC - 55 C + 175 C 70 W Enhancement
GeneSiC Semiconductor SiC MOSFET 1700V 450mohm TO-263-7 G3R SiC MOSFET
Datu lapa
800Paredzamais 19.06.2026
Min.: 1
Vair.: 1
Rullis: 800

SMD/SMT TO-263-7 N-Channel 1 Channel 1.7 kV 8 A 630 mOhms - 5 V, + 15 V 2.7 V 13 nC - 55 C + 175 C 71 W Enhancement