GaAs FET & pHEMT Devices

MicroWave Technology GaAs FET and pHEMT Devices are ultra-linear, high-dynamic range, and low-phase noise devices that include commercial, industrial, military, and space-grade variants. The GaAs process employed by MicroWave Technology is approved for space applications with proven reliability. These devices come with standard and custom device specifications with high-rel and space-rel screening options availability. The GaAs FET and pHEMT devices are RoHS (lead-free) compliant and offer 100% wafer bond pull, die shear, wafer DC burn-in, and bake tests in evaluation per MIL-PRF-38534. These devices are typically suitable for oscillators, narrow-band, wideband applications, space, and military applications.

Rezultāti: 10
Atlasīt Attēls Detaļas Nr.
 Raž.
Apraksts Datu lapa Pieejamība Cenas noteikšana (EUR) Atlasiet rezultātus tabulā pēc vienības cenas, pamatojoties uz daudzumu.
Daudz. RoHS ECAD modelis Tehnoloģija
Id - nepārtraukta noplūdes strāva
VDS - DS pārtraukuma spriegums
RDS ieslēgts - noplūdes avota pretestība
Darbības frekvence
Pieaugums
Izejas jauda
Maksimālā darba temperatūra
Iepakojums / korpusa
Iepakojums
CML Micro RF MOSFET tranzistori Narrow and Broad Band High Efficiency Amplifier, High Power Amplifier, and Oscillator Applications
Datu lapa
90Ir noliktavā
Min.: 10
Vair.: 10

GaAs 440 mA to 800 mA 8 V 12 GHz 9 dB 32 dBm + 150 C Die Bulk
CML Micro RF MOSFET tranzistori Narrow and Broad Band Linear Amplifier and Oscillator Applications
Datu lapa
60Ir noliktavā
Min.: 10
Vair.: 10

GaAs 220 mA 12 GHz 10 dB 26 dBm + 150 C Die Bulk

CML Micro RF MOSFET tranzistori 26 GHz Medium Power Packaged GaAs FET
Datu lapa
6Ir noliktavā
100Paredzamais 17.03.2026
MouseReel ir pieejams
Min.: 1
Vair.: 1
Rullis: 100

GaAs 26 mA 173 Ohms 26 GHz 11 dB 20 dBm + 150 C Reel, Cut Tape, MouseReel
CML Micro RF MOSFET tranzistori Narrow and Broad Band High Efficiency Amplifier, High Power Amplifier, and Oscillator Applications
Datu lapa
100Ir noliktavā
Min.: 10
Vair.: 10

GaAs 250 mA to 300 mA 8 V 18 GHz 11 dB 30 dBm + 150 C Die Bulk
CML Micro RF MOSFET tranzistori Narrow and Broad Band High Efficiency Amplifier and Oscillator Applications
Datu lapa
100Ir noliktavā
Min.: 10
Vair.: 10

GaAs 180 mA to 220 mA 7.5 V 26 GHz 13 dB 28 dBm + 150 C Die Bulk
CML Micro RF MOSFET tranzistori Narrow and Broad Band High Efficiency Amplifier and Oscillator Applications
Datu lapa
100Ir noliktavā
Min.: 10
Vair.: 10

GaAs 150 mA to 190 mA 7.5 V 28 GHz 12 dB 28 dBm + 150 C Die Bulk
CML Micro RF MOSFET tranzistori Low Noise pHEMT Devices
Datu lapa
50Ir noliktavā
Min.: 10
Vair.: 10
Rullis: 10
GaAs 120 mA 4 V 26 GHz 10 dB, 13 dB 16 dBm + 150 C Die Reel
CML Micro RF MOSFET tranzistori Low Noise pHEMT Devices
Datu lapa
100Ir noliktavā
Min.: 10
Vair.: 10

GaAs 175 mA 4.5 V 26 GHz 8 dB, 11 dB 20 dBm + 150 C Die Bulk
CML Micro RF MOSFET tranzistori Narrow and Broad Band High Efficiency Amplifier and Oscillator Applications
Datu lapa
10Ir noliktavā
Min.: 10
Vair.: 10

GaAs 60 mA to 80 mA 6.5 V 28 GHz 15 dB 23 dBm + 150 C Die Bulk
CML Micro RF MOSFET tranzistori Narrow and Broad Band Linear Amplifier and Oscillator Applications
Datu lapa
Noliktavā neesošas preces izpildes laiks 9 Nedēļas
Min.: 10
Vair.: 10

GaAs 85 mA 26 GHz 15 dB 21 dBm + 150 C Die Bulk