Piemērotie filtri:
onsemi NxT2023N065M3S EliteSiC MOSFETs
12.04.2025
12.04.2025
Feature low effective output capacitance and ultra-low gate charge.
onsemi NXVF6532M3TG01 650V EliteSiC H-Bridge Power MOSFET
08.08.2025
08.08.2025
Delivers superior efficiency, fast switching, and robust thermal performance.
onsemi NVBG050N170M1 Silicon Carbide (SiC) MOSFET
05.22.2025
05.22.2025
Features a maximum 76mΩ @ 20V maximum RDS(ON), and 1700V drain-to-source voltage.
onsemi NTBL032N065M3S Silicon Carbide (SiC) MOSFETs
02.20.2025
02.20.2025
Designed for fast switching applications, offering reliable performance.
onsemi NVH4L050N170M1 Silicon Carbide (SiC) MOSFETs
02.20.2025
02.20.2025
Deliver exceptional performance with a typical RDS(on) of 53mΩ at VGS = 20V.
onsemi NTH4L018N075SC1 N-Channel SiC MOSFET
08.14.2024
08.14.2024
Low ON resistance, 750V M2 EliteSiC MOSFET available in a compact TO247-4L package.
onsemi NTBG023N065M3S 23mΩ EliteSiC MOSFET
08.14.2024
08.14.2024
Offers an M3S planar technology for fast-switching applications in a D2PAK-7L package.
onsemi NTH4L023N065M3S SiC MOSFET
08.06.2024
08.06.2024
Offers a 650V blocking voltage rating, 153pF output capacitance, and a TO-247-4L package.
onsemi 650V EliteSiC (Silicon Carbide) MOSFETs
05.29.2024
05.29.2024
Technology that provides superior switching performance and higher reliability compared to Silicon.
onsemi Heat Pumps
03.01.2024
03.01.2024
The heat pump stands as a cornerstone of the global shift towards secure and sustainable heating.
onsemi NVHL060N065SC1 EliteSiC MOSFET
02.28.2024
02.28.2024
650V, 60mΩ (typ), and 47A single N-channel MOSFET built with a compact and efficient design.
onsemi NVHL015N065SC1 Silicon Carbide (SiC) MOSFET
02.28.2024
02.28.2024
Features high efficiency, faster operation frequency, and increased power density.
onsemi NVHL025N065SC1 silīcija karbīda (SIC) MOSFET
02.23.2024
02.23.2024
EliteSiC 25 mΩ, 650 V MOSFET, kas nodrošina izcilu komutācijas veiktspēju.
onsemi NVHL045N065SC1 Silicon Carbide (SiC) MOSFETs
02.21.2024
02.21.2024
Features EliteSiC technology and delivers superior switching performance.
onsemi NVHL070N120M3S EliteSiC Automotive SiC MOSFET
01.30.2024
01.30.2024
1200V M3S planar SiC MOSFET optimized for fast switching applications.
onsemi UF4SC120023B7S G4 Silicone Carbide (SiC) FETs
01.09.2024
01.09.2024
1200V, 23mΩ G4 SiC FETs that are based on a unique ‘cascode’ circuit configuration.
onsemi NVHL075N065SC1 Silicon Carbide (SiC) MOSFETs
11.13.2023
11.13.2023
High-performance devices with exceptional characteristics.
onsemi NVH4L095N065SC1 Silicon Carbide (SiC) MOSFETs
11.13.2023
11.13.2023
Feature advanced technology for better switching performance and reliability.
onsemi NVBG070N120M3S Silicon Carbide (SiC) MOSFET
09.19.2023
09.19.2023
1200V M3S planar EliteSiC MOSFET designed for fast switching applications.
onsemi Pairing Gate Drivers with EliteSiC MOSFETs
05.09.2023
05.09.2023
Full portfolio of Gate Drivers and EliteSiC Mosfets that, when paired, improve thermal performance.
onsemi EliteSiC
03.15.2023
03.15.2023
Addresses the needs of demanding applications like solar inverters, and electric vehicle chargers.
onsemi NVBG025N065SC1 Silicon Carbide (SiC) MOSFETs
03.10.2023
03.10.2023
Provide superior switching performance and higher reliability than Silicon.
onsemi NTHL075N065SC1 Silicon Carbide (SiC) MOSFETs
03.10.2023
03.10.2023
Offer superior switching performance and higher reliability than Silicon.
onsemi NTH4L028N170M1 1700 V EliteSiC MOSFET
02.06.2023
02.06.2023
Nodrošina uzticamu, augstas efektivitātes veiktspēju enerģētikas un rūpnieciskās piedziņas lietojumiem.
onsemi NVH4L015N065SC1 Silicon Carbide (SiC) MOSFETs
01.11.2023
01.11.2023
Provide superior switching performance and higher reliability than Silicon.
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Infineon Technologies CoolSiC™ Automotive 750V G2 MOSFETs
12.19.2025
12.19.2025
Engineered to meet the stringent demands of electric vehicle (EV) applications.
onsemi NxT2023N065M3S EliteSiC MOSFETs
12.04.2025
12.04.2025
Feature low effective output capacitance and ultra-low gate charge.
Central Semiconductor 1700 V N kanāla silīcija karbīda (SiC) MOSFET tranzistori
11.20.2025
11.20.2025
These MOSFETS are designed for high-speed switching and fast reverse recovery applications.
ROHM Semiconductor 750V N-Channel SiC MOSFETs
10.17.2025
10.17.2025
Devices boost switching frequency, decreasing the capacitors, reactors & other components required.
Infineon Technologies CoolSiC™ 1400V SiC G2 MOSFETs
10.09.2025
10.09.2025
Offers improved thermal performance, increased power density, and enhanced reliability.
Microchip Technology 1200V SIC MOSFETs
09.25.2025
09.25.2025
MOSFETs offer high efficiency in a lighter, more compact solution with fast switching speeds.
IXYS IXSxNxL2Kx Silicon Carbide (SiC) MOSFETs
09.19.2025
09.19.2025
These devices have a high blocking voltage with low on-state resistance [RDS(ON)].
IXYS IXSJxN120R1K 1200V SiC Power MOSFETs
08.27.2025
08.27.2025
Up to 1200V blocking voltage with 18mΩ or 36mΩ low RDS(on).
ROHM Semiconductor SCT2H12NWB 1700V N-Channel SiC Power MOSFET
08.21.2025
08.21.2025
A 1700V drain-source voltage (VDSS) and 3.9A continuous drain current (ID) rated SiC MOSFET.
onsemi NXVF6532M3TG01 650V EliteSiC H-Bridge Power MOSFET
08.08.2025
08.08.2025
Delivers superior efficiency, fast switching, and robust thermal performance.
ROHM Semiconductor SCT40xKWA N-channel SiC power MOSFETs
07.14.2025
07.14.2025
Feature 1200V VDS, low on-resistance, fast switching speed, and fast recovery time.
Littelfuse IXSJxN120R1 1200 V SiC jaudas MOSFET
06.23.2025
06.23.2025
High-performance devices designed for demanding power conversion applications.
Infineon Technologies CoolSiC™ 750V G2 Silicon Carbide MOSFETs
06.03.2025
06.03.2025
Automotive and industrial qualified MOSFETs with an up to 78mΩ maximum drain-source on-resistance.
onsemi NVBG050N170M1 Silicon Carbide (SiC) MOSFET
05.22.2025
05.22.2025
Features a maximum 76mΩ @ 20V maximum RDS(ON), and 1700V drain-to-source voltage.
APC-E Silicon Carbide (SiC) MOSFETs
05.06.2025
05.06.2025
Delivers high power, high frequency, and unmatched performance for demanding applications.
Wolfspeed 1700V Silicon Carbide MOSFETs
04.17.2025
04.17.2025
Offers higher switching, system efficiency, and power density for next-generation power conversion.
IXYS IXSA80N120L2-7 SiC MOSFET
03.06.2025
03.06.2025
Single-switch MOSFET that features 1200V, 30mΩ, 79A industrial-grade device in a TO263-7L package.
IXYS IXSA40N120L2-7 SiC MOSFET
03.06.2025
03.06.2025
Single-switch MOSFET that features 1200V, 80mΩ, 41A industrial-grade device in a TO263-7L package.
onsemi NTBL032N065M3S Silicon Carbide (SiC) MOSFETs
02.20.2025
02.20.2025
Designed for fast switching applications, offering reliable performance.
onsemi NVH4L050N170M1 Silicon Carbide (SiC) MOSFETs
02.20.2025
02.20.2025
Deliver exceptional performance with a typical RDS(on) of 53mΩ at VGS = 20V.
IXYS IXSH40N120L2KHV SiC MOSFET
02.18.2025
02.18.2025
1200V, 80mΩ, and 41A MOSFET, recommended for use in industrial switch mode power supplies.
IXYS IXSH80N120L2KHV SiC MOSFET
02.18.2025
02.18.2025
1200V, 30mΩ, and 79A MOSFET, recommended for use in industrial switch mode power supplies.
Central Semiconductor CDMS24783-120 N-Channel SiC MOSFET
02.18.2025
02.18.2025
Offers a 1200V drain-source voltage for high-speed switching and fast reverse recovery applications
SemiQ GEN3 1200 V SiC MOSFET diskrētās ierīces
01.02.2025
01.02.2025
Developed to increase performance and cut switching losses in high-voltage applications.
Navitas Semiconductor 650V Gen-3 Fast (G3F) SiC MOSFETs
09.06.2024
09.06.2024
Ideal for AI data center power supplies, EV charging, energy storage systems, and solar solutions.
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