onsemi e2PowerEdge Low VCE(sat) Transistors

onsemi e2PowerEdge Low VCE(sat) Transistors are miniature surface mount devices featuring ultra-low saturation voltage (VCE(sat)) and high current gain capability. These are designed for low-voltage, high-speed switching applications where affordable, efficient energy control is essential. Typical applications are DC−DC converters and power management in portable and battery-powered products such as cellular and cordless phones, PDAs, computers, printers, digital cameras, and MP3 players. Other applications are low-voltage motor controls in mass storage products such as disc and tape drives. These can be used for airbag deployment and instrument clusters in the automotive industry. The high current gain allows onsemi e2PowerEdge devices to be driven directly from PMU’s control outputs, and the linear gain (Beta) makes them ideal components in analog amplifiers.

Features

  • High current
  • Low VCEsat
  • ESD robust
  • High current gain
  • High cut-off frequency
  • Low profile package
  • Linear gain (Beta)

Applications

  • Load switching
  • Battery charging
  • External pass transistor
  • DC-DC converter
  • Complimentary driver
  • Current extension and low drop-out regulation
  • Cathode florescent lamp drive
  • Peripheral driver - LEDs, motors, and relays
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Detaļas numurs Datu lapa Iepakojums / korpusa Tranzistora polaritāte Kolektors - starotāja spriegums, VCEO maks. Kolektora-starotāja piesātinājuma spriegums Maksimālā kolektora līdzstrāva Pd - jaudas izkliede Pieauguma joslas platuma produkts fT
NSS40301MDR2G NSS40301MDR2G Datu lapa SOIC-8 NPN 40 V 82 mV 3 A 783 mW 100 MHz
NSV1C301CTWG NSV1C301CTWG Datu lapa LFPAK-4
NSS40300MDR2G NSS40300MDR2G Datu lapa SOIC-8 PNP 40 V 135 mV 3 A 783 mW 100 MHz
NSS40301CTWG NSS40301CTWG Datu lapa LFPAK-4
NSS40302PDR2G NSS40302PDR2G Datu lapa SOIC-8 NPN, PNP 40 V 82 mV, 135 mV 3 A 783 mW 100 MHz
NSS12100UW3TCG NSS12100UW3TCG Datu lapa WDFN3 PNP 12 V 400 mV 1 A 1.1 W 200 MHz
NSS1C301CTWG NSS1C301CTWG Datu lapa LFPAK-4
NSS20200DMTTBG NSS20200DMTTBG Datu lapa WDFN6 20 V 250 mV
NSS40300DDR2G NSS40300DDR2G Datu lapa SOIC-8 PNP 40 V 135 mV 3 A 783 mW 100 MHz
NSS60101DMTTBG NSS60101DMTTBG Datu lapa NPN 60 V 130 mV 1 A 2.27 W 180 MHz
Publicēts: 2024-05-14 | Atjaunināts: 2025-10-27