STMicroelectronics MDMesh™ N-Channel Power MOSFETs

STMicroelectronics' MDMesh™ N-Channel Power MOSFETs are developed using STMicroelectronics' revolutionary MDmesh™ technology, which associates the multiple drain process with the company's PowerMESH™ horizontal layout. These devices offer extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Utilizing ST's proprietary strip technique, these Power MOSFETs boast an overall dynamic performance which is superior to similar products on the market. Key features include low input capacitance and gate charge, low gate input resistance, and best RDS(on)*Qg in the industry.

Features

  • Low input capacitance and gate charge
  • Low gate input resistance
  • Best RDS(on)*Qg in the industry

Applications

  • Switching applications
  • LC converters
  • Resonant converters
View Results ( 20 ) Page
Detaļas numurs Datu lapa Id - nepārtraukta noplūdes strāva VGS - kanāla-avota spriegums Qg - kanāla lādiņš Pd - jaudas izkliede
STD5N60M2 STD5N60M2 Datu lapa 3.5 A - 25 V, 25 V 8.5 nC 45 W
STI28N60M2 STI28N60M2 Datu lapa 22 A - 25 V, 25 V 36 nC 170 W
STP18NM80 STP18NM80 Datu lapa 17 A - 30 V, 30 V 70 nC 190 W
STB28N60M2 STB28N60M2 Datu lapa 22 A - 25 V, 25 V 36 nC 170 W
STF18NM80 STF18NM80 Datu lapa 17 A - 30 V, 30 V 70 nC 40 W
STL10N60M6 STL10N60M6 Datu lapa 5.5 A - 25 V, 25 V 8.8 nC 48 W
STL33N60M2 STL33N60M2 Datu lapa 21.5 A - 25 V, 25 V 47 nC 150 W
STL13N60M6 STL13N60M6 Datu lapa 7 A - 25 V, 25 V 13 nC 52 W
STB33N60M2 STB33N60M2 Datu lapa 26 A - 25 V, 25 V 45.5 nC 190 W
STW18NM80 STW18NM80 Datu lapa 17 A - 30 V, 30 V 70 nC 190 W
Publicēts: 2012-07-24 | Atjaunināts: 2023-12-14