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Daudz. RoHS ECAD modelis Tehnoloģija
Montāžas veids
Iepakojums / korpusa
Tranzistora polaritāte
Kanālu skaits
VDS - DS pārtraukuma spriegums
Id - nepārtraukta noplūdes strāva
RDS ieslēgts - noplūdes avota pretestība
VGS - kanāla-avota spriegums
VGS TH - kanāla-avota sliekšņa spriegums
Qg - kanāla lādiņš
Minimālā darba temperatūra
Maksimālā darba temperatūra
Pd - jaudas izkliede
Kanāla režīms
Kvalifikācija
Tirdzniecības nosaukums
Iepakojums
Vishay / Siliconix MOSFET N-Channel 40V AEC-Q101 Qualified
Datu lapa
38 010Ir noliktavā
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Si SMD/SMT PowerPAK-8x8-4 N-Channel 1 Channel 40 V 200 A 1.3 mOhms - 20 V, 20 V 1.5 V 260 nC - 55 C + 175 C 150 W Enhancement AEC-Q101 TrenchFET Reel, Cut Tape, MouseReel
Vishay / Siliconix MOSFET N-Ch 60V Vds AEC-Q101 Qualified
Datu lapa
288 536Ir noliktavā
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Min.: 1
Vair.: 1
Rullis: 3 000

Si SMD/SMT PowerPAK-SO-8-4 N-Channel 1 Channel 60 V 15 A 25.9 mOhms - 20 V, 20 V 3 V 7.6 nC - 55 C + 175 C 45 W Enhancement AEC-Q101 Reel, Cut Tape, MouseReel
Vishay / Siliconix MOSFET 100V Vds +/-20V Vgs AEC-Q101 Qualified
Datu lapa
64 098Ir noliktavā
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Min.: 1
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Rullis: 3 000

Si SMD/SMT PowerPAK-SO-8-4 N-Channel 1 Channel 100 V 14.7 A 78 mOhms - 20 V, 20 V 2.5 V 4 nC - 55 C + 175 C 27 W Enhancement AEC-Q101 Reel, Cut Tape, MouseReel
Vishay Semiconductors MOSFET 40V Vds 160A Id AEC-Q101 Qualified
Datu lapa
13 802Ir noliktavā
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Min.: 1
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Rullis: 2 000

Si SMD/SMT PowerPAK-8x8-4 N-Channel 1 Channel 40 V 160 A 900 uOhms - 20 V, 20 V 1.5 V 220 nC - 55 C + 175 C 136 W Enhancement AEC-Q101 TrenchFET Reel, Cut Tape, MouseReel
Vishay / Siliconix MOSFET N Ch 100Vds 20Vgs AEC-Q101 Qualified
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119 241Ir noliktavā
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Min.: 1
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Rullis: 3 000

Si SMD/SMT PowerPAK-SO-8-4 N-Channel 1 Channel 100 V 27 A 22 mOhms - 20 V, 20 V 2.5 V 20 nC - 55 C + 175 C 45 W Enhancement AEC-Q101 TrenchFET Reel, Cut Tape, MouseReel
Vishay / Siliconix MOSFET N-Chnl 60-V (D-S) AEC-Q101 Qualified
Datu lapa
76 852Ir noliktavā
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Min.: 1
Vair.: 1
Rullis: 3 000

Si SMD/SMT PowerPAK-SO-8-4 N-Channel 1 Channel 60 V 32 A 14 mOhms - 20 V, 20 V 1.5 V 44 nC - 55 C + 175 C 45 W Enhancement AEC-Q101 TrenchFET Reel, Cut Tape, MouseReel

Vishay Semiconductors MOSFET 30V Vds +/-12V Vgs AEC-Q101 Qualified
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202 044Ir noliktavā
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Rullis: 3 000

Si SMD/SMT SOT-363-6 N-Channel 1 Channel 30 V 1.7 A 45 mOhms - 12 V, 12 V 600 mV 5.2 nC - 55 C + 175 C 3.3 W Enhancement AEC-Q101 TrenchFET Reel, Cut Tape, MouseReel
Vishay / Siliconix MOSFET Nch 60V Vds 20V Vgs TO-252
Datu lapa
31 105Ir noliktavā
Min.: 1
Vair.: 1

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 60 V 100 A 3.9 mOhms - 20 V, 20 V 2.5 V 90 nC - 55 C + 175 C 107 W Enhancement TrenchFET
Vishay / Siliconix MOSFET 40V Vds 60A Id AEC-Q101 Qualified
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60 176Ir noliktavā
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Min.: 1
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Rullis: 3 000

Si SMD/SMT PowerPAK-SO-8-4 N-Channel 1 Channel 40 V 60 A 5 mOhms - 20 V, 20 V 1.5 V 55 nC - 55 C + 175 C 48 W Enhancement AEC-Q101 TrenchFET Reel, Cut Tape, MouseReel
Vishay Semiconductors MOSFET N-Ch 40V Vds AEC-Q101 Qualified
Datu lapa
42 010Ir noliktavā
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Min.: 1
Vair.: 1
Rullis: 3 000

Si SMD/SMT PowerPAK-SO-8-4 N-Channel 1 Channel 40 V 60 A 2.6 mOhms - 20 V, 20 V 1.5 V 80 nC - 55 C + 175 C 68 W Enhancement AEC-Q101 TrenchFET Reel, Cut Tape, MouseReel
Vishay Semiconductors MOSFET N Ch 80Vds 20Vgs AEC-Q101 Qualified
Datu lapa
4 265Ir noliktavā
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Min.: 1
Vair.: 1
Rullis: 2 000

Si SMD/SMT PowerPAK-8x8-4 N-Channel 1 Channel 80 V 150 A 2.4 mOhms - 20 V, 20 V 2.5 V 144 nC - 55 C + 175 C 136 W Enhancement AEC-Q101 TrenchFET Reel, Cut Tape, MouseReel
Vishay Semiconductors MOSFET 80V Vds PowerPAK AEC-Q101 Qualified
Datu lapa
9 560Ir noliktavā
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Min.: 1
Vair.: 1
Rullis: 3 000

Si SMD/SMT PowerPAK-1212-8 N-Channel 1 Channel 80 V 18 A 21 mOhms - 20 V, 20 V 2 V 17 nC - 55 C + 175 C 62.5 W Enhancement AEC-Q101 TrenchFET Reel, Cut Tape, MouseReel
Vishay / Siliconix MOSFET 40V 200A 375 AEC-Q101 Qualified
Datu lapa
2 323Ir noliktavā
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Min.: 1
Vair.: 1
Rullis: 800

Si SMD/SMT TO-263-7 N-Channel 1 Channel 40 V 200 A 1.2 mOhms - 20 V, 20 V 1.5 V 291 nC - 55 C + 175 C 375 W Enhancement AEC-Q101 TrenchFET Reel, Cut Tape, MouseReel

Vishay / Siliconix MOSFET N Ch 30Vds 20Vgs AEC-Q101 Qualified
Datu lapa
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3 039Ir noliktavā
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Min.: 1
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Rullis: 2 500

Si SMD/SMT SOIC-8 N-Channel 1 Channel 30 V 32 A 3.1 mOhms - 20 V, 20 V 1.5 V 110 nC - 55 C + 175 C 7.1 W Enhancement AEC-Q101 TrenchFET Reel, Cut Tape, MouseReel
Vishay / Siliconix MOSFET 40V Vds -/+20V Vgs AEC-Q101 Qualified
Datu lapa
25 133Ir noliktavā
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Min.: 1
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Rullis: 3 000

Si SMD/SMT PowerPAK-SO-8-4 N-Channel 1 Channel 40 V 30 A 8.2 mOhms - 20 V, 20 V 1.5 V 41 nC - 55 C + 175 C 45 W Enhancement AEC-Q101 PowerPAK Reel, Cut Tape, MouseReel
Vishay / Siliconix MOSFET N Ch 60Vds 20Vgs AEC-Q101 Qualified
Datu lapa
3 352Ir noliktavā
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Min.: 1
Vair.: 1
Rullis: 3 000

Si SMD/SMT PowerPAK-SO-8-4 N-Channel 1 Channel 60 V 64 A 7.2 mOhms - 20 V, 20 V 1.5 V 106 nC - 55 C + 175 C 83 W Enhancement AEC-Q101 TrenchFET Reel, Cut Tape, MouseReel
Vishay / Siliconix MOSFET 60V Vds 120A Id AEC-Q101 Qualified
Datu lapa
1 473Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 800

Si SMD/SMT TO-263-7 N-Channel 1 Channel 60 V 120 A 2 mOhms - 20 V, 20 V 3 V 123 nC - 55 C + 175 C 375 W Enhancement AEC-Q101 TrenchFET Reel, Cut Tape
Vishay Semiconductors MOSFET 60V 25A 62W AEC-Q101 Qualified
Datu lapa
6 731Ir noliktavā
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Min.: 1
Vair.: 1
Rullis: 2 500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 60 V 25 A 18 mOhms - 20 V, 20 V 1.5 V 50 nC - 55 C + 175 C 62 W Enhancement AEC-Q101 TrenchFET Reel, Cut Tape, MouseReel
Vishay / Siliconix MOSFET N Ch 100Vds 20Vgs AEC-Q101 Qualified
Datu lapa
14 637Ir noliktavā
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Min.: 1
Vair.: 1
Rullis: 3 000

Si SMD/SMT PowerPAK-SO-8-4 N-Channel 1 Channel 100 V 23 A 30 mOhms - 20 V, 20 V 1.5 V 20 nC - 55 C + 175 C 45 W Enhancement AEC-Q101 TrenchFET Reel, Cut Tape, MouseReel
Vishay Semiconductors MOSFET 60V Vds -/+20V Vgs AEC-Q101 Qualified
Datu lapa
30 584Ir noliktavā
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Min.: 1
Vair.: 1
Rullis: 3 000

Si SMD/SMT PowerPAK-1212-8W-8 N-Channel 1 Channel 60 V 8 A 36 mOhms - 20 V, 20 V 2 V 13 nC - 55 C + 175 C 39 W Enhancement AEC-Q101 Reel, Cut Tape, MouseReel

Vishay / Siliconix MOSFET N Ch 60Vds 20Vgs AEC-Q101 Qualified
Datu lapa
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14 102Ir noliktavā
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Min.: 1
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Rullis: 2 500

Si SMD/SMT SOIC-8 N-Channel 1 Channel 60 V 12 A 16.5 mOhms - 20 V, 20 V 2.5 V 29 nC - 55 C + 175 C 6.8 W Enhancement AEC-Q101 TrenchFET Reel, Cut Tape, MouseReel
Vishay Semiconductors MOSFET N-Chnl 300-V (D-S) AEC-Q101 Qualified
Datu lapa
1 430Ir noliktavā
Min.: 1
Vair.: 1

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 300 V 35 A 78 mOhms - 20 V, 20 V 2.5 V 130 nC - 55 C + 175 C 375 W Enhancement AEC-Q101 TrenchFET
Vishay / Siliconix MOSFET N Ch 40Vds 20Vgs AEC-Q101 Qualified
Datu lapa
1 166Ir noliktavā
Min.: 1
Vair.: 1
Rullis: 800

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 40 V 120 A 1.21 mOhms - 20 V, 20 V 1.5 V 230 nC - 55 C + 175 C 375 W Enhancement AEC-Q101 TrenchFET Reel, Cut Tape

Vishay / Siliconix MOSFET N Ch 40Vds 20Vgs AEC-Q101 Qualified
Datu lapa
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4 177Ir noliktavā
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Min.: 1
Vair.: 1
Rullis: 2 500

Si SMD/SMT SOIC-8 N-Channel 1 Channel 40 V 19 A 6.3 mOhms - 20 V, 20 V 2.5 V 34 nC - 55 C + 175 C 6 W Enhancement AEC-Q101 TrenchFET Reel, Cut Tape, MouseReel
Vishay / Siliconix MOSFET N Ch 300Vds 30Vgs AEC-Q101 Qualified
Datu lapa
12 038Ir noliktavā
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Min.: 1
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Rullis: 2 000

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 300 V 10 A 275 mOhms - 30 V, 30 V 3.4 V 47 nC - 55 C + 175 C 107 W Enhancement AEC-Q101 TrenchFET Reel, Cut Tape, MouseReel